25 research outputs found
Structural changes in chlorine-substituted SbSI
Article no. 14101The antimony sulphoiodide (SbSI) is considered a prospective and important ferroelectric material due to its unique properties below Curie temperature Tc. However, the fact that current practical applications require higher working temperatures has prompted new structural improvements that extend the ferroelectric state. In this ternary system, Tc is highly sensitive to any chemical modifications or stress. Therefore, one way to adjust the Tc is through selective substitution of the constituent elements. In this work, SbSI has been fractionally chlorine-substituted at the iodine site and examined using temperature-dependent x-ray diffraction and specific heat capacity methods. Although a considerable increase in Tc has been achieved, a more detailed analysis shows that the Tc increases with x from 0 to 0.2 and starts to decrease when x > 0.2. The maximum Tc increase in the range of x = 0–0.3 is - 15.3%. The reverse behavior, from increase to decrease, is thoroughly discussed with reference to the previously published data on SbSI1-xClx compoundsEdukologijos tyrimų institutasFizinių ir technologijos mokslų centrasMokytojų rengimo institutasVytauto Didžiojo universiteta
«Green access to Pyrrole in Water by Methylated Cyclodextrins assistance»
International audienc
Temperature dependence of raman spectra of Cu2ZnSnSe4 thin films
For CZTSe tetragonal structured film prepared by selenization of layer-by-layer and pre-annealed Cu-Zn-Sn
metal precursor on flexible Ta substrate, temperature dependencies of the position and full width at a half
maximum for the A-modes (171 and 195 cm-1
) were obtained in the 24–290 K temperature range and were
successfully approximated by the linear and Klemens model equations. From the obtained dependencies, the
coefficients of the Klemens equations, as well as the temperature coefficients for Raman shifts and peak
widths were calculated
Microstructure and Raman scattering of Cu2ZnSnSe4 thin films deposited onto flexible metal substrates
Abstract—Cu2ZnSnSe4 thin films are produced by selenizing electrochemically layer-by-layer deposited and
preliminarily annealed Cu–Zn–Sn precursors. For flexible metal substrates, Mo and Ta foils are used. The
morphology, elemental and phase compositions, and crystal structure of Cu2ZnSnSe4 films are studied by
scanning electron microscopy, X-ray spectral microanalysis, X-ray phase analysis, and Raman spectroscopy
Microstructure and Raman scattering of Cu2ZnSnSe4 thin films deposited onto flexible metal substrates
Abstract—Cu2ZnSnSe4 thin films are produced by selenizing electrochemically layer-by-layer deposited and
preliminarily annealed Cu–Zn–Sn precursors. For flexible metal substrates, Mo and Ta foils are used. The
morphology, elemental and phase compositions, and crystal structure of Cu2ZnSnSe4 films are studied by
scanning electron microscopy, X-ray spectral microanalysis, X-ray phase analysis, and Raman spectroscopy