Influence of misfit strain on the physical properties of Fe thin films

We investigate the growth of thin Fe layers on MgAl2O4 (001) and MgO (001) substrates using dc magnetron sputtering. The crystal quality of Fe layers deposited on MgAl2O4 is found to be substantially higher as compared to Fe grown on MgO substrates. The effects of the crystal quality on the magnetic and electric transport properties are discussed.

Experimental and Theoretical Investigation of the Elastic Properties of HfV2O7

We investigated the elastic properties of the HfV2O7 high-temperature phase, exhibiting negative thermal expansion, in a synergetic strategy of first-principle calculations and nanoindentation experiments performed on sputtered films. Self-consistent results were obtained for the measured elastic modulus (73 +/- 14 GPa) and dispersion-corrected density functional theory calculations. The elastic properties of HfV2O7 are affected by long-range dispersion interaction, which may be induced by severe modification in the second-nearest neighbor O-O bond distance as obtained upon compression. HfV2O7 is composed of HfO6, VO4, and V2O7 building blocks, whereby the latter is characterized by an increasing V-O(-V) bond length upon compression

Epitaxy enhancement in oxide/tungsten heterostructures by harnessing the interface adhesion

The conditions whereby epitaxy is achieved are commonly believed to be mostly governed by misfit strain. We report on a systematic investigation of growth and interface structure of single crystalline tungsten thin films on two different metal oxide substrates, Al2O3 (11 (2) over bar0) and MgO (001). We demonstrate that despite a significant mismatch, enhanced crystal quality is observed for tungsten grown on the sapphire substrates. This is promoted by stronger adhesion and chemical bonding with sapphire compared to magnesium oxide, along with the restructuring of the tungsten layers close to the interface. The latter is supported by ab initio calculations using density functional theory. Finally, we demonstrate the growth of magnetic heterostructures consisting of high-quality tungsten layers in combination with ferromagnetic CoFe layers, which are relevant for spintronic applications

Ab Initio Guided Low Temperature Synthesis Strategy for Smooth Face-Centred Cubic FeMn Thin Films

The sputter deposition of FeMn thin films with thicknesses in the range of hundred nanometres and beyond requires relatively high growth temperatures for the formation of the face-centred cubic (fcc) phase, which results in high thin film roughness. A low temperature synthesis strategy, based on local epitaxial growth of a 100 nm thick fcc FeMn film as well as a Cu nucleation layer on an α-Al2O3 substrate at 160 °C, enables roughness values (Ra) as low as ~0.6 nm, which is in the same order of magnitude as the pristine substrate (~0.1 nm). The synthesis strategy is guided by ab initio calculations, indicating very strong interfacial bonding of the Cu nucleation layer to an α-Al2O3 substrate (work of separation 5.48 J/m²)—which can be understood based on the high Cu coordination at the interface—and between fcc FeMn and Cu (3.45 J/m²). Accompanied by small lattice misfits between these structures, the strong interfacial bonding is proposed to enable the local epitaxial growth of a smooth fcc FeMn thin film. Based on the here introduced synthesis strategy, the implementation of fcc FeMn based thin film model systems for materials with interface dominated properties such as FeMn steels containing κ-carbide precipitates or secondary phases appears meaningful

A Proposal for a Composite with Temperature-Independent Thermophysical Properties : HfV2-HfV2O7

The HfV2-HfV2O7 composite is proposed as a material with potentially temperature-independent thermophysical properties due to the combination of anomalously increasing thermoelastic constants of HfV2 with the negative thermal expansion of HfV2O7. Based on literature data, the coexistence of both a near-zero temperature coefficient of elasticity and a coefficient of thermal expansion is suggested for a composite with a phase fraction of approximately 30 vol.% HfV2 and 70 vol.% HfV2O7. To produce HfV2-HfV2O7 composites, two synthesis pathways were investigated: (1) annealing of sputtered HfV2 films in air to form HfV2O7 oxide on the surface and (2) sputtering of HfV2O7/HfV2 bilayers. The high oxygen mobility in HfV2 is suggested to inhibit the formation of crystalline HfV2-HfV2O7 composites by annealing HfV2 in air due to oxygen-incorporation-induced amorphization of HfV2. Reducing the formation temperature of crystalline HfV2O7 from 550 degrees C, as obtained upon annealing, to 300 degrees C using reactive sputtering enables the synthesis of crystalline bilayered HfV2-HfV2O7