Effect of electron beam irradiation on structural and optical properties of Cu-doped In2O3 films prepared by RF magnetron sputtering.

Undoped and Cu-doped In2O3 films were prepared by radiofrequency magnetron sputtering technique. The effects of Cu doping and high-energy electron beam irradiation on the structural and optical properties of as-prepared films were investigated using techniques such as x-ray diffraction, x-ray photoelectron spectroscopy (XPS), lateral scanning electron microscopic image analysis, energy-dispersive x-ray (EDX) spectroscopy, micro-Raman, and ultraviolet-visible (UV-vis) spectroscopy. Moderate doping of Cu in In2O3 enhanced the intensity of (222) peak, indicating alignment of crystalline grains along . Electron beam irradiation promoted orientation of crystalline grains along in undoped and moderately Cu-doped films. EDX spectroscopic and XPS analyses revealed incorporation of Cu2+ ions in the lattice. The transmittance of Cu-doped films decreased with e-beam irradiation. Systematic reduction of the bandgap energy with an increase in Cu doping concentration was seen in unirradiated and electron-beam-irradiated films

Effect of tungsten doping on the properties of In2O3 films.

Highly crystalline tungsten oxide (WO3)-doped indium oxide (In2O3) films are synthesized at room temperature by the RF magnetron sputtering technique. The structural and morphological properties of the as-deposited films and the films annealed at a temperature of 300°C are investigated in detail. X-ray diffraction analysis reveals the presence of a cubic bixbyite structure with preferred orientation along the (222) plane for both the as-deposited and annealed films. Moderate WO3 doping (1 wt.%) enhances the crystallinity of the as-deposited In2O3 films, whereas the crystallinity of the films systematically decreases with an increase in WO3 doping concentration beyond 1 wt.%. Raman spectral analysis discloses the modes of the cubic bixbyite In2O3 phase in the films. Atomic force microscopy micrographs show a smooth and dense distribution of smaller grains in the films. X-ray photoelectron spectroscopy reveals the existence of W5+ in the doped films. The undoped film is highly oxygen deficient. Variation in the concentration of oxygen vacancy can be associated with the degree of crystallinity of the films

Effect of silver incorporation on the structural and morphological characteristics of RF sputtered indium oxide films.

Radio frequency (RF) magnetron sputtered silver incorporated indium oxide thin films were prepared and their structural and morphological properties were studied using micro- Raman spectroscopy, Atomic Force Microscopy (AFM), Field Emission Scanning Electron Microscopy (FESEM) and Energy Dispersive Spectroscopy (EDS). Raman modes corresponding to the cubic bixbyite phase of indium oxide were obtained through micro-Raman spectroscopy. AFM images exhibited dense distribution of grains. Elemental analysis using EDS spectra confirmed the presence of indium, silver and oxygen in the prepared films