Structural changes in chlorine-substituted SbSI

Article no. 14101The antimony sulphoiodide (SbSI) is considered a prospective and important ferroelectric material due to its unique properties below Curie temperature Tc. However, the fact that current practical applications require higher working temperatures has prompted new structural improvements that extend the ferroelectric state. In this ternary system, Tc is highly sensitive to any chemical modifications or stress. Therefore, one way to adjust the Tc is through selective substitution of the constituent elements. In this work, SbSI has been fractionally chlorine-substituted at the iodine site and examined using temperature-dependent x-ray diffraction and specific heat capacity methods. Although a considerable increase in Tc has been achieved, a more detailed analysis shows that the Tc increases with x from 0 to 0.2 and starts to decrease when x > 0.2. The maximum Tc increase in the range of x = 0–0.3 is - 15.3%. The reverse behavior, from increase to decrease, is thoroughly discussed with reference to the previously published data on SbSI1-xClx compoundsEdukologijos tyrimų institutasFizinių ir technologijos mokslų centrasMokytojų rengimo institutasVytauto Didžiojo universiteta

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Temperature dependence of raman spectra of Cu2ZnSnSe4 thin films

For CZTSe tetragonal structured film prepared by selenization of layer-by-layer and pre-annealed Cu-Zn-Sn metal precursor on flexible Ta substrate, temperature dependencies of the position and full width at a half maximum for the A-modes (171 and 195 cm-1 ) were obtained in the 24–290 K temperature range and were successfully approximated by the linear and Klemens model equations. From the obtained dependencies, the coefficients of the Klemens equations, as well as the temperature coefficients for Raman shifts and peak widths were calculated

Microstructure and Raman scattering of Cu2ZnSnSe4 thin films deposited onto flexible metal substrates

Abstract—Cu2ZnSnSe4 thin films are produced by selenizing electrochemically layer-by-layer deposited and preliminarily annealed Cu–Zn–Sn precursors. For flexible metal substrates, Mo and Ta foils are used. The morphology, elemental and phase compositions, and crystal structure of Cu2ZnSnSe4 films are studied by scanning electron microscopy, X-ray spectral microanalysis, X-ray phase analysis, and Raman spectroscopy

Microstructure and Raman scattering of Cu2ZnSnSe4 thin films deposited onto flexible metal substrates

Abstract—Cu2ZnSnSe4 thin films are produced by selenizing electrochemically layer-by-layer deposited and preliminarily annealed Cu–Zn–Sn precursors. For flexible metal substrates, Mo and Ta foils are used. The morphology, elemental and phase compositions, and crystal structure of Cu2ZnSnSe4 films are studied by scanning electron microscopy, X-ray spectral microanalysis, X-ray phase analysis, and Raman spectroscopy