21 research outputs found
Ultrasound‐aided rapid and enhanced adsorption of anionic dyes from binary dye matrix onto novel hematite/polyaniline nanocomposite: Response surface methodology optimization
Synthesis and characterization of lead sulfide thin films by coumarin assisted CBD method
Agitation dependent properties of copper indium diselenide thin films prepared by electrochemical route
Development of Superstrate CuInGaSe<sub>2</sub> Thin Film Solar Cells with Low-Cost Electrochemical Route from Nonaqueous Bath
Electrodeposition
of Cu(In,Ga)Se<sub>2</sub> (CIGS) thin film is
an attractive approach for the development of highly efficient low-cost
solar cells. This work focuses on the effects of various electrodeposition
parameters on the growth and properties of CIGS layers. The films
deposited at −0.9 V tend to drive the growth of CIGS favoring
(112) crystal orientation, whereas the films deposited at −1.6
V show the orientation along (220)/(204). Interplanar distances corresponding
to (112) and (204/220) planes could be observed in the high resolution
transmission electron microscopy (HRTEM) images of the respective
films, confirming the dependence of the texture on the deposition
potential. Films with larger grains could be grown by maintaining
higher temperature (130 °C) during the deposition of layers.
X-ray photoelectron spectroscopy (XPS) confirmed the presence of Cu<sup>+</sup>, In<sup>3+</sup>, Ga<sup>3+</sup>, and Se<sup>2–</sup> valence states in the CIGS layers prepared at −0.9 and −1.6
V. The film deposited at −1.6 V with (220/204) orientation
showed high efficiency as compared to the film deposited at −0.9
V with (112) orientation. The observed solar cell parameters, measured
under illuminated condition of input power intensity 100 mW/cm<sup>2</sup>, were <i>V</i><sub>OC</sub> = 0.357 V; <i>J</i><sub>SC</sub> = 27 mA/cm<sup>2</sup>, FF = 44, and η
= 4.90; and <i>V</i><sub>OC</sub> = 0.460 V, <i>J</i><sub>SC</sub> = 34 mA/cm<sup>2</sup>, FF = 58, and η = 9.07
for the deposition potentials of −0.9 and −1.6 V, respectively<sub>.</sub