Pembuatan Peta Zona Nilai Ekonomi Kawasan (Znek) Menggunakan Tcm (Travel Cost Method) Dan Cvm (Contingent Valuation Method) Berbasis Sistem Informasi Geografis (Studi Kasus : Candi Prambanan)

Prambanan Temple has potential as a tourist attraction. The strategic location which have historical value, makes this Place became one tourist destination areas Klaten. Based on this, we need a Zone Map Economic Value Areas (ZNEK) to the Prambanan area of the palace to estimate the economic value and benefits based on willingness to pay (WTP) tourists and the people who benefit from the region. Sampling method (respondents) were used in this research is non probability sampling with accidental sampling technique, where respondents are those who by chance / accidental encountered in the study area and can be used as a sample, if it is considered that the person who happened to be found suitable as a data source. Data processing method used is multiple linear regression analysis and calculation software WTP using Maple 17.Results obtained from the study of this final project is the Economic Value Area Zone maps with the total value of economic attraction Prambanan Temple Rp.32.851.020.029.000,- Maps generated from the integration of economic and spatial aspects can be used as an objective consideration of the decision-making process in the spatial field and economic field for the government to optimize and simplify the process of the asset\u27s management and monitoring the natural resources potential. Besides being able to provide a solution for the management of resource constraints of the economy in various regions in Indonesia, the map can be used too as a learning tool for the public society to bring awareness of the importance of potential belonging

Non-plasmonic nanoantennas for surface enhanced spectroscopies with ultra-low heat conversion

Nanoplasmonics has recently revolutionized our ability to control light on the nanoscale. Using metallic nanostructures with tailored shapes, it is possible to efficiently focus light into nanoscale field 'hot spots'. High field enhancement factors have been achieved in such optical nanoantennas, enabling transformative science in the areas of single molecule interactions, highly enhanced nonlinearities and nanoscale waveguiding. Unfortunately, these large enhancements come at the price of high optical losses due to absorption in the metal, severely limiting real-world applications. Via the realization of a novel nanophotonic platform based on dielectric nanostructures to form efficient nanoantennas with ultra-low light-into-heat conversion, here we demonstrate an approach that overcomes these limitations. We show that dimer-like silicon-based single nanoantennas produce both high surface enhanced fluorescence and surface enhanced Raman scattering, while at the same time generating a negligible temperature increase in their hot spots and surrounding environments

Effect of thermal treatment on the growth, structure and luminescence of nitride-passivated silicon nanoclusters

Silicon nanoclusters (Si-ncs) embedded in silicon nitride films have been studied to determine the effects that deposition and processing parameters have on their growth, luminescent properties, and electronic structure. Luminescence was observed from Si-ncs formed in silicon-rich silicon nitride films with a broad range of compositions and grown using three different types of chemical vapour deposition systems. Photoluminescence (PL) experiments revealed broad, tunable emissions with peaks ranging from the near-infrared across the full visible spectrum. The emission energy was highly dependent on the film composition and changed only slightly with annealing temperature and time, which primarily affected the emission intensity. The PL spectra from films annealed for duration of times ranging from 2 s to 2 h at 600 and 800°C indicated a fast initial formation and growth of nanoclusters in the first few seconds of annealing followed by a slow, but steady growth as annealing time was further increased. X-ray absorption near edge structure at the Si K- and L3,2-edges exhibited composition-dependent phase separation and structural re-ordering of the Si-ncs and silicon nitride host matrix under different post-deposition annealing conditions and generally supported the trends observed in the PL spectra

X-ray diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxides

The formation and subsequent growth of crystalline silicon nanoclusters (Si-ncs) in annealed silicon-rich silicon oxides (SRSOs) were studied by glancing angle x-ray diffraction. SRSO samples with Si concentrations (y) of 0.40, 0.42, and 0.45 were grown by inductively coupled plasma-enhanced chemical-vapor deposition (PECVD). Samples with y=0.42 grown by electron-cyclotron-resonance PECVD were also studied. Annealing treatments were performed at temperatures (T) of 900, 1000, and 1100 °C for times (t) between 0.5 and 3 h in flowing Ar. As-grown SRSO films did not present signs of Si clusters (amorphous or crystalline); however, (111), (220), and (311) Bragg peaks corresponding to c-Si were clearly seen after annealing at 900 °C for the y=0.45 sample, but only barely seen for the y=0.42 and undetected for the y=0.40 samples. For T=1000 °C, all studied SRSO samples clearly showed the c-Si diffraction peaks, which became narrower with increasing t and T. From the width of the Si (111) peaks, the mean size of Si-ncs and their dependence on T and t was determined. Activation energies were deduced from the T dependence by fitting the results to two growth models of Si precipitates in an a-SiO2 matrix reported in the literature. The activation energies qualitatively agree with values deduced from transmission electron microscopy studies of annealed SRSO reported in the literature. However, they are significantly lower than Si diffusion activation energies available in the literature for SiO2 with low excess Si. A broad feature is also observed in the x-ray diffractograms for as-grown samples with low y, which shifts to the peak position corresponding to a-SiO2 with increasing T. This behavior is explained by the formation of a well-defined a-SiO2 phase with increasing T, where mixed Si-O4-nSin (n=1,2,3) tetrahedra in the as-grown alloy are gradually converted into Si-O4 and Si-Si4 as phase separation of Si and SiO2 proceeds. From the measured Si (111) peak positions, small Si-ncs are found to be tensilely strained by as much as ~0.8%. This effect becomes insignificant as Si-ncs become larger with increasing y or T.Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; ArgentinaFil: Zalloum, O. H. Y.. Mc Master University; CanadáFil: Irving, E. A.. Mc Master University; CanadáFil: Wojcik, J.. Mc Master University; CanadáFil: Roschuk, T.. Mc Master University; CanadáFil: Flynn, M. J.. Mc Master University; CanadáFil: Mascher, P.. Mc Master University; Canad

Mechanical tuning of LaAlO<inf>3</inf>/SrTiO<inf>3</inf> interface conductivity

10.1021/acs.nanolett.5b01021Nano Letters1553547-355