Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors

Abstract

A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.Comment: 4 pages and 3 ps figure