Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies.

Hafnium and Zirconium based gate dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in CMOS processing. Furthermore, the addition of nitrogen into this pseudo-binary alloy has been shown to improve their thermal stability, electrical properties, and reduce dopant penetration. Because CMOS processing requires high temperature anneals (up to 1050 °C), it is important to understand the diffusion properties of any metal associated with the gate dielectric in silicon at these temperatures. In addition, dopant penetration from the doped polysilicon gate into the Si channel at these temperatures must also be studied. Impurity outdiffusion (Hf, Zr) from the dielectric, or dopant (B, As, P) penetration through the dielectric into the channel region would likely result in deleterious effects upon the carrier mobility. In this dissertation extensive thermal stability studies of alternate gate dielectric candidates ZrSixOy and HfSixOy are presented. Dopant penetration studies from doped-polysilicon through HfSixOy and HfSixOyNz are also presented. Rutherford backscattering spectroscopy (RBS), heavy ion RBS (HI-RBS), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HR-TEM), and time of flight and dynamic secondary ion mass spectroscopy (ToF-SIMS, D-SIMS) methods were used to characterize these materials. The dopant diffusivity is calculated by modeling of the dopant profiles in the Si substrate. In this disseration is reported that Hf silicate films are more stable than Zr silicate films, from the metal interdiffusion point of view. On the other hand, dopant (B, As, and P) penetration is observed for HfSixOy films. However, the addition of nitrogen to the Hf - Si - O systems improves the dopant penetration properties of the resulting HfSixOyNz films

Relatively low-temperature processing and its impact on device performance and reliability

Non-silicon, large-area/flexible electronics for the internet of things (IoT) has acquired substantial attention in recent years. Key electron devices to enable this technology include metal-oxide-semiconductor field effect transistors (MOSFETs), where ultra-thin and/or low-dimensional (i.e., 2D to a few layers) semiconductor materials may be required, like those found in thin-film transistors (TFTs) and transition metal dichalcogenide (TMD) FETs [1,2]. Whether TFT or TMDFET, a relatively low-temperature process commensurate with large-area/flex applications to enable large (i.e., greater than 300 mm) and/or flexible substrate fabrication is required. Furthermore, TMD materials may be implemented as the channel semiconductor to function as an ultra-thin body to mitigate short channel effects and extend further scaling as the future progresses in CMOS scaling. In addition, the gate dielectric insulator is another vital component of any MOSFET that requires investigation as part of the MOS stack in these types of transistors. Lastly, semiconductor materials mentioned herein do not have a universally accepted way to introduce dopants to form sources and drains. Thus, metal-semiconductor contacts are employed where the interface region of the contact plays a critical role in determining the conductivity/resistivity of the contact. Moreover, how the metal-semiconductor interface are formed also impacts the quality of the contact. Therefore, exploration of low-temperature processing, interfaces, and their impact on device performance and reliability will be critical to eventual implementation in future technologies. To ascertain the impact of low-temperature fabrication and critical interfaces, several process approaches and electrical characterization methods were employed [1-6]. In one case, for a TMD FET contact study, an oxygen plasma exposure in the contact region on MoS2 (a TMD material) is done prior to titanium deposition. The results demonstrate that contaminants and photoresist residue that still reside after development can noticeably impact electrical performance (Fig. 1). The O2 plasma removes the residue present at the surface of MoS2 without the use of a high temperature anneal, and subsequently improves the device performance significantly (Fig. 1) [1]. In another case, for a MOS-based TFT study, an investigation of low-temperature (\u3e 115°C) deposited zinc-based semiconductors was executed (Fig. 2). For ZnO and IGZO, saturation mobilities of 14.4 and 8.4 cm2/V-s, along with threshold voltages of 2.2 V and 2.0 V were obtained, respectively, demonstrating robust devices that also have an on/off ratio \u3e 108, with IOFF lower than 10-12 A. Furthermore, a hot carrier stress methodology demonstrated threshold voltage (VTH) shifts of 0.4 V and 1.8 V for ZnO and IGZO, respectively, after stress (Fig. 2) [2]. Continued research is required to ascertain the electrically active defects responsible for the VTH shift. Please click Additional Files below to see the full abstract

Nitroxide-Functionalized Graphene Oxide from Graphite Oxide

A facile method for preparing functionalized graphene oxide single layers with nitroxide groups is reported herein. Highly oxidized graphite oxide (GO=90.6%) was obtained, slightly modifying an improved Hummer’s method. Oxoammonium salts (OS) were investigated to introduce nitroxide groups to GO, resulting in a one-step functionalization and exfoliation. The mechanisms of functionalization/exfoliation are proposed, where the oxidation of aromatic alcohols to ketone groups, and the formation of alkoxyamine species are suggested. Two kinds of functionalized graphene oxide layers (GOFT1 and GOFT2) were obtained by controlling the amount of OS added. GOFT1 and GOFT2 exhibited a high interlayer spacing (d0001 = 1.12nm), which was determined by X-ray diffraction. The presence of new chemical bonds C-N (~9.5 %) and O-O (~4.3 %) from nitroxide attached onto graphene layers were observed by X-ray photoelectron spectroscopy. Single-layers of GOFT1 were observed by HRTEM, exhibiting amorphous and crystalline zones at a 50:50 ratio; in contrast, layers of GOFT2 exhibited a fully amorphous surface. Fingerprint of GOFT1 single layers was obtained by electron diffraction at several tilts. Finally, the potential use of these materials within Nylon 6 matrices was investigated, where an unusual simultaneous increase in tensile stress, tensile strain and Young’s modulus was observed

