Quantum Hall Effect in Graphene with Interface-Induced Spin-Orbit Coupling

We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the effective Hamiltonian to the quantum Hall effect (QHE). By analysing the spin-splitting of the quantum Hall states as a function of magnetic field and gate-voltage, we obtain different scaling laws that can be used to characterise the spin-orbit coupling in experiments. Furthermore, we employ a real-space quantum transport approach to calculate the quantum Hall conductivity and investigate the robustness of the QHE to disorder introduced by hydrogen impurities. For that purpose, we combine first-principles calculations and a genetic algorithm strategy to obtain a graphene-only Hamiltonian that models the impurity

Ultrathin films of black phosphorus as suitable platforms for unambiguous observation of the orbital Hall effect

Phosphorene, a monolayer of black phosphorus, is a two-dimensional material that lacks a multivalley structure in the Brillouin zone and has negligible spin-orbit coupling. This makes it a promising candidate for investigating the orbital Hall effect independently of the valley or spin Hall effects. To model phosphorene, we utilized a DFT-derived tight-binding Hamiltonian, which is constructed with the pseudo atomic orbital projection method. For that purpose, we use the PAOFLOW code with a newly implemented internal basis that provides a fairly good description of the phosphorene conduction bands. By employing linear response theory, we show that phosphorene exhibits a sizable orbital Hall effect with strong anisotropy in the orbital Hall conductivity for the out-of-plane orbital angular momentum component. The magnitude and sign of the conductivity depend upon the in-plane direction of the applied electric field. These distinctive features enable the observation of the orbital Hall effect in this material unambiguously. The effects of strain and of a perpendicularly applied electric field on the phosphorene orbital-Hall response are also explored. We show that a supplementary electric field applied perpendicular to the phosphorene layer in its conductive regime gives rise to an induced in-plane orbital magnetization.Comment: 8 pages, 4 figure

Disentangling orbital and valley Hall effects in bilayers of transition metal dichalcogenides

It has been recently shown that monolayers of transition metal dichalcogenides (TMDs) in the 2H structural phase exhibit relatively large orbital Hall conductivity plateaus within their energy band gaps, where their spin Hall conductivities vanish. However, since the valley Hall effect (VHE) in these systems also generates a transverse flow of orbital angular momentum it becomes experimentally challenging to distinguish between the two effects in these materials. The VHE requires inversion symmetry breaking to occur, which takes place in the TMD monolayers, but not in the bilayers. We show that a bilayer of 2H-MoS$_2$ is an orbital Hall insulator that exhibits a sizeable OHE in the absence of both spin and valley Hall effects. This phase can be characterised by an orbital Chern number that assumes the value $\mathcal{C}_{L}=2$ for the 2H-MoS$_2$ bilayer and $\mathcal{C}_{L}=1$ for the monolayer, confirming the topological nature of these orbital-Hall insulator systems. Our results are based on density functional theory (DFT) and low-energy effective model calculations and strongly suggest that bilayers of TMDs are highly suitable platforms for direct observation of the orbital Hall insulating phase in two-dimensional materials. Implications of our findings for attempts to observe the VHE in TMD bilayers are also discussed.Comment: 7 pages, 4 figures + Supplementary materia

Orbital magnetoelectric effect in zigzag nanoribbons of p-band systems

Profiles of the spin and orbital angular momentum accumulations induced by a longitudinally applied electric field are explored in nanoribbons of $p$-band systems with a honeycomb lattice. We show that nanoribbons with zigzag borders can exhibit orbital magnetoelectric effects. More specifically, we have found that purely orbital magnetization oriented perpendicularly to the ribbon may be induced in these systems by means of the external electric field, when sublattice symmetry is broken. The effect is rather general and may occur in other multi-orbital materials.Comment: 10 pages, 4 figure

Clone Embrapa 51: uma alternativa para resistênica à resinose-do-cajueiro.

São apresentados os resultados de cinco anos de monitoramento de clones comerciais de cajueiro, quanto à reação de resinose.bitstream/CNPAT/10571/1/cot_130.pd

Orbital magnetoelectric effect in nanoribbons of transition metal dichalcogenides

The orbital magnetoelectric effect (OME) generically refers to the appearance of an orbital magnetization induced by an applied electric field. Here, we show that nanoribbons of transition metal dichalcogenides (TMDs) with zigzag (ZZ) edges may exhibit a sizeable OME activated by an electric field applied along the ribbons' axis. We examine nanoribbons extracted from a monolayer (1L) and a bilayer (2L) of MoS$_2$ in the trigonal (H) structural phase. Transverse profiles of the induced orbital angular momentum accumulations are calculated to first order in the longitudinally applied electric field. Our results show that close to the nanoribbon's edge-state crossings energy, the orbital angular momentum accumulations take place mainly around the ribbons' edges. They have two contributions: one arising from the orbital Hall effect (OHE) and the other consists in the OME. The former is transversely anti-symmetric with respect to the principal axis of the nanoribbon, whereas the latter is symmetric, and hence responsible for the resultant orbital magnetization induced in the system. We found that the orbital accumulation originating from the OHE for the 1L-nanoribbon is approximately half that of a 2L-nanoribbon. Furthermore, while the OME can reach fairly high values in 1L-TMD nanoribbons, it vanishes in the 2L ones that preserve spatial inversion symmetry. The microscopic features that justify our findings are also discussed.Comment: 14 pages, 16 figure

Transmissão de Lasiodiplodia theobromae, agente da resinose, em propágulos de cajueiro.

bitstream/CNPAT-2010/11983/1/Bd-034.pd

Numerical calculation of the Casimir-Polder interaction between a graphene sheet with vacancies and an atom

In this work the Casimir-Polder interaction energy between a rubidium atom and a disordered graphene sheet is investigated beyond the Dirac cone approximation by means of accurate real-space tight-binding calculations. As a model of defected graphene, we consider a tight-binding model of π electrons on a honeycomb lattice with a small concentration of vacancies. The optical response of the graphene sheet is evaluated with full spectral resolution by means of exact Chebyshev polynomial expansions of the Kubo formula in large lattices in excess of 10 million atoms. At low temperatures, the optical response of defected graphene is found to display two qualitatively distinct behaviors with a clear transition around finite (nonzero) Fermi energy. In the vicinity of the Dirac point, the imaginary part of optical conductivity is negative for low frequencies while the real part is strongly suppressed. On the other hand, for high doping, it has the same features found in the Drude model within the Dirac cone approximation, namely, a Drude peak at small frequencies and a change of sign in the imaginary part above the interband threshold. These characteristics translate into a nonmonotonic behavior of the Casimir-Polder interaction energy with very small variation with doping in the vicinity of the neutrality point while having the same form of the interaction calculated with Drude's model at high electronic density