Locating privileged spreaders on an Online Social Network

Social media have provided plentiful evidence of their capacity for information diffusion. Fads and rumors, but also social unrest and riots travel fast and affect large fractions of the population participating in online social networks (OSNs). This has spurred much research regarding the mechanisms that underlie social contagion, and also who (if any) can unleash system-wide information dissemination. Access to real data, both regarding topology --the network of friendships-- and dynamics --the actual way in which OSNs users interact--, is crucial to decipher how the former facilitates the latter's success, understood as efficiency in information spreading. With the quantitative analysis that stems from complex network theory, we discuss who (and why) has privileged spreading capabilities when it comes to information diffusion. This is done considering the evolution of an episode of political protest which took place in Spain, spanning one month in 2011.Comment: 7 pages, 4 figure

The properties of the clumpy torus and BLR in the polar-scattered Seyfert 1 galaxy ESO 323-G77 through X-ray absorption variability

We report results from multi-epoch X-ray observations of the polar-scattered Seyfert 1 galaxy ESO 323-G77. The source exhibits remarkable spectral variability from months to years timescales. The observed spectral variability is entirely due to variations of the column density of a neutral absorber towards the intrinsic nuclear continuum. The column density is generally Compton-thin ranging from a few times 10$^{22}$ cm$^{-2}$ to a few times 10$^{23}$ cm$^{-2}$. However, one observation reveals a Compton-thick state with column density of the order of 1.5 $\times$ 10$^{24}$ cm$^{-2}$. The observed variability offers a rare opportunity to study the properties of the X-ray absorber(s) in an active galaxy. We identify variable X-ray absorption from two different components, namely (i) a clumpy torus whose individual clumps have a density of $\leq$ 1.7 $\times$ 10$^8$ cm$^{-3}$ and an average column density of $\sim$ 4 $\times$ 10$^{22}$ cm$^{-2}$, and (ii) the broad line region (BLR), comprising individual clouds with density of 0.1-8 $\times$ 10$^9$ cm$^{-3}$ and column density of 10$^{23}$-10$^{24}$ cm$^{-2}$. The derived properties of the clumpy torus can also be used to estimate the torus half-opening angle, which is of the order of 47 $^\circ$. We also confirm the previously reported detection of two highly ionized warm absorbers with outflow velocities of 1000-4000 km s$^{-1}$. The observed outflow velocities are consistent with the Keplerian/escape velocity at the BLR. Hence, the warm absorbers may be tentatively identified with the warm/hot inter-cloud medium which ensures that the BLR clouds are in pressure equilibrium with their surroundings. The BLR line-emitting clouds may well be the cold, dense clumps of this outflow, whose warm/hot phase is likely more homogeneous, as suggested by the lack of strong variability of the warm absorber(s) properties during our monitoring.Comment: 15 pages, 4 tables, and 9 figures. Accepted for publication in MNRA

Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing

The electrical properties of HfO2-based metal-insulator- semiconductor capacitors have been systematically investigated by means of I-V and C-V characteristics, admittance spectroscopy, deep level transient spectroscopy, conductance transient, and flat band voltage transient techniques. Attention is also given to the study of the temperature dependence of the leakage current. HfO2 films were grown on p-type silicon substrates by atomic layer deposition using hafnium tetrakis(dimethylamide) as hafnium precursor, and ozone or water as oxygen precursors. The growth temperature ranged from 150 to 350 °C. Low growth temperatures prevent decomposition and high growth rate, as well as high contamination levels. As a result, the leakage current is lower for lower deposition temperatures. Some of the deposited samples were submitted to a postdeposition annealing at 650 °C in N2 atmosphere, showing a decrease in the leakage current and an increase in the equivalent oxide thickness (EOT), whereas interfacial state density increases and defect density inside the dielectric bulk decreases. Regarding dielectric reliability, in our experimental conditions, HfO 2 layers grown at 150 °C exhibit the largest EOT and breakdown voltage. The electrical behaviour is clearly linked with structural properties, and especially with the formation of an interfacial layer between the HfO 2 layer and the silicon substrate, as well as with the presence of several impurities. © 2013 American Vacuum Society.Peer Reviewe

Emergence of influential spreaders in modified rumor models

The burst in the use of online social networks over the last decade has provided evidence that current rumor spreading models miss some fundamental ingredients in order to reproduce how information is disseminated. In particular, recent literature has revealed that these models fail to reproduce the fact that some nodes in a network have an influential role when it comes to spread a piece of information. In this work, we introduce two mechanisms with the aim of filling the gap between theoretical and experimental results. The first model introduces the assumption that spreaders are not always active whereas the second model considers the possibility that an ignorant is not interested in spreading the rumor. In both cases, results from numerical simulations show a higher adhesion to real data than classical rumor spreading models. Our results shed some light on the mechanisms underlying the spreading of information and ideas in large social systems and pave the way for more realistic diffusion models.Comment: 14 Pages, 6 figures, accepted for publication in Journal of Statistical Physic

Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications

In the attempt to form an intermediate band in the bandgap of silicon substrates to give it the capability to absorb infrared radiation, we studied the deep levels in supersaturated silicon with titanium. The technique used to characterize the energy levels was the thermal admittance spectroscopy. Our experimental results showed that in samples with titanium concentration just under Mott limit there was a relationship among the activation energy value and the capture cross section value. This relationship obeys to the well known Meyer-Neldel rule, which typically appears in processes involving multiple excitations, like carrier capture/emission in deep levels, and it is generally observed in disordered systems. The obtained characteristic Meyer-Neldel parameters were Tmn = 176 K and kTmn = 15 meV. The energy value could be associated to the typical energy of the phonons in the substrate. The almost perfect adjust of all experimental data to the same straight line provides further evidence of the validity of the Meyer Neldel rule, and may contribute to obtain a deeper insight on the ultimate meaning of this phenomenon. (C) 2015 AIP Publishing LLC

The topology of a discussion: the #occupy case

We analyse a large sample of the Twitter activity developed around the social movement 'Occupy Wall Street' to study the complex interactions between the human communication activity and the semantic content of a discussion. We use a network approach based on the analysis of the bipartite graph @Users-#Hashtags and of its projections: the 'semantic network', whose nodes are hashtags, and the 'users interest network', whose nodes are users In the first instance, we find out that discussion topics (#hashtags) present a high heterogeneity, with the distinct role of the communication hubs where most the 'opinion traffic' passes through. In the second case, the self-organization process of users activity leads to the emergence of two classes of communicators: the 'professionals' and the 'amateurs'. Moreover the network presents a strong community structure, based on the differentiation of the semantic topics, and a high level of structural robustness when a certain set of topics are censored and/or accounts are removed. Analysing the characteristics the @Users-#Hashtags network we can distinguish three phases of the discussion about the movement. Each phase corresponds to specific moment of the movement: from declaration of intent, organisation and development and the final phase of political reactions. Each phase is characterised by the presence of specific #hashtags in the discussion. Keywords: Twitter, Network analysisComment: 13 pages, 9 figure

Experimental verification of intermediate band formation on titanium-implanted silicon

Intermediate band formation on silicon layers for solar cell applications was achieved by titanium implantation and laser annealing. A two-layer heterogeneous system, formed by the implanted layer and by the un-implanted substrate, was formed. In this work, we present for the first time electrical characterization results which show that recombination is suppressed when the Ti concentration is high enough to overcome the Mott limit, in agreement with the intermediate band theory. Clear differences have been observed between samples implanted with doses under or over the Mott limit. Samples implanted under the Mott limit have capacitance values much lower than the un-implanted ones as corresponds to a highly doped semiconductor Schottky junction. However, when the Mott limit is surpassed, the samples have much higher capacitance, revealing that the intermediate band is formed. The capacitance increasing is due to the big amount of charge trapped at the intermediate band, even at low temperatures. Ti deep levels have been measured by admittance spectroscopy. These deep levels are located at energies which vary from 0.20 to 0.28?eV below the conduction band for implantation doses in the range 1013-1014 at./cm2. For doses over the Mott limit, the implanted atoms become nonrecombinant. Capacitance voltage transient technique measurements prove that the fabricated devices consist of two-layers, in which the implanted layer and the substrate behave as an n+/n junction

On the Fate of Protests: Dynamics of Social Activation and Topic Selection Online and in the Streets

This chapter studies individual and network conditions for the emergence of large social protests in an agent-based model. We use two recent examples from Iran and Germany to inform the modeling process. In our agent-based model, people, who are interconnected in networks, interact and exchange their concerns on a finite number of topics. They may start to protest either because of their concern or because the fraction of protesters in their social contacts exceeds their protest threshold. In contrast to many other models of social protest, we also study the coevolution of topics of concern in the not (yet) protesting public. Given that often a small number of citizens starts a protest, its fate depends not only on the dynamics of social activation but also on the buildup of concern with respect to competing topics. Nowadays, this buildup happens decentralized through social media. The model reproduces characteristic patterns of the evolution of the two empirical cases of social protests in Iran and Germany. In particular, our results show that positions of agents with certain concern levels on certain topics within the networks are important for the fate of protests

Local variation of hashtag spike trains and popularity in Twitter

We draw a parallel between hashtag time series and neuron spike trains. In each case, the process presents complex dynamic patterns including temporal correlations, burstiness, and all other types of nonstationarity. We propose the adoption of the so-called local variation in order to uncover salient dynamics, while properly detrending for the time-dependent features of a signal. The methodology is tested on both real and randomized hashtag spike trains, and identifies that popular hashtags present regular and so less bursty behavior, suggesting its potential use for predicting online popularity in social media.Comment: 7 pages, 7 figure

Does \u2018bigger\u2019mean \u2018better\u2019? Pitfalls and shortcuts associated with big data for social research

\u2018Big data is here to stay.\u2019 This key statement has a double value: is an assumption as well as the reason why a theoretical reflection is needed. Furthermore, Big data is something that is gaining visibility and success in social sciences even, overcoming the division between humanities and computer sciences. In this contribution some considerations on the presence and the certain persistence of Big data as a socio-technical assemblage will be outlined. Therefore, the intriguing opportunities for social research linked to such interaction between practices and technological development will be developed. However, despite a promissory rhetoric, fostered by several scholars since the birth of Big data as a labelled concept, some risks are just around the corner. The claims for the methodological power of bigger and bigger datasets, as well as increasing speed in analysis and data collection, are creating a real hype in social research. Peculiar attention is needed in order to avoid some pitfalls. These risks will be analysed for what concerns the validity of the research results \u2018obtained through Big data. After a pars distruens, this contribution will conclude with a pars construens; assuming the previous critiques, a mixed methods research design approach will be described as a general proposal with the objective of stimulating a debate on the integration of Big data in complex research projecting