620 research outputs found

    Chiral spin-orbital liquids with nodal lines

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    Strongly correlated materials with strong spin-orbit coupling hold promise for realizing topological phases with fractionalized excitations. Here we propose a chiral spin-orbital liquid as a stable phase of a realistic model for heavy-element double perovskites. This spin liquid state has Majorana fermion excitations with a gapless spectrum characterized by nodal lines along the edges of the Brillouin zone. We show that the nodal lines are topological defects of a non-Abelian Berry connection and that the system exhibits dispersing surface states. We discuss some experimental signatures of this state and compare them with properties of the spin liquid candidate Ba_2YMoO_6.Comment: 5 pages + supplementary materia

    Two Dimensional Quantum Mechanical Modeling of Nanotransistors

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    Quantization in the inversion layer and phase coherent transport are anticipated to have significant impact on device performance in 'ballistic' nanoscale transistors. While the role of some quantum effects have been analyzed qualitatively using simple one dimensional ballistic models, two dimensional (2D) quantum mechanical simulation is important for quantitative results. In this paper, we present a framework for 2D quantum mechanical simulation of a nanotransistor / Metal Oxide Field Effect Transistor (MOSFET). This framework consists of the non equilibrium Green's function equations solved self-consistently with Poisson's equation. Solution of this set of equations is computationally intensive. An efficient algorithm to calculate the quantum mechanical 2D electron density has been developed. The method presented is comprehensive in that treatment includes the three open boundary conditions, where the narrow channel region opens into physically broad source, drain and gate regions. Results are presented for (i) drain current versus drain and gate voltages, (ii) comparison to results from Medici, and (iii) gate tunneling current, using 2D potential profiles. Methods to reduce the gate leakage current are also discussed based on simulation results.Comment: 12 figures. Journal of Applied Physics (to appear

    Study of a Threshold Cherenkov Counter Based on Silica Aerogels with Low Refractive Indices

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    To identify π±\pi^{\pm} and K±K^{\pm} in the region of 1.02.51.0\sim 2.5 GeV/c, a threshold Cherenkov counter equipped with silica aerogels has been investigated. Silica aerogels with a low refractive index of 1.013 have been successfully produced using a new technique. By making use of these aerogels as radiators, we have constructed a Cherenkov counter and have checked its properties in a test beam. The obtained results have demonstrated that our aerogel was transparent enough to make up for loss of the Cherenkov photon yield due to a low refractive index. Various configurations for the photon collection system and some types of photomultipliers, such as the fine-mesh type, for a read out were also tested. From these studies, our design of a Cherenkov counter dedicated to π/K\pi / K separation up to a few GeV/c %in the momentum range of 1.02.51.0 \sim 2.5 GeV/c with an efficiency greater than 9090 \% was considered.Comment: 21 pages, latex format (article), figures included, to be published in Nucl. Instrm. Meth.

    Suppression of non-Poissonian shot noise by Coulomb correlations in ballistic conductors

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    We investigate the current injection into a ballistic conductor under the space-charge limited regime, when the distribution function of injected carriers is an arbitrary function of energy F_c(epsilon). The analysis of the coupled kinetic and Poisson equations shows that the injected current fluctuations may be essentially suppressed by Coulomb correlations, and the suppression level is determined by the shape of F_c(epsilon). This is in contrast to the time-averaged quantities: the mean current and the spatial profiles are shown to be insensitive to F_c(epsilon) in the leading-order terms at high biases. The asymptotic high-bias behavior for the energy resolved shot-noise suppression has been found for an arbitrary (non-Poissonian) injection, which may suggest a new field of investigation on the optimization of the injected energy profile to achieve the desired noise-suppression level.Comment: extended version 4 -> 8 pages, examples and figure adde

    Fast and stable method for simulating quantum electron dynamics

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    A fast and stable method is formulated to compute the time evolution of a wavefunction by numerically solving the time-dependent Schr{\"o}dinger equation. This method is a real space/real time evolution method implemented by several computational techniques such as Suzuki's exponential product, Cayley's form, the finite differential method and an operator named adhesive operator. This method conserves the norm of the wavefunction, manages periodic conditions and adaptive mesh refinement technique, and is suitable for vector- and parallel-type supercomputers. Applying this method to some simple electron dynamics, we confirmed the efficiency and accuracy of the method for simulating fast time-dependent quantum phenomena.Comment: 10 pages, 35 eps figure

