2,312 research outputs found

    On weighted structured total least squares

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    In this contribution we extend the result of (Markovsky et. al, SIAM J. of Matrix Anal. and Appl., 2005) to the case of weighted cost function. It is shown that the computational complexity of the proposed algorithm is preserved linear in the sample size when the weight matrix is banded with bandwidth that is independent of the sample size

    Circular photon drag effect in bulk tellurium

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    The circular photon drag effect is observed in a bulk semiconductor. The photocurrent caused by a transfer of both translational and angular momenta of light to charge carriers is detected in tellurium in the mid-infrared frequency range. Dependencies of the photocurrent on the light polarization and on the incidence angle agree with the symmetry analysis of the circular photon drag effect. Microscopic models of the effect are developed for both intra- and inter-subband optical absorption in the valence band of tellurium. The shift contribution to the circular photon drag current is calculated. An observed decrease of the circular photon drag current with increase of the photon energy is explained by the theory for inter-subband optical transitions. Theoretical estimates of the circular photon drag current agree with the experimental data.Comment: 8 pages, 4 figure

    Separable states can be used to distribute entanglement

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    We show that no entanglement is necessary to distribute entanglement; that is, two distant particles can be entangled by sending a third particle that is never entangled with the other two. Similarly, two particles can become entangled by continuous interaction with a highly mixed mediating particle that never itself becomes entangled. We also consider analogous properties of completely positive maps, in which the composition of two separable maps can create entanglement.Comment: 4 pages, 2 figures. Slight modification

    Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors

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    A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.Comment: 4 pages and 3 ps figure

    Conductance calculations for quantum wires and interfaces: mode matching and Green functions

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    Landauer's formula relates the conductance of a quantum wire or interface to transmission probabilities. Total transmission probabilities are frequently calculated using Green function techniques and an expression first derived by Caroli. Alternatively, partial transmission probabilities can be calculated from the scattering wave functions that are obtained by matching the wave functions in the scattering region to the Bloch modes of ideal bulk leads. An elegant technique for doing this, formulated originally by Ando, is here generalized to any Hamiltonian that can be represented in tight-binding form. A more compact expression for the transmission matrix elements is derived and it is shown how all the Green function results can be derived from the mode matching technique. We illustrate this for a simple model which can be studied analytically, and for an Fe|vacuum|Fe tunnel junction which we study using first-principles calculations.Comment: 14 pages, 5 figure

    Valley separation in graphene by polarized light

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    We show that the optical excitation of graphene with polarized light leads to the pure valley current where carriers in the valleys counterflow. The current in each valley originates from asymmetry of optical transitions and electron scattering by impurities owing to the warping of electron energy spectrum. The valley current has strong polarization dependence, its direction is opposite for normally incident beams of orthogonal linear polarizations. In undoped graphene on a substrate with high susceptibility, electron-electron scattering leads to an additional contribution to the valley current that can dominate.Comment: 4+ pages, 2 figure

    Off-diagonal disorder in the Anderson model of localization

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    We examine the localization properties of the Anderson Hamiltonian with additional off-diagonal disorder using the transfer-matrix method and finite-size scaling. We compute the localization lengths and study the metal-insulator transition (MIT) as a function of diagonal disorder, as well as its energy dependence. Furthermore we investigate the different influence of odd and even system sizes on the localization properties in quasi one-dimensional systems. Applying the finite-size scaling approach in conjunction with a nonlinear fitting procedure yields the critical parameters of the MIT. In three dimensions, we find that the resulting critical exponent of the localization length agrees with the exponent for the Anderson model with pure diagonal disorder.Comment: 12 pages including 4 EPS figures, accepted for publication in phys. stat. sol. (b

    UCN Upscattering rates in a molecular deuterium crystal

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    A calculation of ultra-cold neutron (UCN) upscattering rates in molecular deuterium solids has been carried out, taking into account intra-molecular exictations and phonons. The different moelcular species ortho-D2 (with even rotational quantum number J) and para-D2 (with odd J) exhibit significantly different UCN-phonon annihilation cross-sections. Para- to ortho-D2 conversion, furthermore, couples UCN to an energy bath of excited rotational states without mediating phonons. This anomalous upscattering mechanism restricts the UCN lifetime to 4.6 msec in a normal-D2 solid with 33% para content.Comment: 3 pages, one figur

    Giant Spin Relaxation Anisotropy in Zinc-Blende Heterostructures

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    Spin relaxation in-plane anisotropy is predicted for heterostructures based on zinc-blende semiconductors. It is shown that it manifests itself especially brightly if the two spin relaxation mechanisms (D'yakonov-Perel' and Rashba) are comparable in efficiency. It is demonstrated that for the quantum well grown along the [0 0 1] direction, the main axes of spin relaxation rate tensor are [1 1 0] and [1 -1 0].Comment: 3 pages, NO figure

    Weak localization of holes in high-mobility heterostructures

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    Theory of weak localization is developed for two-dimensional holes in semiconductor heterostructures. Ballistic regime of weak localization where the backscattering occurs from few impurities is studied with account for anisotropic momentum scattering of holes. The transition from weak localization to anti-localization is demonstrated for long dephasing times. For stronger dephasing the conductivity correction is negative at all hole densities due to non-monotonous dependence of the spin relaxation time on the hole wavevector. The anomalous temperature dependent correction to the conductivity is calculated. We show that the temperature dependence of the conductivity is non-monotonous at moderate hole densities.Comment: 5 pages, 4 figure
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