An investigation into the application of Claims Analysis to evaluate usability of a digital library interface

There is a need for tools that help developers evaluate the usability of digital library interfaces. The potential for using Claims Analysis to help developers in this way has been investigated in three linked case studies. The first explored the design rationale of an existing design with its developers. This showed that they had considered positive consequences for novice uses but that they found it difficult to identify negative effects. The second study explored the detailed design of an add-on feature. A scenario and sample claims were introduced to evaluate exploratory use within an action cycle of planning, execution and evaluation. This framework provided an effective stimulus to enable the developers to evaluate the design and explore opportunities for redesign. Finally, some novice users explored the digital library and the findings from this were used to validate a user scenario and claims

UV Exposed Optical Fibers with Frequency Domain Reflectometry for Device Tracking in Intra-Arterial Procedures

Shape tracking of medical devices using strain sensing properties in optical fibers has seen increased attention in recent years. In this paper, we propose a novel guidance system for intra-arterial procedures using a distributed strain sensing device based on optical frequency domain reflectometry (OFDR) to track the shape of a catheter. Tracking enhancement is provided by exposing a fiber triplet to a focused ultraviolet beam, producing high scattering properties. Contrary to typical quasi-distributed strain sensors, we propose a truly distributed strain sensing approach, which allows to reconstruct a fiber triplet in real-time. A 3D roadmap of the hepatic anatomy integrated with a 4D MR imaging sequence allows to navigate the catheter within the pre-interventional anatomy, and map the blood flow velocities in the arterial tree. We employed Riemannian anisotropic heat kernels to map the sensed data to the pre-interventional model. Experiments in synthetic phantoms and an in vivo model are presented. Results show that the tracking accuracy is suitable for interventional tracking applications, with a mean 3D shape reconstruction errors of 1.6 +/- 0.3 mm. This study demonstrates the promising potential of MR-compatible UV-exposed OFDR optical fibers for non-ionizing device guidance in intra-arterial procedures

Theoretical Aspects of Particle Production

These lectures describe some of the latest data on particle production in high-energy collisions and compare them with theoretical calculations and models based on QCD. The main topics covered are: fragmentation functions and factorization, small-x fragmentation, hadronization models, differences between quark and gluon fragmentation, current and target fragmentation in deep inelastic scattering, and heavy quark fragmentation.Comment: 26 pages, 27 figures. Lectures at International Summer School on Particle Production Spanning MeV and TeV Energies, Nijmegen, The Netherlands, August 199

Heavy quark flavour dependence of multiparticle production in QCD jets

After inserting the heavy quark mass dependence into QCD partonic evolution equations, we determine the mean charged hadron multiplicity and second multiplicity correlators of jets produced in high energy collisions. We thereby extend the so-called dead cone effect to the phenomenology of multiparticle production in QCD jets and find that the average multiplicity of heavy-quark initiated jets decreases significantly as compared to the massless case, even taking into account the weak decay products of the leading primary quark. We emphasize the relevance of our study as a complementary check of $b$-tagging techniques at hadron colliders like the Tevatron and the LHC.Comment: Version revised, accepted for publication in JHEP, 21 pages and 7 figure

The inversion of anelastic coefficient, source parameters and site respond using genetic algorithm

2002-2003 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Electrical conduction in annealed semi-insulating InP

Variable-temperature current-voltage has been used to study the conduction properties of Fe-doped semi-insulating (SI) InP in the as-grown and annealed states. It is found that the trap-filling (TF) process disappears gradually with lengthening of annealing time. This phenomenon is explained by the decrease of the concentration of the empty Fe deep level (Fe 3+) that is caused by the thermally induced donor defect formation. The TF process cannot be observed in annealed undoped and long-time annealed Fe-doped SI InP material. The breakdown field of annealed undoped and Fe-doped SI InP is much lower than that of as-grown Fe-doped InP material. The breakdown field decreases with decreasing of temperature indicating an impact ionization process. This breakdown behavior is also in agreement with the fact that the concentration of the empty deep level in annealed InP is lowered. © 2000 American Institute of Physics.published_or_final_versio

DX-like properties of the EL6 defect family in GaAs

Capacitance-voltage characterization at different temperatures and emission and capture deep-level transient spectroscopy carried out on undoped n-type GaAs lend strong confirmation to the recent suggestion that the EL6 defect arises from a center that is DX-like in nature. The evidence comes from the observation of an anomalous filling pulse duration dependence of the peak intensities of three to four different EL6 sublevels, similar to that recently found for the DX center in Al xGa 1-xAs and attributed to the charge redistribution. In addition, capture transients reveal large capture barriers (0.2-0.3 eV), which are typical of a defect undergoing large lattice relaxation into a deep-lying state. These observations indicate that the EL6 defect center comprises of a center with three to four slightly different ground-state configurations, each one of which forms as a result of some bond-breaking atomic displacement on capture of a second electron at the defect site. The significance of this in understanding the microstructure for the EL6 center is briefly discussed.published_or_final_versio