    Suppression of non-Poissonian shot noise by Coulomb correlations in ballistic conductors

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    We investigate the current injection into a ballistic conductor under the space-charge limited regime, when the distribution function of injected carriers is an arbitrary function of energy F_c(epsilon). The analysis of the coupled kinetic and Poisson equations shows that the injected current fluctuations may be essentially suppressed by Coulomb correlations, and the suppression level is determined by the shape of F_c(epsilon). This is in contrast to the time-averaged quantities: the mean current and the spatial profiles are shown to be insensitive to F_c(epsilon) in the leading-order terms at high biases. The asymptotic high-bias behavior for the energy resolved shot-noise suppression has been found for an arbitrary (non-Poissonian) injection, which may suggest a new field of investigation on the optimization of the injected energy profile to achieve the desired noise-suppression level.Comment: extended version 4 -> 8 pages, examples and figure adde

    Semiclassical theory of shot noise in ballistic n+-i-n+ semiconductor strucutres: relevance of Pauli and long range Coulomb correlations

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    We work out a semiclassical theory of shot noise in ballistic n+-i-n+ semiconductor structures aiming at studying two fundamental physical correlations coming from Pauli exclusion principle and long range Coulomb interaction. The theory provides a unifying scheme which, in addition to the current-voltage characteristics, describes the suppression of shot noise due to Pauli and Coulomb correlations in the whole range of system parameters and applied bias. The whole scenario is summarized by a phase diagram in the plane of two dimensionless variables related to the sample length and contact chemical potential. Here different regions of physical interest can be identified where only Coulomb or only Pauli correlations are active, or where both are present with different relevance. The predictions of the theory are proven to be fully corroborated by Monte Carlo simulations.Comment: 15 pages, 11 figures. Title changed and Introduction rewritten. Accepted for publication in Physical Review

    A contiuum model for low temperature relaxation of crystal steps

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    High and low temperature relaxation of crystal steps are described in a unified picture, using a continuum model based on a modified expression of the step free energy. Results are in agreement with experiments and Monte Carlo simulations of step fluctuations and monolayer cluster diffusion and relaxation. In an extended model where mass exchange with neighboring terraces is allowed, step transparency and a low temperature regime for unstable step meandering are found.Comment: Submitted to Phys.Rev.Let

    Direct Coulomb and Exchange Interaction in Artificial Atoms

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    We determine the contributions from the direct Coulomb and exchange interactions to the total interaction in semiconductor artificial atoms. We tune the relative strengths of the two interactions and measure them as a function of the number of confined electrons. We find that electrons tend to have parallel spins when they occupy nearly degenerate single-particle states. We use a magnetic field to adjust the single-particle state degeneracy, and find that the spin-configurations in an arbitrary magnetic field are well explained in terms of two-electron singlet and triplet states.Comment: 4 pages, 5 figure

    Group theoretical analysis of symmetry breaking in two-dimensional quantum dots

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    We present a group theoretical study of the symmetry-broken unrestricted Hartree-Fock orbitals and electron densities in the case of a two-dimensional N-electron single quantum dot (with and without an external magnetic field). The breaking of rotational symmetry results in canonical orbitals that (1) are associated with the eigenvectors of a Hueckel hamiltonian having sites at the positions determined by the equilibrium molecular configuration of the classical N-electron problem, and (2) transform according to the irreducible representations of the point group specified by the discrete symmetries of this classical molecular configuration. Through restoration of the total-spin and rotational symmetries via projection techniques, we show that the point-group discrete symmetry of the unrestricted Hartree-Fock wave function underlies the appearance of magic angular momenta (familiar from exact-diagonalization studies) in the excitation spectra of the quantum dot. Furthermore, this two-step symmetry-breaking/symmetry-restoration method accurately describes the energy spectra associated with the magic angular momenta.Comment: A section VI.B entitled "Quantitative description of the lowest rotational band" has been added. 16 pages. Revtex with 10 EPS figures. A version of the manuscript with high quality figures is available at http://calcite.physics.gatech.edu/~costas/uhf_group.html For related papers, see http://www.prism.gatech.edu/~ph274c
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