Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet

Thin film transistors based on polyarylamine poly(N,N′-diphenyl-N,N′bis(4-hexylphenyl)-[1,1′biphenyl]-4,4′-diamine (pTPD) were fabricated using spin coating in order to measure the mobility of pTPD upon oxidation. Partially oxidized pTPD with a molecular magnetic cluster showed an increase in mobility of over two orders of magnitude. A transition in the mobility of pTPD upon doping could also be observed by the presence of a maximum obtained for a given oxidant ratio and subsequent decrease for a higher ratio. Such result agrees well with a previously reported model based on the combined effect of dipolar broadening of the density of states and transport manifold [email protected] [email protected]

Sub-wavelength patterning of the optical near-field

We report the sub-wavelength patterning of the optical near-field by total internal reflection illumination of a regular array of resonant gold nano-particles. Under appropriate conditions, the in-plane coupling between Localized Surface Plasmon (LSP) fields gives rise to sub-wavelength light spots between the structures. Measurements performed with an Apertureless Scanning Near-Field Optical Microscope (ASNOM) show a good agreement with theoretical predictions based on the Green dyadic method. This concept might offer a convenient way to elaborate extended optical trap landscapes for manipulation of sub-micrometer systems.Peer ReviewedPostprint (published version

Structural, Vibrational, and Electronic Study of α‑As2Te3 under Compression

This document is the Accepted Manuscript version of a Published Work that appeared in final form in Journal of Physical Chemistry C, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://dx.doi.org/10.1021/acs.jpcc.6b06049We report a study of the structural, vibrational, and electronic properties of layered monoclinic arsenic telluride (α-As2Te3) at high pressures. Powder X-ray diffraction and Raman scattering measurements up to 17 GPa have been complemented with ab initio total-energy, lattice dynamics, and electronic band structure calculations. Our measurements, which include previously unreported Raman scattering measurements for crystalline α-As2Te3, show that this compound undergoes a reversible phase transition above 14 GPa at room temperature. The monoclinic crystalline structure of α-As2Te3 and its behavior under compression are analyzed by means of the compressibility tensor. Major structural and vibrational changes are observed in the range between 2 and 4 GPa and can be ascribed to the strengthening of interlayer bonds. No evidence of any isostructural phase transition has been observed in α-As2Te3. A comparison with other group 15 sesquichalcogenides allows understanding the structure of α-As2Te3 and its behavior under compression based on the activity of the cation lone electron pair in these compounds. Finally, our electronic band structure calculations show that α-As2Te3 is a semiconductor at 1 atm, which undergoes a trivial semiconducting−metal transition above 4 GPa. The absence of a pressure-induced electronic topological transition in α-As2Te3 is discussed.This work has been performed under financial support from Projects MAT2013-46649-C4-2-P, MAT2013-46649-C4-3-P, MAT2015-71070-REDC, FIS2013-48286-C2-1-P, and FIS2013-48286-C2-2-P of the Spanish Ministry of Economy and Competitiveness (MINECO), and the Department of Education, Universities and Research of the Basque Government and UPV/EHU (Grant No. IT756-13). This publication is also fruit of "Programa de Valoracion y Recursos Conjuntos de I+D+i VLC/CAMPUS" and has been financed by the Spanish Ministerio de Educacion, Cultura y Deporte as part of "Programa Campus de Excelencia Internacional" through Projects SP20140701 and SP20140871. Finally, authors thank ALBA Light Source for beam allocation at beamline MSPD.Cuenca Gotor, VP.; Sans-Tresserras, JÁ.; Ibáñez, J.; Popescu, C.; Gomis, O.; Vilaplana Cerda, RI.; Manjón Herrera, FJ.... (2016). Structural, Vibrational, and Electronic Study of α‑As2Te3 under Compression. Journal of Physical Chemistry C. 120(34):19340-19352. https://doi.org/10.1021/acs.jpcc.6b06049S19340193521203

Interchain and intrachain emission branching in polymer light-emitting diode doped by organic molecules

A blend of the polymer poly 2- 2-ethylhexyloxy -5-methoxy-1,4-phenylenevinylene MEH-PPV and the electron-transport molecule tris- 8-hydroxyquinoline aluminum Alq3 has been investigated by means of electroluminescence and fluorescence spectroscopy, upon variation of the Alq3 content in the blend.Adecreased interchain emission is observed upon increasing Alq3 content, due to lower packing of the MEH-PPV chains which leads to a reduction in the interchain interaction, excimer formation, and emission probability. A branching of MEH-PPV interchain and intrachain emissive contributions is clearly time resolved and analyzed as a function of the Alq3 content. At high doping concentration, direct emission from Alq3 molecules is observed

Investigation on the thickness dependence of the electrical characteristics of a monolayer polymeric LED

A novel –OPhCN substituted polythiophenic copolymer (with 3-hexylthiophene, PHT, as an internal plastifying agent), named PTOPhCN, has been used as active material for the realization of electroluminescent devices. The polymer possesses in the solid state (thin film) an evident and bright photoluminescence with a double emission peak between 570 and 650 nm in film. In solution the PTOPhCN emission is slightly blue-shifted. PTOPhCN is well processable from many solvents (CHCl3, chlorobenzene, THF, etc), and it forms smooth, free-standing and amorphous films of thicknesses ranging from 10 to 400-500 microns, by drop casting or spin coating. Basic monolayer devices based on PTOPhCN have been realized, with different thicknesses. The devices have been tested for J-V curves and EL. In general, the EL characteristics of these devices are very interesting, since also without any hole injecting layer current densities as high as 250 A/m2. Moreover, in a new experimental setup (EL measured from the ITO side) a 80 nm-thick single layer device gave a turn-on voltage of 4 V