A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications

SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Finally, we review the last developments in two areas of interest for the applications of BaTiO3 films on silicon, namely integrated photonics, which benefits from the large Pockels effect of BaTiO3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric. © 2015 National Institute for Materials Science161711sciescopu

Atomic-layer deposited thulium oxide as a passivation layer on germanium

A comprehensive study of atomic-layer deposited thulium oxide (Tm2O3) on germanium has been conducted using x-ray photoelectron spectroscopy (XPS), vacuum ultra-violet variable angle spectroscopic ellipsometry, high-resolution transmission electron microscopy (HRTEM), and electron energy-loss spectroscopy. The valence band offset is found to be 3.05 ± 0.2 eV for Tm2O3/p-Ge from the Tm 4d centroid and Ge 3p3/2 charge-corrected XPS core-level spectra taken at different sputtering times of a single bulk thulium oxide sample. A negligible downward band bending of ∼0.12 eV is observed during progressive differential charging of Tm 4d peaks. The optical band gap is estimated from the absorption edge and found to be 5.77 eV with an apparent Urbach tail signifying band gap tailing at ∼5.3 eV. The latter has been correlated to HRTEM and electron diffraction results corroborating the polycrystalline nature of the Tm2O3 films. The Tm2O3/Ge interface is found to be rather atomically abrupt with sub-nanometer thickness. In addition, the band line-up of reference GeO2/n-Ge stacks obtained by thermal oxidation has been discussed and derived. The observed low reactivity of thulium oxide on germanium as well as the high effective barriers for holes (∼3 eV) and electrons (∼2 eV) identify Tm2O3 as a strong contender for interfacial layer engineering in future generations of scaled high-κ gate stacks on Ge

Atomic characterization of Si nanoclusters embedded in SiO2 by atom probe tomography

Silicon nanoclusters are of prime interest for new generation of optoelectronic and microelectronics components. Physical properties (light emission, carrier storage...) of systems using such nanoclusters are strongly dependent on nanostructural characteristics. These characteristics (size, composition, distribution, and interface nature) are until now obtained using conventional high-resolution analytic methods, such as high-resolution transmission electron microscopy, EFTEM, or EELS. In this article, a complementary technique, the atom probe tomography, was used for studying a multilayer (ML) system containing silicon clusters. Such a technique and its analysis give information on the structure at the atomic level and allow obtaining complementary information with respect to other techniques. A description of the different steps for such analysis: sample preparation, atom probe analysis, and data treatment are detailed. An atomic scale description of the Si nanoclusters/SiO2 ML will be fully described. This system is composed of 3.8-nm-thick SiO layers and 4-nm-thick SiO2 layers annealed 1 h at 900°C

Kinetic Processes in the CVD of SiC from CH3SiCl3-H2 in a Vertical Hot-Wall Reactor

The chemical vapour deposition of SiC-based ceramics from the CH3SiCl3-H2 precursor is investigated on the basis of large scale experimental and theoretical approaches. The use of a vetirtical cylindrical hot-wall LPCVD reactor permits to get a wide isothemal reaction zone with a creeping laminar flow around the substrate and a largely chemical control of the kinetics, which favours a high supersaturation and a nucleation regime. A calculation of the coverage of C (111) or Si(111) planes of SiC points out the importance of the chemisorption of SiCl3 and H radicals on C atoms and of CH3 and Cl radicals on Si atoms. On the basis of kinetic experiments and of chemical and structural investigations of the deposits, several domains of conditions are defined with different rnechanisms for the formation of SiC-based ceramics. For low temperatures and low pressures, a regime of growth of stoichiometric SiC microcrystals occurs from reaction of CH3 and SiCl3 intermediates. Higher pressures in the chemical control knetic domain, favour a regime of nucleation of nanocrystals with an excess of silicon resulting from SiCl3/SiCl2 silicon precursor

HREM Characterization of Interfaces in Thin MOCVD Superconducting Films

This paper is concerned with high-Tc, superconducting compounds produced by metal-organic chemical vapour deposition. The nanostructure of different types of interfaces - yttria stabilized zirconia buffer / (1-102)-sapphire substrate, YBa2Cu3O7-x film / Y2O3 precipitates as well as YBa2Cu3O7-x film / (001)-NdGaO3, -SrTiO3, and -MgO substrates - has been investigated by high resolution electron microscopy. The orientation relationships and the corresponding layer sequences across the interfaces have been determined with the aid of computer simulations

Low pressure chemical vapor deposition of silicon oxynitride films using tetraethylorthosilicate, dichlorosilane and ammonia mixtures

This work describes the thermodynamic simulation and the experimental investigation of the chemical vapor deposition of silicon oxide and silicon oxynitride films starting from tetra-ethyl-orthosilicate (TEOS), dichlorosilane (DCS) and ammonia mixtures. The simulation reveals that the co-deposition of silicon oxynitride - silicon dioxide films is possible at 710° C and 300 mTorr if the DCS/TEOS ratio is greater than one. If the DCS/TEOS ratio is less than one, the deposited films are exclusively composed of silicon dioxide. These predictions were confirmed in corresponding experiments by using Fourier Transform Infrared spectroscopy (FTIR), X-ray Photoelectron Spectroscopy (XPS), Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy (EELS) for the characterization of the obtained films

Structural and electrical properties of Er-doped HfO2 and of its interface with Ge (001)

International audienceEr-doped HfO"2 thin films with Er content ranging from 0% to 15% are deposited by atomic layer deposition on native oxide free Ge(001). The crystallographic phase is investigated by X-ray diffraction and is found to depend on the Er%. The cubic fluorite structure develops on Ge for Er% as low as 4% and is stable after annealing at 400^oC in N"2. Microstrain increases with increasing the Er content within the fluorite structure. Time of flight secondary ion mass and electron energy loss spectroscopy evidence a Ge diffusion from the substrate that results in the formation of a Ge-rich interfacial region which does not present a structural discontinuity with the oxide. The diffusion of Ge is enhanced by the annealing and causes a reordering of the crystal lattice. In annealed films the interface defect density measured by low temperature conductance measurements is found to decrease with decreasing the Er content