Standoff Detection of Solid Traces by Single-Beam Nonlinear Raman Spectroscopy Using Shaped Femtosecond Pulses

We demonstrate a single-beam, standoff (>10m) coherent anti-Stokes Raman scattering spectroscopy (CARS) of various materials, including trace amounts of explosives and nitrate samples, under ambient light conditions. The multiplex measurement of characteristic molecular vibrations with <20cm-1 spectral resolution is carried out using a single broadband (>550cm-1) phase-shaped femtosecond laser pulse. We exploit the strong nonresonant background signal for amplification of the weak backscattered resonant CARS signal by using a homodyne detection scheme. This facilitates a simple, highly sensitive single-beam spectroscopic technique, with a potential for hazardous materials standoff detection applications

Ultrasensitive hydrogen detection by electrostatically formed silicon nanowire decorated by palladium nanoparticles

Developing high performance hydrogen (H_{2}) sensors is of utmost importance to facilitate the safe usage of H_{2} as the alternative source of clean and renewable energy. We present an ultra-sensitive H_{2} sensor operating in air and based on electrostatically formed nanowire (EFN) sensor decorated by palladium nanoparticles (Pd NPs). By appropriate tuning of the various gate voltages of the EFN, an extremely high sensor response of ∼2 × 10^{6} % (0.8 % H_{2} exposure) and a sensitivity of ∼400 % ppm^{−1} is obtained at room temperature (20 ± 2 °C). This sensor outperforms, to the best of our knowledge, most of the reported resistive and field effect transistor (FET) based H^{2} sensors. The EFN power consumption varies from few pW to ∼436 nW at maximum current operation thus enabling ultra-low power usage at room temperature. In addition, the sensor exhibits fast response and recovery times, retains good sensing performances even at 50 % relative humidity (RH) and exhibits reproducibility over time. Combining Pd NPs with the unique features of the EFN platform makes Pd-EFN a versatile, robust, low power, rapid, and highly sensitive H_{2} sensor

Multiple State Electrostatically Formed Nanowire Transistors

This is the author accepted manuscript. The final version is available from IEEE via the DOI in this record.Electrostatically Formed Nanowire (EFN) based transistors have been suggested in the past as gas sensing devices. These transistors are multiple gate transistors in which the source to drain conduction path is determined by the bias applied to the back gate, and two junction gates. If a specific bias is applied to the side gates, the conduction band electrons between them are confined to a well-defined area forming a narrow channel- the Electrostatically Formed Nanowire. Recent work has shown that by applying non-symmetric bias on the side gates, the lateral position of the EFN can be controlled. We propose a novel Multiple State EFN Transistor (MSET) that utilizes this degree of freedom for the implementation of complete multiplexer functionality in a single transistor like device. The multiplexer functionality allows a very simple implementation of binary and multiple valued logic functions

Tuning the graphene work function by electric field effect

We report variation of the work function for single and bi-layer graphene devices measured by scanning Kelvin probe microscopy (SKPM). Using the electric field effect, the work function of graphene can be adjusted as the gate voltage tunes the Fermi level across the charge neutrality point. Upon biasing the device, the surface potential map obtained by SKPM provides a reliable way to measure the contact resistance of individual electrodes contacting graphene.Comment: 11 pages and 8 figures including supplementary information, to appear in Nano Letter

Enhanced electric conductivity at ferroelectric vortex cores in BiFeO3

In many large ensembles, the property of the system as a whole cannot be understood from studying the individual entities alone ¿ these ensembles can be made up by neurons in the brain, transport users in traffic networks or data packages in the Internet. The past decade has seen important progress in our fundamental understanding of what such seemingly disparate 'complex systems' have in common; some of these advances are surveyed here

Carrier thermalization dynamics in single zincblende and wurtzite InP nanowires

Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band-to-band transition theory is developed to extract the electron-hole–plasma density and temperature as a function of time from TRS measurements of single nanowires, which have complex valence band structures. We find that the thermalization dynamics of hot carriers depends strongly on material (GaAs NW vs InP NW) and less strongly on crystal structure (ZB vs WZ). The thermalization dynamics of ZB and WZ InP NWs are similar. But a comparison of the thermalization dynamics in ZB and WZ InP NWs with ZB GaAs NWs reveals more than an order of magnitude slower relaxation for the InP NWs. We interpret these results as reflecting their distinctive phonon band structures that lead to different hot phonon effects. Knowledge of hot carrier thermalization dynamics is an essential component for effective incorporation of nanowire materials into electronic devices

Tunable hot-carrier photodetection beyond the bandgap spectral limit

The spectral response of common optoelectronic photodetectors is restricted by a cutoff wavelength limit λ that is related to the activation energy (or bandgap) of the semiconductor structure (or material) (Δ) through the relationship λ = hc/Δ. This spectral rule dominates device design and intrinsically limits the long-wavelength response of a semiconductor photodetector. Here, we report a new, long-wavelength photodetection principle based on a hot-cold hole energy transfer mechanism that overcomes this spectral limit. Hot carriers injected into a semiconductor structure interact with cold carriers and excite them to higher energy states. This enables a very long-wavelength infrared response. In our experiments, we observe a response up to 55 μm, which is tunable by varying the degree of hot-hole injection, for a GaAs/AlGaAs sample with Δ = 0.32 eV (equivalent to 3.9 μm in wavelength)

Manipulation of the follicular phase: Uterodomes and pregnancy - is there a correlation?

BACKGROUND: Manipulation of the follicular phase uterine epithelium in women undergoing infertility treatment, has not generally shown differing morphological effects on uterine epithelial characteristics using Scanning Electron Microscopy (SEM) and resultant pregnancy rates have remained suboptimal utilising these manipulations. The present study observed manipulation of the proliferative epithelium, with either 7 or 14 days of sequential oestrogen (E) therapy followed by progesterone (P) and assessed the appearance of pinopods (now called uterodomes) for their usefulness as potential implantation markers in seven women who subsequently became pregnant. Three endometrial biopsies per patient were taken during consecutive cycles: day 19 of a natural cycle - (group 1), days 11/12 of a second cycle after 7 days E then P - (group 2), and days 19/22 of a third cycle after 14 days E then P - (group 3). Embryo transfer (ET) was performed in a subsequent long treatment cycle (as per Group 3). RESULTS: Seven pregnancies resulted in seven viable births including one twins and one miscarriage. Analysis of the individual regimes showed 5 days of P treatment to have a higher correlation for uterodomes in all 3 cycles observed individually. It was also observed that all 7 women demonstrated the appearance of uterodomes in at least one of their cycles. CONCLUSIONS: We conclude that manipulation of the follicular phase by shortening the period of E exposure to 7 days, does not compromise uterine epithelial morphology and we add weight to the conclusion that uterodomes indicate a receptive endometrium for implantation

Space Charge at Nanoscale: Probing Injection and Dynamic Phenomena Under Dark/Light Configurations by Using KPFM and C-AFM

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