Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions

We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low temperatures in epitaxial magnetic tunnel junctions composed of a ferromagnetic metal (MnAs) and a ferromagnetic semiconductor (GaMnAs) separated by a nonmagnetic semiconductor (AlAs). Analysis of the current-voltage characteristics yields detailed information about the asymmetric tunnel barrier. The low temperature conductance-voltage characteristics show a zero bias anomaly and a V^1/2 dependence of the conductance, indicating a correlation gap in the density of states of GaMnAs. These experiments suggest that MnAs/AlAs heterostructures offer well characterized tunnel junctions for high efficiency spin injection into GaAs.Comment: 14 pages, submitted to Phys. Rev.

Coercive Field and Magnetization Deficit in Ga(1-x)Mn(x)As Epilayers

We have studied the field dependence of the magnetization in epilayers of the diluted magnetic semiconductor Ga(1-x)Mn(x)As for 0.0135 < x < 0.083. Measurements of the low temperature magnetization in fields up to 3 T show a significant deficit in the total moment below that expected for full saturation of all the Mn spins. These results suggest that the spin state of the non-ferromagnetic Mn spins is energetically well separated from the ferromagnetism of the bulk of the spins. We have also studied the coercive field (Hc) as a function of temperature and Mn concentration, finding that Hc decreases with increasing Mn concentration as predicted theoretically.Comment: 15 total pages -- 5 text, 1 table, 4 figues. Accepted for publication in MMM 2002 conference proceedings (APL

Electronic and magnetic properties of GaMnAs: Annealing effects

The effect of short-time and long-time annealing at 250C on the conductivity, hole density, and Curie temperature of GaMnAs single layers and GaMnAs/InGaMnAs heterostructures is studied by in-situ conductivity measurements as well as Raman and SQUID measurements before and after annealing. Whereas the conductivity monotonously increases with increasing annealing time, the hole density and the Curie temperature show a saturation after annealing for 30 minutes. The incorporation of thin InGaMnAs layers drastically enhances the Curie temperature of the GaMnAs layers.Comment: 4 pages, 6 figures, submitted to Physica

Non-Drude Optical Conductivity of (III,Mn)V Ferromagnetic Semiconductors

We present a numerical model study of the zero-temperature infrared optical properties of (III,Mn)V diluted magnetic semiconductors. Our calculations demonstrate the importance of treating disorder and interaction effects simultaneously in modelling these materials. We find that the conductivity has no clear Drude peak, that it has a broadened inter-band peak near 220 meV, and that oscillator weight is shifted to higher frequencies by stronger disorder. These results are in good qualitative agreement with recent thin film absorption measurements. We use our numerical findings to discuss the use of f-sum rules evaluated by integrating optical absorption data for accurate carrier-density estimates.Comment: 7 pages, 3 figure

Saturated Ferromagnetism and Magnetization Deficit in Optimally Annealed (Ga,Mn)As Epilayers

We examine the Mn concentration dependence of the electronic and magnetic properties of optimally annealed Ga1-xMnxAs epilayers for 1.35% < x < 8.3%. The Curie temperature (Tc), conductivity, and exchange energy increase with Mn concentration up to x ~ 0.05, but are almost constant for larger x, with Tc ~ 110 K. The ferromagnetic moment per Mn ion decreases monotonically with increasing x, implying that an increasing fraction of the Mn spins do not participate in the ferromagnetism. By contrast, the derived domain wall thickness, an important parameter for device design, remains surprisingly constant.Comment: 8 pages, 4 figures, submitted for Rapid Communication in Phys Rev

Double jeopardy: the influence of excessive daytime sleepiness and impaired cognition on health‐related quality of life in adults with heart failure

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/106066/1/ejhfhfs054.pd

Predictors of Objectively Measured Medication Nonadherence in Adults With Heart Failure

Background—Medication nonadherence rates are high. The factors predicting nonadherence in heart failure remain unclear. Methods and Results—A sample of 202 adults with heart failure was enrolled from the northeastern United States and followed for 6 months. Specific aims were to describe the types of objectively measured medication adherence (eg, taking, timing, dosing, drug holidays) and to identify contributors to nonadherence 6 months after enrollment. Latent growth mixture modeling was used to identify distinct trajectories of adherence. Indicators of the 5 World Health Organization dimensions of adherence (socioeconomic, condition, therapy, patient, and healthcare system) were tested to identify contributors to nonadherence. Two distinct trajectories were identified and labeled persistent adherence (77.8%) and steep decline (22.3%). Three contributors to the steep decline in adherence were identified. Participants with lapses in attention (adjusted OR, 2.65; P=0.023), those with excessive daytime sleepiness (OR, 2.51; P=0.037), and those with ≥2 medication dosings per day (OR, 2.59; P=0.016) were more likely to have a steep decline in adherence over time than to have persistent adherence. Conclusions—Two distinct patterns of adherence were identified. Three potentially modifiable contributors to nonadherence have been identified

Photoemission studies of Ga1−x_{1-x}Mnx_{x}As: Mn-concentration dependent properties

Using angle-resolved photoemission, we have investigated the development of the electronic structure and the Fermi level pinnning in Ga$_{1-x}$Mn$_{x}$As with Mn concentrations in the range 1--6%. We find that the Mn-induced changes in the valence-band spectra depend strongly on the Mn concentration, suggesting that the interaction between the Mn ions is more complex than assumed in earlier studies. The relative position of the Fermi level is also found to be concentration-dependent. In particular we find that for concentrations around 3.5--5% it is located very close to the valence-band maximum, which is in the range where metallic conductivity has been reported in earlier studies. For concentration outside this range, larger as well as smaller, the Fermi level is found to be pinned at about 0.15 eV higher energy.Comment: REVTeX style; 7 pages, 3 figure

Building capacity without disrupting health services: public health education for Africa through distance learning

The human resources crisis in Africa is especially acute in the public health field. Through distance education, the School of Public Health of the University of the Western Cape, South Africa, has provided access to master's level public health education for health professionals from more than 20 African countries while they remain in post. Since 2000, interest has increased overwhelmingly to a point where four times more applications are received than can be accommodated. This home-grown programme remains sensitive to the needs of the target learners while engaging them in high-quality learning applied in their own work contexts