187 research outputs found

    Low saturation fluence in a semiconductor saturable electroabsorber mirror operated in a self-biased regime

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    A semiconductor saturable absorber mirror utilizing the electroabsorption effect on a self-biased stack of extremely shallow quantum wells is proposed and analyzed theoretically and numerically. The saturation flux and recovery time of the proposed device when operated with picosecond incident pulses are shown to compare very favorably with existing all-optical constructions. (C) 2008 American Institute of Physics

    Theory of direct and indirect effect of two-photon absorption on nonlinear optical losses in high power semiconductor lasers

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    The effect of the transverse laser structure on two-photon absorption (TPA) related effects in high-power diode lasers is analysed theoretically. The direct effect of TPA is found to depend significantly on the transverse waveguide structure, and predicted to be weaker in broad and asymmetric waveguide designs. The indirect effect of TPA, via carrier generation in the waveguide and free-carrier absorption, is analysed for the case of a symmetric laser waveguide and shown to be strongly dependent on the active layer position. With the active layer near the mode peak, the indirect effect is weaker than the direct effect due to the population of TPA-created carriers being efficiently depleted by their diffusion and capture into the active layer, whereas for the active layer position strongly shifted towards the p-cladding, the indirect effect can become the dominant power limitation at very high currents. It is shown that for optimizing a laser design for pulsed high power operation, both TPA related effects and the inhomogeneous carrier accumulation in the waveguide caused by diffusive current need to be taken into account

    Strongly Localized State of a Photon at the Intersection of the Phase Slips in 2D Photonic Crystal with Low Contrast of Dielectric Constant

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    Two-dimensional photonic crystal with a rectangular symmetry and low contrast (< 1) of the dielectric constant is considered. We demonstrate that, despite the {\em absence} of a bandgap, strong localization of a photon can be achieved for certain ``magic'' geometries of a unit cell by introducing two π/2\pi/2 phase slips along the major axes. Long-living photon mode is bound to the intersection of the phase slips. We calculate analytically the lifetime of this mode for the simplest geometry -- a square lattice of cylinders of a radius, rr. We find the magic radius, rcr_c, of a cylinder to be 43.10 percent of the lattice constant. For this value of rr, the quality factor of the bound mode exceeds 10610^6. Small (1\sim 1%) deviation of rr from rcr_c results in a drastic damping of the bound mode.Comment: 6 pages, 2 figure

    Ultrafast harmonic mode-locking of monolithic compound-cavity laser diodes incorporating photonic-bandgap reflectors

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    We present the first demonstration of reproducible harmonic mode-locked operation from a novel design of monolithic semiconductor laser comprising a compound cavity formed by a 1-D photonic-bandgap (PBG) mirror. Mode-locking (ML) is achieved at a harmonic of the fundamental round-trip frequency with pulse repetition rates from 131 GHz up to a record high frequency of 2.1 THz. The devices are fabricated from GaAs-Al-GaAs material emitting at a wavelength of 860 nm and incorporate two gain sections with an etched PBG reflector between them, and a saturable absorber section. Autocorrelation studies are reported which allow the device behavior for different ML frequencies, compound cavity ratios, and type and number of intra-cavity reflectors to be analyzed. The highly reflective PBG microstructures are shown to be essential for subharmonic-free ML operation of the high-frequency devices. We have also demonstrated that the single PBG reflector can be replaced by two separate features with lower optical loss. These lasers may find applications in terahertz; imaging, medicine, ultrafast optical links, and atmospheric sensing

    Slower-than-normal syntactic processing in agrammatic Broca's aphasia: Evidence from Dutch

