4 research outputs found
Stability of the platinum electrode during high temperature annealing
The modifications of the structure, electrical resistivity and surface morphology of platinum thin films on Pt/Ti/Si and Pt/TiO2/boron-phosphor-silicate glass/Si structures resulted from high-temperature annealing in the presence of oxygen were studied. It was established that regardless of the sublayers used while annealing caused platinum to recrystallize and texturize in the direction [111], and the texture is suppressed in the directions [200] and [220]. The annealing caused the drop of the volume resistivity of thin films from 0.2 to ca. 0.15 ΞΌOhmΓm, and practically shown no dependence on the film thickness in case it exceeded 200 nm.
As a result of recrystallization Pt films became unsmooth at low annealing temperatures and as the temperature increased hillocks were formed on the film surface. Relaxation of the compressive stress in the Pt film, facilitating the reduction of its free energy and modification of the lattice parameter towards the equilibrium value, is known to be the major hillock formation mechanism. The level of intrinsic stress in the film and the annealing temperature both determine the initial hillock formation. The final hillock height, density, and size are related to the Pt layer thickness, sublayer structure, and to the annealing time and temperature. Optimization of the sublayer structure and annealing modes makes it possible to increase the annealing temperature to ca. 780Β°Π‘ without causing any substantial damages to Pt microrelief. That enables us to use these structures as the bottom electrode in ferroelectric memory cells
Π hase composition and structure of multilayer nanosized metal-carbon coatings
ΠΠ΅ΡΠΎΠ΄Π°ΠΌΠΈ ΠΠ ΡΠΏΠ΅ΠΊΡΡΠΎΡΠΊΠΎΠΏΠΈΠΈ ΠΈ Π°ΡΠΎΠΌΠ½ΠΎ-ΡΠΈΠ»ΠΎΠ²ΠΎΠΉ ΠΌΠΈΠΊΡΠΎΡΠΊΠΎΠΏΠΈΠΈ ΠΎΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΎ Π²Π»ΠΈΡΠ½ΠΈΠ΅ ΠΏΠΎΠ΄ΡΠ»ΠΎΠ΅Π² ΡΠ°Π·Π»ΠΈΡΠ½ΠΎΠΉ ΠΏΡΠΈΡΠΎΠ΄Ρ Π½Π° ΡΠ°Π·ΠΎΠ²ΡΠΉ ΡΠΎΡΡΠ°Π² ΠΈ ΠΌΠΎΡΡΠΎΠ»ΠΎΠ³ΠΈΡ ΠΎΠ΄Π½ΠΎΠΊΠΎΠΌΠΏΠΎΠ½Π΅Π½ΡΠ½ΡΡ
ΠΈ ΠΊΠΎΠΌΠΏΠΎΠ·ΠΈΡΠΈΠΎΠ½Π½ΡΡ
ΡΠ³Π»Π΅ΡΠΎΠ΄Π½ΡΡ
ΠΏΠΎΠΊΡΡΡΠΈΠΉ. ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ ΠΏΡΠΈ ΠΎΡΠ°ΠΆΠ΄Π΅Π½ΠΈΠΈ Π»Π΅Π³ΠΈΡΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ ΡΠΈΡΠ°Π½ΠΎΠΌ ΡΠ³Π»Π΅ΡΠΎΠ΄Π½ΠΎΠ³ΠΎ ΠΏΠΎΠΊΡΡΡΠΈΡ Π½Π° ΠΏΠΎΠ΄ΡΠ»ΠΎΠ΅ ΡΠΈΡΠ°Π½Π° ΠΎΠ±ΡΠ°Π·ΡΡΡΡΡ Π±ΠΎΠ»Π΅Π΅ Π΄ΠΈΡΠΏΠ΅ΡΡΠ½ΡΠ΅ Π‘sp
2
ΠΊΠ»Π°ΡΡΠ΅ΡΡ. ΠΡΠΈ
ΡΡΠΎΠΌ Π»Π΅Π³ΠΈΡΠΎΠ²Π°Π½Π½ΡΠ΅ ΡΠ³Π»Π΅ΡΠΎΠ΄Π½ΡΠ΅ ΠΏΠΎΠΊΡΡΡΠΈΡ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΠ·ΡΡΡΡΡ ΠΌΠ΅Π½ΡΡΠΈΠΌΠΈ ΡΠ΅ΡΠΎΡ
ΠΎΠ²Π°ΡΠΎΡΡΡΡ ΠΈ ΡΠ°Π·ΠΌΠ΅ΡΠΎΠΌ Π·Π΅ΡΠ½Π°.The influence of sublayers of various nature on the phase composition and morphology of one-component and composite carbon coatings is determined by the methods of Raman spectroscopyand atomic force microscopy. It is shown that when depositing titanium-doped carbon coating on a titanium sublayer, more dispersed Csp 2 clusters are formed. At the same time, doped
carbon coatings are characterized by lower roughness and grain size