Parametric study of manned life support systems. Volume 1 - Summary Final report, Jul. 1967 - Aug. 1968

Summary data on methodology, mission and vehicle criteria for parametric study of manned life support system

Process improvement in BAe Systems and the wider aerospace sector

Purpose: To research the change management processes used to implement ‘world class’ improvements in a major aerospace company, BAE SYSTEMS, and to propose a model for process improvement in the wider aerospace sector. Design/methodology/approach: The research was undertaken as a longitudinal study over a period of five years. A variety of research methodologies were used at various stages of the research including action research and observation. Semi-structured and unstructured interviews were used to gather qualitative data along with documentary evidence of the processes being used. Findings: There are three key findings. Firstly, an understanding of the production stages in the aerospace sector: future project; new product; sustain and return to work. Secondly details of a matrix-based approach and the issues regarding its implementation in a large organisation are discussed. Thirdly, a generic set of principles to aid process improvement in the aerospace sector is proposed. Research limitations/implications: Given that the study is based in one company, there are issues regarding the generalisation of the results. A potential further research project would entail the implementation of the proposed generic principles in another aerospace organisation. Practical implications: For BAE SYSTEMS, this research project aided their understanding of the issues involved in rolling out a process improvement program in a large organisation.Originality/value: Until recently, most of the research into process improvement had either been universalistic or aimed at another type of industry, such as the automotive industry. This research helps to address the specific needs of the aerospace industry

RF analysis methodology for Si and SiGe FETs based on transient Monte Carlo simulation

A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained Si:SiGe MOSFETs is presented. It is based on transient ensemble Monte Carlo simulation which correctly describes device transport, and employs a finite element solver to account for complex device geometries. Transfer characteristics and figures of merit for a number of existing and proposed RF MOSFETs are discussed

A CCD search for distant satellites of asteroids 3 Juno and 146 Lucina

The results of CCD searches for satellites of asteroids 146 Lucina and 3 Juno are reported. Juno is one of the largest asteroids (D = 244 km); no previous deep imaging search for satellites around it has been reported. A potential occultation detection of a small satellite orbiting 146 Lucina (D = 137 km) km was reported by Arlot et al. (1985), but has not been confirmed. Using the 2.1 m reflector at McDonald Observatory in 1990 and 1991 with a CCD camera equipped with a 2.7 arc-sec radius occulting disk, limiting magnitudes of m(sub R) = 19.5 and m(sub R) = 21.4 were achieved around these two asteroids. This corresponds to objects of 1.6 km radius at Juno's albedo and distance, and 0.6 km radius at Lucina's albedo and distance. No satellite detections were made. Unless satellites were located behind our occultation mask, these two asteroids do not have satellites larger than the radii given above

Monte Carlo investigation of optimal device architectures for SiGe FETs

Strained silicon channel FETs grown on virtual SiGe substrates show clear potential for RF applications, in a material system compatible with silicon VLSI. However, the optimisation of practical RF devices requires some care. 0.1-0.12 μm gate length designs are investigated using Monte Carlo techniques. Although structures based on III-V experience show fT values of up to 94 GHz, more realistic designs are shown to be limited by parallel conduction and ill constrained effective channel lengths. Aggressively scaled SiGe devices, following state-of-the-art CMOS technologies, show fT values of up to 80 GHz

Strain engineered In_xGa_1-xAs channel pHEMTs on virtual substrates: a simulation study

The impact of In<sub>x</sub>Al<sub>1-x</sub>As strain control buffers on the performance of low In content InGaAs channel pseudomorphic high electron mobility transistor p(HEMT) is investigated. It is shown that relaxed and tensile strained channel devices outperform the conventional compressively strained channel devices. It is argued that strain engineering in GaAs based devices makes it possible to realise RF characteristics comparable to InP based pHEMTs while obtaining improved breakdown characteristics

RF performance of strained Si MODFETs and MOSFETs on "virtual" SiGe substrates: A Monte Carlo study

No abstract avaliable

New broad 8Be nuclear resonances

Energies, total and partial widths, and reduced width amplitudes of 8Be resonances up to an excitation energy of 26 MeV are extracted from a coupled channel analysis of experimental data. The presence of an extremely broad J^pi = 2^+ ``intruder'' resonance is confirmed, while a new 1^+ and very broad 4^+ resonance are discovered. A previously known 22 MeV 2^+ resonance is likely resolved into two resonances. The experimental J^pi T = 3^(+)? resonance at 22 MeV is determined to be 3^-0, and the experimental 1^-? (at 19 MeV) and 4^-? resonances to be isospin 0.Comment: 16 pages, LaTe