Two-phase RTD-CMOS pipelined circuits

MOnostable-BIstable Logic Element (MOBILE) networks can be operated in a gate-level pipelined fashion (nanopipeline) allowing high through output. Resonant tunneling diode (RTD)-based MOBILE nanopipelined circuits have been reported using different clock schemes including a four-phase strategy and a single-phase clock scheme. In particular, significant power advantages of single-phase RTD-CMOS MOBILE circuits over pure CMOS have been shown. This letter compares the RTD-CMOS realizations using a single clock and a novel two-phase clock solution. Significant superior robustness and performance in terms of power and area are obtained for the two-phase implementations

Efficient state reduction methods for PLA-based sequential circuits

Experiences with heuristics for the state reduction of finite-state machines are presented and two new heuristic algorithms described in detail. Results on machines from the literature and from the MCNC benchmark set are shown. The area of the PLA implementation of the combinational component and the design time are used as figures of merit. The comparison of such parameters, when the state reduction step is included in the design process and when it is not, suggests that fast state-reduction heuristics should be implemented within FSM automatic synthesis systems

Efficient realization of a threshold voter for self-purging redundancy

The self-purging technique is not commonly used mainly due to the lack of practical implementations of its key component, the threshold voter. A very efficient implementation of this voter is presented which uses a decomposition technique to substantially reduce the circuit complexity and delay, as compared to alternative implementations.Comisión Interministerial de Ciencia y Tecnología TIC97-064

RTD based logic circuits using generalized threshold gates

Many logic circuit applications of Resonant Tunneling Diodes are based on the MOnostable-BIstable Logic Element (MOBILE). Threshold logic is a computational model widely used in the design of MOBILE circuits, i.e. these circuits are built from threshold gates (TGs). The MOBILE realization of generalized threshold gates is being investigated. Multi-Threshold Threshold Gates (MTTGs) have been proposed which further increase the functionality of the original TGs. Recently, we have proposed a novel MOBILE circuit topology obtained by fundamental properties of threshold functions. This paper describes the design of n-bit adders using these novel MOBILE circuit topologies. A comparison with designs based on TGs and MTTGs is carried out showing advantages in terms of speed and power delay product and device counts.España, Gobierno TEC2007-67245Junta de Andalucía EXC/2007/TIC-296

Sorting networks implemented as νMOS circuits

A new realisation for n-input sorters is presented. Resorting to the neuron-MOS (νMOS) concept and to an adequate electrical scheme, a compact and efficient implementation is obtained.Comisión Interministerial de Ciencia y Tecnología TIC95-0094, TIC97-064

Simplified single-phase clock scheme for MOBILE networks

MOBILE networks can be operated in a gate-level pipelined fashion allowing high through-output. If MOBILE gates are directly chained, a four-phase clock scheme is required for this. A single-phase scheme is possible adding latches to the MOBILE gates. Proposed and experimentally validated is a new single-phase interconnection scheme that simplifies the inter-stage element, which translates in power, area and clock load advantages with respect to using latches.Ministerio de Ciencia e Innovación TEC2007-67245, TEC2010-18937Junta de Andalucía TIC-296

Redes MOBILE MOS-NDR operando con reloj de una fase

La existencia de dispositivos con una característica I-V que exhibe una resistencia diferencial negativa (Negative Differential Resistance, NDR) resulta atractiva desde el punto de vista del diseño de circuitos, como ha sido demostrado por los circuitos que usan diodos basados en el efecto túnel resonante (Resonant Tunneling Diodes, RTDs). Ideas procedentes de diseños con RTDs pueden exportarse a un entorno “todo CMOS” en el que la característica NDR se obtiene mediante transistores (MOS-NDR). En este artículo se proponen estructuras MOS-NDR para realizar puertas lógicas (Threshold Gates, TGs) que operan según el principio de operación MOBILE (MOnostable to BIstable Logic Element). Además, se demuestra que estas puertas pueden interconectarse para formar redes que operan en modo pipeline usando un esquema de reloj de una fase.España, Ministerio de Investigación y Ciencia TEC2007-67245España, Junta de Andalucía P07-TIC-0296

Efficient realisation of MOS-NDR threshold logic gates

A novel realisation of inverted majority gates based on a programmable MOS-NDR device is presented. A comparison, in terms of area and power consumption, has been performed to demonstrate that the proposed circuit is more efficient than a similar reported structure.Gobierno de España - NDR, TEC2007-67245/MICJunta de Andalucía - Proyecto de Excelencia TIC-296

RTD-CMOS pipelined networks for reduced power consumption

The incorporation of resonant tunneling diodes (RTDs) into III/V transistor technologies has shown an improved circuit performance, producing higher circuit speed, reduced component count, and/or lower power consumption. Currently, the incorporation of these devices into CMOS technologies (RTD-CMOS) is an area of active research. Although some studies have concentrated on evaluating the advantages of this incorporation, more work in this direction is required. In this letter, we compare RTD-CMOS and pure CMOS realizations of a logic gate network which can be operated in a gate-level pipeline. Significantly lower average power is obtained for RTD-CMOS implementations.Gobierno de España TEC2007-67245, TEC2010-18937Junta de Andalucía TIC-296

Bifurcation Diagrams in MOS-NDR Frequency Divider Circuits

Comunicación presentada al "Iberchip XVIII Workshop " celebrado en Playa del Carmen (México) del 29 de Febrero al 2 de Marzo del 2012.-- Presentado posteriormente al "19th IEEE International Conference on Electronics, Circuits and Systems (ICECS)" celebrado en Sevilla (España) del 9 al 12 de Diciembre del 2012.The behavior of a circuit able to implement frequency division is studied. It is composed of a block with an IV characteristic exhibiting Negative Differential Resistance (NDR) built from MOS transistors plus an inductor and a resistor. Frequency division is obtained from the period adding sequences which appear in its bifurcation diagram. The analyzed circuit is an “all MOS” version of one previously reported which use Resonant Tunneling Diodes (RTDs) The results show that the dividing ratio can be selected by modulating the input signal frequency, in a similar way to the RTD-based circuit.Gobierno de España TEC2007-67245/MICJunta de Andalucía. Consejería de Innovación, Ciencia y Empresas P07-TIC-0296