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    Studies of agrammatic Broca's aphasia reveal a diverging pattern of performance in the comprehension of reflexive elements: offline, performance seems unimpaired, whereas online—and in contrast to both matching controls and Wernicke's patients—no antecedent reactivation is observed at the reflexive. Here we propose that this difference characterizes the agrammatic comprehension deficit as a result of slower-than-normal syntactic structure formation. To test this characterization, the comprehension of three Dutch agrammatic patients and matching control participants was investigated utilizing the cross-modal lexical decision (CMLD) interference task. Two types of reflexive-antecedent dependencies were tested, which have already been shown to exert distinct processing demands on the comprehension system as a function of the level at which the dependency was formed. Our hypothesis predicts that if the agrammatic system has a processing limitation such that syntactic structure is built in a protracted manner, this limitation will be reflected in delayed interpretation. Confirming previous findings, the Dutch patients show an effect of distinct processing demands for the two types of reflexive-antecedent dependencies but with a temporal delay. We argue that this delayed syntactic structure formation is the result of limited processing capacity that specifically affects the syntactic system

    Fast But Not Furious. When Sped Up Bit Rate of Information Drives Rule Induction

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    The language abilities of young and adult learners range from memorizing specific items to finding statistical regularities between them (item-bound generalization) and generalizing rules to novel instances (category-based generalization). Both external factors, such as input variability, and internal factors, such as cognitive limitations, have been shown to drive these abilities. However, the exact dynamics between these factors and circumstances under which rule induction emerges remain largely underspecified. Here, we extend our information-theoretic model (Radulescu et al., 2019), based on Shannon’s noisy-channel coding theory, which adds into the “formula” for rule induction the crucial dimension of time: the rate of encoding information by a time-sensitive mechanism. The goal of this study is to test the channel capacity-based hypothesis of our model: if the input entropy per second is higher than the maximum rate of information transmission (bits/second), which is determined by the channel capacity, the encoding method moves gradually from item-bound generalization to a more efficient category-based generalization, so as to avoid exceeding the channel capacity. We ran two artificial grammar experiments with adults, in which we sped up the bit rate of information transmission, crucially not by an arbitrary amount but by a factor calculated using the channel capacity formula on previous data. We found that increased bit rate of information transmission in a repetition-based XXY grammar drove the tendency of learners toward category-based generalization, as predicted by our model. Conversely, we found that increased bit rate of information transmission in complex non-adjacent dependency aXb grammar impeded the item-bound generalization of the specific a_b frames, and led to poorer learning, at least judging by our accuracy assessment method. This finding could show that, since increasing the bit rate of information precipitates a change from item-bound to category-based generalization, it impedes the item-bound generalization of the specific a_b frames, and that it facilitates category-based generalization both for the intervening Xs and possibly for a/b categories. Thus, sped up bit rate does not mean that an unrestrainedly increasing bit rate drives rule induction in any context, or grammar. Rather, it is the specific dynamics between the input entropy and the maximum rate of information transmission

    Enhancement of the Curie temperature in GaMnAs/InGaMnAs superlattices

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    We report on an enhancement of the Curie temperature in GaMnAs/InGaMnAs superlattices grown by low-temperature molecular beam epitaxy, which is due to thin InGaMnAs or InGaAs films embedded into the GaMnAs layers. The pronounced increase of the Curie temperature is strongly correlated to the In concentration in the embedded layers. Curie temperatures up to 110 K are observed in such structures compared to 60 K in GaMnAs single layers grown under the same conditions. A further increase in TC_C up to 130 K can be achieved using post-growth annealing at temperatures near the growth temperature. Pronounced thickness fringes in the high resolution X-ray diffraction spectra indicate good crystalline quality and sharp interfaces in the structures.Comment: 4 pages, 4 figures, submitted to Appl. Phys. Let

    Threshold and power of pulsed red‐emitting diode lasers with a bulk active layer near p‐cladding under high‐temperature operation

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    Threshold properties and pulsed output of AlGaInP visible-emitting lasers with an asymmetric waveguide structure and a bulk active layer are analysed. The efects of the current leakage, increased by the heating of the laser due to the proximity of the electrical pulse source and the Joule heating in and around this source are analysed. When optimising the laser design, waveguiding properties of the bulk active layer are shown to be important, leading to threshold currents decreasing, and injection efciency increasing, with active layer thickness in lasers with moderately thick (<0.1 μm) active layers
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