Recent progress in the development of β-Ga2O3 scintillator crystals grown by the Czochralski method

A high-quality bulk single crystal of β-Ga2O3 has been grown by the Czochralski method and its basic scintillation characteristics (light yield, energy resolution, proportionality, and scintillation decay times) have been investigated. All the samples cut from the crystal show promising scintillation yields between 8400 and 8920 ph/MeV, which is a noticeable step forward compared to previous studies. The remaining parameters, i.e. the energy resolution slightly above 10% (at 662 keV) and the scintillation mean decay time just under 1 μs, are at the same level as we have formerly recognized for β-Ga2O3. The proportionality of yield seems not to deviate from standards determined by other commercial scintillators

Recent Progress in the Development of β-Ga2O3 Scintillator Crystals Grown by the Czochralski Method

A high-quality bulk single crystal of β-Ga2O3 has been grown by the Czochralski method and its basic scintillation characteristics (light yield, energy resolution, proportionality, and scintillation decay times) have been investigated. All the samples cut from the crystal show promising scintillation yields between 8400 and 8920 ph/MeV, which is a noticeable step forward compared to previous studies. The remaining parameters, i.e. the energy resolution slightly above 10% (at 662 keV) and the scintillation mean decay time just under 1 μs, are at the same level as we have formerly recognized for β-Ga2O3. The proportionality of yield seems not to deviate from standards determined by other commercial scintillators

Tailoring the Scintillation Properties of β-Ga2O3 by Doping with Ce and Codoping with Si

Measurements of pulse height spectra and scintillation time profiles performed on Czochralski-grown β-Ga2O3, β-Ga2O3:Ce, and β-Ga2O3:Ce,Si crystals are reported. The highest value of scintillation yield, 7040 ph/MeV, was achieved for pure β-Ga2O3 at a low free electron concentration, nevertheless Ce-doped crystals could also approach high values thereof. Si-codoping, however, decreases the scintillation yield. The presence of Ce, and the more of Ce and Si, in β-Ga2O3 significantly increases the contribution of the fastest components in scintillation time profiles, which makes β-Ga2O3 a very fast scintillator under γ-excitation

Low temperature thermoluminescence of β-Ga2O3 scintillator

Low temperature thermoluminescence of β-Ga2O3, β-Ga2O3:Al and β-Ga2O3:Ce has been investigated. Glow curves have been analyzed quantitatively using a rate equations model in order to determine the traps parameters, such as activation energies, capture cross-sections and probabilities of recombination and retrapping

Heading for brighter and faster β-Ga2O3 scintillator crystals

Czochralski-grown β-Ga2O3 and β-Ga2O3:Si crystals with the free electron concentrations between 2.5·1016 and 4.3·1018 cm−3 have been characterized by means of pulse height and scintillation time profile measurements in order to assess their basic scintillation properties. At room temperature, with increasing free electron concentration in the studied range, the scintillation yields decrease from 8920 to 1930 ph/MeV, while the mean scintillation decay times pare down from 989 to 61 ns. However, when the brightest β-Ga2O3 sample is cooled down below 100 K, its scintillation yield exceeds 20000 ph/MeV

Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals

Truly bulk ZnGa2O4 single crystals were obtained directly from the melt. High melting point of 1900 ± 20 °C and highly incongruent evaporation of the Zn- and Ga-containing species impose restrictions on growth conditions. The obtained crystals are characterized by a stoichiometric or near-stoichiometric composition with a normal spinel structure at room temperature and by a narrow full width at half maximum of the rocking curve of the 400 peak of (100)-oriented samples of 23 arcsec. ZnGa2O4 is a single crystalline spinel phase with the Ga/Zn atomic ratio up to about 2.17. Melt-grown ZnGa2O4 single crystals are thermally stable up to 1100 and 700 °C when subjected to annealing for 10 h in oxidizing and reducing atmospheres, respectively. The obtained ZnGa2O4 single crystals were either electrical insulators or n-type semiconductors/degenerate semiconductors depending on growth conditions and starting material composition. The as-grown semiconducting crystals had the resistivity, free electron concentration, and maximum Hall mobility of 0.002–0.1 Ωcm, 3 × 1018–9 × 1019 cm−3, and 107 cm2 V−1 s−1, respectively. The semiconducting crystals could be switched into the electrically insulating state by annealing in the presence of oxygen at temperatures ≥700 °C for at least several hours. The optical absorption edge is steep and originates at 275 nm, followed by full transparency in the visible and near infrared spectral regions. The optical bandgap gathered from the absorption coefficient is direct with a value of about 4.6 eV, close to that of β-Ga2O3. Additionally, with a lattice constant of a = 8.3336 Å, ZnGa2O4 may serve as a good lattice-matched substrate for magnetic Fe-based spinel films

Photoluminescence Spectroscopy of CdTe/ZnTe Self-Assembled Quantum Dots

We present photoluminescence (PL) measurements of two different, 3 monolayers and 12 monolayers (ml), CdTe self-assembled quantum dot (SAQD) samples. The spectra were recorded in the temperature range 20 K–300 K, with photoexcitation over the ZnTe barrier layer. PL spectra displayed two main emission bands. High-energy PL emission (E1) is ZnTe LO like phonon- (ωLO = 204.2 cm−1 (3 ml), ωLO = 207.3 cm−1 (12 ml)) assisted deexcitation. Dominant low-energy band (E2) presents the direct deexcitation to ground state of the CdTe quantum dots

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

Sn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate. The fin channels have a triangular cross-section and are approximately 300 nm wide and 200 nm tall. FinFETs, with 20 nm Al2O3 gate dielectric and ∼2 μm wrap-gate, demonstrate normally-off operation with a threshold voltage between 0 and +1 V during high-voltage operation. The ION/IOFF ratio is greater than 105 and is mainly limited by high on-resistance that can be significantly improved. At VG = 0, a finFET with 21 μm gate-drain spacing achieved a three-terminal breakdown voltage exceeding 600 V without a field-plate