Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

An apparatus is disclosed which includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a dc magnetron sputtering system. A gas inlet introduces various gases to the vacuum chamber and creates various gas plasma during the sputtering steps. The rotating turntables insure that the respective wafers are present under the sputtering guns for an average amount of time such that consistency in sputtering and deposition is achieved. By continuous and sequential processing of the wafers in a common vacuum chamber without removal, the adverse affects of exposure to atmospheric conditions are eliminated providing higher quality circuit contacts and functional device

Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

The processing of wafer devices to form multilevel interconnects for microelectronic circuits is described. The method is directed to performing the sequential steps of etching the via, removing the photo resist pattern, back sputtering the entire wafer surface and depositing the next layer of interconnect material under common vacuum conditions without exposure to atmospheric conditions. Apparatus for performing the method includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a DC magnetron sputtering system. A gas inlet is provided in the chamber for the introduction of various gases to the vacuum chamber and the creation of various gas plasma during the sputtering steps

Method of construction of a multi-cell solar array

The method of constructing a high voltage, low power, multicell solar array is described. A solar cell base region is formed in a substrate such as but not limited to silicon or sapphire. A protective coating is applied on the base and a patterned etching of the coating and base forms discrete base regions. A semiconductive junction and upper active region are formed in each base region, and defined by photolithography. Thus, discrete cells which are interconnected by metallic electrodes are formed

Multilevel metallization method for fabricating a metal oxide semiconductor device

An improved method is described of constructing a metal oxide semiconductor device having multiple layers of metal deposited by dc magnetron sputtering at low dc voltages and low substrate temperatures. The method provides multilevel interconnections and cross over between individual circuit elements in integrated circuits without significantly reducing the reliability or seriously affecting the yield

High and low threshold P-channel metal oxide semiconductor process and description of microelectronics facility

The fabrication techniques and detail procedures for creating P-channel Metal-Oxide-Semiconductor (P-MOS) integrated circuits at George C. Marshall Space Flight Center (MSFC) are described. Examples of P-MOS integrated circuits fabricated at MSFC together with functional descriptions of each are given. Typical electrical characteristics of high and low threshold P-MOS discrete devices under given conditions are provided. A general description of MSFC design, mask making, packaging, and testing procedures is included. The capabilities described in this report are being utilized in: (1) research and development of new technology, (2) education of individuals in the various disciplines and technologies of the field of microelectronics, and (3) fabrication of many types of specially designed integrated circuits which are not commercially feasible in small quantities for in-house research and development programs

Elimination of Coffee-Ring Formation by Humidity Cycling: A Numerical Study.

Periodically switching between evaporation and condensation, or "humidity cycling", has potential for controlling the film shape that results from volatile droplets containing a nonvolatile material. It does not require adaptation of material properties nor the introduction of an external field to achieve a change in film shape. It was shown experimentally by Doi and coworkers [Kajiya et al. Langmuir 2010, 26, pp 10429-10432] that ring-shaped deposits can be removed through careful selection of the atmospheric conditions. We present a model, based on lubrication theory, that can predict the final film shape resulting from the humidity cycling process. We confirm that the refluidization of gelled regions during condensation and the subsequent inward flow is the mechanism responsible for the improved profiles. Furthermore, we find that an increase in the time spent condensing to that spent evaporating results in flatter films and that an optimal humidity cycling frequency exists.This is the author accepted manuscript. The final version is available from ACS via http://dx.doi.org/10.1021/acs.langmuir.5b0382

Electrophoretic Analysis of the Proteins of Body Fluids in Various Disease States

Plasma, serum, and body fluid specimens (pleural fluid, ascitic fluid, synovial fluid, edema fluid, hydrocele fluid, cyst fluid, lymph, bile, and subdural fluid) from patients with heart disease, carcinoma, liver disease, and arthritis, were subjected to electrophoretic analysis. A decrease in plasma albumin and an increase in globulin components occurred in the disease conditions. In most instances the albumin and gamma globulin were higher, the α1 globulin the same, and the α2 and β globulin and fibrinogen in lower concentration in the fluid than in the corresponding plasma specimen. The distribution of the protein components between the plasma and fluid is explained on the basis of their molecular weights

Electrophoretic Studies of the Proteins of Plasma and Ascitic Fluid in Cirrhosis

A series of plasma and ascitic fluid specimens withdrawn from patients with cirrhosis, and a series from one patient over a seven-week period prior to his death, were subjected to electrophoretic analysis. The results indicate a qualitative similarity between plasma and ascitic fluid protein patterns. In most instances, the ascitic fluid contained more albumin, alpha1 and gamma globulins than the plasma, whereas the plasma was richer in alpha2 and beta globulins and fibrinogen. Based on the molecular weights of the protein fractions, the values indicate that selective protein enrichment of ascitic fluid may be related to the molecular size of the protein components

The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook

The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included