4 research outputs found

    Stability of the platinum electrode during high temperature annealing

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    The modifications of the structure, electrical resistivity and surface morphology of platinum thin films on Pt/Ti/Si and Pt/TiO2/boron-phosphor-silicate glass/Si structures resulted from high-temperature annealing in the presence of oxygen were studied. It was established that regardless of the sublayers used while annealing caused platinum to recrystallize and texturize in the direction [111], and the texture is suppressed in the directions [200] and [220]. The annealing caused the drop of the volume resistivity of thin films from 0.2 to ca. 0.15 ΞΌOhmΓ—m, and practically shown no dependence on the film thickness in case it exceeded 200 nm. As a result of recrystallization Pt films became unsmooth at low annealing temperatures and as the temperature increased hillocks were formed on the film surface. Relaxation of the compressive stress in the Pt film, facilitating the reduction of its free energy and modification of the lattice parameter towards the equilibrium value, is known to be the major hillock formation mechanism. The level of intrinsic stress in the film and the annealing temperature both determine the initial hillock formation. The final hillock height, density, and size are related to the Pt layer thickness, sublayer structure, and to the annealing time and temperature. Optimization of the sublayer structure and annealing modes makes it possible to increase the annealing temperature to ca. 780Β°Π‘ without causing any substantial damages to Pt microrelief. That enables us to use these structures as the bottom electrode in ferroelectric memory cells

    Π hase composition and structure of multilayer nanosized metal-carbon coatings

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    ΠœΠ΅Ρ‚ΠΎΠ΄Π°ΠΌΠΈ КР спСктроскопии ΠΈ Π°Ρ‚ΠΎΠΌΠ½ΠΎ-силовой микроскопии ΠΎΠΏΡ€Π΅Π΄Π΅Π»Π΅Π½ΠΎ влияниС подслоСв Ρ€Π°Π·Π»ΠΈΡ‡Π½ΠΎΠΉ ΠΏΡ€ΠΈΡ€ΠΎΠ΄Ρ‹ Π½Π° Ρ„Π°Π·ΠΎΠ²Ρ‹ΠΉ состав ΠΈ ΠΌΠΎΡ€Ρ„ΠΎΠ»ΠΎΠ³ΠΈΡŽ ΠΎΠ΄Π½ΠΎΠΊΠΎΠΌΠΏΠΎΠ½Π΅Π½Ρ‚Π½Ρ‹Ρ… ΠΈ ΠΊΠΎΠΌΠΏΠΎΠ·ΠΈΡ†ΠΈΠΎΠ½Π½Ρ‹Ρ… ΡƒΠ³Π»Π΅Ρ€ΠΎΠ΄Π½Ρ‹Ρ… ΠΏΠΎΠΊΡ€Ρ‹Ρ‚ΠΈΠΉ. Показано, Ρ‡Ρ‚ΠΎ ΠΏΡ€ΠΈ осаТдСнии Π»Π΅Π³ΠΈΡ€ΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ Ρ‚ΠΈΡ‚Π°Π½ΠΎΠΌ ΡƒΠ³Π»Π΅Ρ€ΠΎΠ΄Π½ΠΎΠ³ΠΎ покрытия Π½Π° подслоС Ρ‚ΠΈΡ‚Π°Π½Π° ΠΎΠ±Ρ€Π°Π·ΡƒΡŽΡ‚ΡΡ Π±ΠΎΠ»Π΅Π΅ диспСрсныС Π‘sp 2 кластСры. ΠŸΡ€ΠΈ этом Π»Π΅Π³ΠΈΡ€ΠΎΠ²Π°Π½Π½Ρ‹Π΅ ΡƒΠ³Π»Π΅Ρ€ΠΎΠ΄Π½Ρ‹Π΅ покрытия Ρ…Π°Ρ€Π°ΠΊΡ‚Π΅Ρ€ΠΈΠ·ΡƒΡŽΡ‚ΡΡ мСньшими ΡˆΠ΅Ρ€ΠΎΡ…ΠΎΠ²Π°Ρ‚ΠΎΡΡ‚ΡŒΡŽ ΠΈ Ρ€Π°Π·ΠΌΠ΅Ρ€ΠΎΠΌ Π·Π΅Ρ€Π½Π°.The influence of sublayers of various nature on the phase composition and morphology of one-component and composite carbon coatings is determined by the methods of Raman spectroscopyand atomic force microscopy. It is shown that when depositing titanium-doped carbon coating on a titanium sublayer, more dispersed Csp 2 clusters are formed. At the same time, doped carbon coatings are characterized by lower roughness and grain size
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