Crossover of conduction mechanism in Sr2IrO4 epitaxial thin films

High quality epitaxial Sr2IrO4 thin films with various thicknesses (9-300 nm) have been grown on SrTiO3 (001) substrates, and their electric transport properties have been investigated. All samples showed the expected insulating behavior with a strong resistivity dependence on film thickness, that can be as large as three orders of magnitude at low temperature. A close examination of the transport data revealed interesting crossover behaviors for the conduction mechanism upon variation of thickness and temperature. While Mott variable range hopping (VRH) dominated the transport for films thinner than 85 nm, high temperature thermal activation behavior was observed for films with large thickness, which was followed by a crossover from Mott to Efros-Shklovskii (ES) VRH in the low temperature range. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~3 meV). Our results demonstrate the competing and tunable conduction in Sr2IrO4 thin films, which in turn would be helpful for understanding the insulating nature related to strong spin-orbit-coupling of the 5d iridates

Spin transport in as-grown and annealed thulium iron garnet/platinum bilayers with perpendicular magnetic anisotropy

We characterize the spin Hall magnetoresistance (SMR), spin Seebeck effect (SSE), and dampinglike spin-orbit torque (SOT) in thulium iron garnet/platinum bilayers with perpendicular magnetic anisotropy by using harmonic Hall effect measurements. By consecutive annealing steps followed by measurements on a single device, we reveal that the spin-dependent effects gradually decrease in amplitude as the annealing temperature increases. We attribute this behavior primarily to the changes in the spin-mixing conductance, which sensitively depends on the interface quality. However, further analysis demonstrates that although the SSE scales closely with the SMR, the dampinglike SOT shows a significantly different trend upon annealing, contrary to theoretical expectations. By comparing the dampinglike SOT with the field-induced Hall effect, we found evidence that scattering from Fe impurities in the Pt at the interface might be responsible for the distinct annealing temperature dependence of the dampinglike SOT.Deutsche ForschungsgemeinschaftUnited States. Defense Advanced Research Projects Agency (C-SPIN, a SRC STARnet Center)Microelectronics Advanced Research Corporation (MARCO) (C-SPIN, a SRC STARnet Center

Nanocrystalline Ferroelectric BiFeO3 Thin Films by Low-Temperature Atomic Layer Deposition

© 2015 American Chemical Society. In this work, ferroelectricity is identified in nanocrystalline BiFeO3 (BFO) thin films prepared by low-temperature atomic layer deposition. A combination of X-ray diffraction, reflection high energy electron diffraction, and scanning transmission electron microscopy analysis indicates that the as-deposited films (250 °C) consist of BFO nanocrystals embedded in an amorphous matrix. Postannealing at 650 °C for 60 min converts the sample to a crystalline film on a SrTiO3 substrate. Piezoelectric force microscopy demonstrates the existence of ferroelectricity in both as-deposited and postannealed films. The ferroelectric behavior in the as-deposited stage is attributed to the presence of nanocrystals. Finally, a band gap of 2.7 eV was measured by spectroscopic ellipsometry. This study opens broad possibilities toward ferroelectric oxides on 3D substrates and also for the development of new ferroelectric perovskites prepared at low temperature.This research was supported by MAT2011-28874-C02-01, MAT2014-511778-C2-1-R, SGR753 and Consolider. M.C. and J.G. acknowledge RyC contracts, 2013-12448 and 2012-11709, respectively. I.F. acknowledges the Beatriu de Pinós postdoctoral scholarship (2011 BP-A 00220) from AGAURGeneralitat de Catalunya. Financial support from the ERC Starting investigator grant STEMOX 239739 and Consolider IMAGINE is acknowledged (M.V.).Peer Reviewe

Temperature-dependent Faraday rotation and magnetization reorientation in cerium-substituted yttrium iron garnet thin films

We report on the temperature dependence of the magnetic and magneto-optical properties in cerium-substituted yttrium iron garnet (Ce: YIG) thin films. Measurements of the Faraday rotation as a function of temperature show that the magnetic easy axis of thin Ce: YIG films reorients from in-plane to out-of-plane on cooling below -100 degrees C. We argue that the temperature-dependence of the magnetostriction and magnetocrystalline anisotropy of Ce: YIG is the dominant factor contributing to the change in easy axis direction, and we describe the changes in the magneto-optical spectra with temperature.National Science Foundation (U.S.) (Award ECCS-1607865)United States. Defense Advanced Research Projects Agency (Award FA8650-16-1-7641

Tm3Fe5O12/Pt Heterostructures with Perpendicular Magnetic Anisotropy for Spintronic Applications

With recent developments in the field of spintronics, ferromagnetic insulator (FMI) thin films have emerged as an important component of spintronic devices. Ferrimagnetic yttrium iron garnet in particular is an excellent insulator with low Gilbert damping and a Curie temperature well above room temperature, and has been incorporated into heterostructures that exhibit a plethora of spintronic phenomena including spin pumping, spin Seebeck, and proximity effects. However, it has been a challenge to develop high quality sub-10 nm thickness FMI garnet films with perpendicular magnetic anisotropy (PMA) and PMA garnet/heavy metal heterostructures to facilitate advances in spin-current and anomalous Hall phenomena. Here, robust PMA in ultrathin thulium iron garnet (TmIG) films of high structural quality down to a thickness of 5.6 nm are demonstrated, which retain a saturation magnetization close to bulk. It is shown that TmIG/Pt bilayers exhibit a large spin Hall magnetoresistance (SMR) and SMR-driven anomalous Hall effect, which indicates efficient spin transmission across the TmIG/Pt interface. These measurements are used to quantify the interfacial spin mixing conductance in TmIG/Pt and the temperature-dependent PMA of the TmIG thin film

Four-state ferroelectric spin-valve

This work is licensed under a Creative Commons Attribution 4.0 International License.Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. In this letter, we show that, without the deliberate introduction of such an AFM layer, this functionality is transferred to multiferroic tunnel junctions (MFTJ) allowing us to create a four-state resistive memory device. We observed that the ferroelectric/ferromagnetic interface plays a crucial role in the stabilization of the exchange bias, which ultimately leads to four robust electro tunnel electro resistance (TER) and tunnel magneto resistance (TMR) states in the junction.I.F. acknowledges the Beatriu de Pinós postdoctoral scholarship (2011 BP-A 00220) from the Catalan Agency for Management of University and Research Grants (AGAUR-Generalitat de Catalunya). Work in part supported by the German Research Foundation (DFG) via SFB 762. The Beatriu de Pinós 2011BP-A00220 postdoctoral grant is acknowledged by I.F.Peer Reviewe

Four-state ferroelectric spin-valve

Altres ajuts: Beatriu de Pinós 2011BP-A00220Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. In this letter, we show that, without the deliberate introduction of such an AFM layer, this functionality is transferred to multiferroic tunnel junctions (MFTJ) allowing us to create a four-state resistive memory device. We observed that the ferroelectric/ferromagnetic interface plays a crucial role in the stabilization of the exchange bias, which ultimately leads to four robust electro tunnel electro resistance (TER) and tunnel magneto resistance (TMR) states in the junction