532 research outputs found
Consistent operator semigroups and their interpolation
Under a mild regularity condition we prove that the generator of the
interpolation of two C0-semigroups is the interpolation of the two generators
H\"older estimates for parabolic operators on domains with rough boundary
We investigate linear parabolic, second-order boundary value problems with
mixed boundary conditions on rough domains. Assuming only boundedness and
ellipticity on the coefficient function and very mild conditions on the
geometry of the domain, including a very weak compatibility condition between
the Dirichlet boundary part and its complement, we prove H\"older continuity of
the solution in space and time.Comment: 1 figur
Optimal Control of the Thermistor Problem in Three Spatial Dimensions
This paper is concerned with the state-constrained optimal control of the
three-dimensional thermistor problem, a fully quasilinear coupled system of a
parabolic and elliptic PDE with mixed boundary conditions. This system models
the heating of a conducting material by means of direct current. Local
existence, uniqueness and continuity for the state system are derived by
employing maximal parabolic regularity in the fundamental theorem of Pr\"uss.
Global solutions are addressed, which includes analysis of the linearized state
system via maximal parabolic regularity, and existence of optimal controls is
shown if the temperature gradient is under control. The adjoint system
involving measures is investigated using a duality argument. These results
allow to derive first-order necessary conditions for the optimal control
problem in form of a qualified optimality system. The theoretical findings are
illustrated by numerical results
The Regulation of Glutaminolysis and Citric Acid Cycle Activity During Mammalian Cell Cultivation
Quantum Monte Carlo study of a positron in an electron gas
Quantum Monte Carlo calculations of the relaxation energy, pair-correlation function, and annihilating-pair momentum density are presented for a positron immersed in a homogeneous electron gas. We find smaller relaxation energies and contact pair-correlation functions in the important low-density regime than predicted by earlier studies. Our annihilating-pair momentum densities have almost zero weight above the Fermi momentum due to the cancellation of electron-electron and electron-positron correlation effects
Reversing a granular flow on a vibratory conveyor
Experimental results are presented on the transport properties of granular
materials on a vibratory conveyor. For circular oscillations of the shaking
trough a non-monotonous dependence of the transport velocity on the normalized
acceleration is observed. Two maxima are separated by a regime, where the
granular flow is much slower and, in a certain driving range, even reverses its
direction. A similar behavior is found for a single solid body with a low
coefficient of restitution, whereas an individual glass bead of 1 mm diameter
is propagated in the same direction for all accelerations.Comment: 4 pages, 5 figures, submitted to Applied Physics Letter
Direct observation of twist mode in electroconvection in I52
I report on the direct observation of a uniform twist mode of the director
field in electroconvection in I52. Recent theoretical work suggests that such a
uniform twist mode of the director field is responsible for a number of
secondary bifurcations in both electroconvection and thermal convection in
nematics. I show here evidence that the proposed mechanisms are consistent with
being the source of the previously reported SO2 state of electroconvection in
I52. The same mechanisms also contribute to a tertiary Hopf bifurcation that I
observe in electroconvection in I52. There are quantitative differences between
the experiment and calculations that only include the twist mode. These
differences suggest that a complete description must include effects described
by the weak-electrolyte model of electroconvection
A Non-Equilibrium Defect-Unbinding Transition: Defect Trajectories and Loop Statistics
In a Ginzburg-Landau model for parametrically driven waves a transition
between a state of ordered and one of disordered spatio-temporal defect chaos
is found. To characterize the two different chaotic states and to get insight
into the break-down of the order, the trajectories of the defects are tracked
in detail. Since the defects are always created and annihilated in pairs the
trajectories form loops in space time. The probability distribution functions
for the size of the loops and the number of defects involved in them undergo a
transition from exponential decay in the ordered regime to a power-law decay in
the disordered regime. These power laws are also found in a simple lattice
model of randomly created defect pairs that diffuse and annihilate upon
collision.Comment: 4 pages 5 figure
Energetics of positron states trapped at vacancies in solids
We report a computational first-principles study of positron trapping at
vacancy defects in metals and semiconductors. The main emphasis is on the
energetics of the trapping process including the interplay between the positron
state and the defect's ionic structure and on the ensuing annihilation
characteristics of the trapped state. For vacancies in covalent semiconductors
the ion relaxation is a crucial part of the positron trapping process enabling
the localization of the positron state. However, positron trapping does not
strongly affect the characteristic features of the electronic structure, e.g.,
the ionization levels change only moderately. Also in the case of metal
vacancies the positron-induced ion relaxation has a noticeable effect on the
calculated positron lifetime and momentum distribution of annihilating
electron-positron pairs.Comment: Submitted to Physical Review B on 17 April 2007. Revised version
submitted on 6 July 200
Vacancy complexes in nonequilibrium germanium-tin semiconductors
Understanding the nature and behavior of vacancy-like defects in epitaxial
GeSn metastable alloys is crucial to elucidate the structural and
optoelectronic properties of these emerging semiconductors. The formation of
vacancies and their complexes is expected to be promoted by the relatively low
substrate temperature required for the epitaxial growth of GeSn layers with Sn
contents significantly above the equilibrium solubility of 1 at.%. These
defects can impact both the microstructure and charge carrier lifetime. Herein,
to identify the vacancy-related complexes and probe their evolution as a
function of Sn content, depth-profiled pulsed low-energy positron annihilation
lifetime spectroscopy and Doppler broadening spectroscopy were combined to
investigate GeSn epitaxial layers with Sn content in the 6.5-13.0 at.% range.
The samples were grown by chemical vapor deposition method at temperatures
between 300 and 330 {\deg}C. Regardless of the Sn content, all GeSn samples
showed the same depth-dependent increase in the positron annihilation line
broadening parameters, which confirmed the presence of open volume defects. The
measured average positron lifetimes were the highest (380-395 ps) in the region
near the surface and monotonically decrease across the analyzed thickness, but
remain above 350 ps. All GeSn layers exhibit lifetimes that are 85 to 110 ps
higher than the Ge reference layers. Surprisingly, these lifetimes were found
to decrease as Sn content increases in GeSn layers. These measurements indicate
that divacancies are the dominant defect in the as-grown GeSn layers. However,
their corresponding lifetime was found to be shorter than in epitaxial Ge thus
suggesting that the presence of Sn may alter the structure of divacancies.
Additionally, GeSn layers were found to also contain a small fraction of
vacancy clusters, which become less important as Sn content increases
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