Evaluation of CdS Interfacial Layers in ZnO Nanowire/Poly(3-Hexylthiophene) Solar Cells

We prepare ZnO:poly(3-hexylthiophene) (P3HT) thin-film solar cells and ZnO nanowire:P3HT nanostructured solar cells and evaluate the effect of adding an interfacial layer between the ZnO and P3HT as a function of the nanowire height. We evaluate several different interlayers of CdS deposited, using two different chemical bath deposition (CBD) recipes. The height of the nanowire array is varied from a bilayer device with no nanowires up to arrays with a height of 2 μm. We find that achieving a conformal coating of the ZnO with the interfacial layer is critical to improve device performance and that CBD can be used to grow conformal films on nonuniform surfaces

Quantification of inaccurate diagnosis of COPD in primary care medicine: An analysis of the COACH clinical audit

Background: Inaccurate diagnosis in COPD is a current problem with relevant consequences in terms of inefficient health care, which has not been thoroughly studied in primary care medicine. The aim of the present study was to evaluate the degree of inaccurate diagnosis in Primary Care in Spain and study the determinants associated with it. Methods: The Community Assessment of COPD Health Care (COACH) study is a national, observational, randomized, non-interventional, national clinical audit aimed at evaluating clinical practice for patients with COPD in primary care medicine in Spain. For the present analysis, a correct diagnosis was evaluated based on previous exposure and airway obstruction with and without the presence of symptoms. The association of patient-level and center-level variables with inaccurate diagnosis was studied using multivariate multilevel binomial logistic regression models. Results: During the study 4,307 cases from 63 centers were audited. The rate of inaccurate diagnosis was 82.4% (inter-regional range from 76.8% to 90.2%). Patient-related interventions associated with inaccurate diagnosis were related to active smoking, lung function evaluation, and specific therapeutic interventions. Center-level variables related to the availability of certain complementary tests and different aspects of the resources available were also associated with an inaccurate diagnosis. Conclusions: The prevalence data for the inaccurate diagnosis of COPD in primary care medicine in Spain establishes a point of reference in the clinical management of COPD. The descriptors of the variables associated with this inaccurate diagnosis can be used to identify cases and centers in which inaccurate diagnosis is occurring considerably, thus allowing for improvement

Genome-Wide Crossover Distribution in Arabidopsis thaliana Meiosis Reveals Sex-Specific Patterns along Chromosomes

In most species, crossovers (COs) are essential for the accurate segregation of homologous chromosomes at the first meiotic division. Their number and location are tightly regulated. Here, we report a detailed, genome-wide characterization of the rate and localization of COs in Arabidopsis thaliana, in male and female meiosis. We observed dramatic differences between male and female meiosis which included: (i) genetic map length; 575 cM versus 332 cM respectively; (ii) CO distribution patterns: male CO rates were very high at both ends of each chromosome, whereas female CO rates were very low; (iii) correlations between CO rates and various chromosome features: female CO rates correlated strongly and negatively with GC content and gene density but positively with transposable elements (TEs) density, whereas male CO rates correlated positively with the CpG ratio. However, except for CpG, the correlations could be explained by the unequal repartition of these sequences along the Arabidopsis chromosome. For both male and female meiosis, the number of COs per chromosome correlates with chromosome size expressed either in base pairs or as synaptonemal complex length. Finally, we show that interference modulates the CO distribution both in male and female meiosis

Hacia una visión compartida sobre la seguridad climática en Guatemala

Este infore explora las interconexiones entre el cambio climático, la seguridad humana y los conflictos en Guatemala basándose en el Taller sobre Seguridad Climática celebrado en Ciudad de Guatemala los días 21 y 22 de febrero de 2023. Las implicaciones del cambio climático para la seguridad, comúnmente conocidas como el nexo clima-seguridad, han sido ampliamente discutidas tanto en círculos políticos como académicos. La seguridad climática se refiere las amenazas y riesgos de seguridad a estados, sociedades e individuos causados directa o indirectamente por los efectos del cambio climático. Los riesgos de seguridad en este documento son entendidos de una manera amplia enfocándose no solo en los riesgos de seguridad nacional vistos desde el punto de vista de los estados sino, principalmente, en los riesgos de seguridad humana enfocados en los retos para la supervivencia y los medios de vida de la población que incluye la seguridad económica, alimentaria, sanitaria, medioambiental, personal, comunitaria y política (UNTFHS, 2016)

Clonal chromosomal mosaicism and loss of chromosome Y in elderly men increase vulnerability for SARS-CoV-2

The pandemic caused by severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2, COVID-19) had an estimated overall case fatality ratio of 1.38% (pre-vaccination), being 53% higher in males and increasing exponentially with age. Among 9578 individuals diagnosed with COVID-19 in the SCOURGE study, we found 133 cases (1.42%) with detectable clonal mosaicism for chromosome alterations (mCA) and 226 males (5.08%) with acquired loss of chromosome Y (LOY). Individuals with clonal mosaic events (mCA and/or LOY) showed a 54% increase in the risk of COVID-19 lethality. LOY is associated with transcriptomic biomarkers of immune dysfunction, pro-coagulation activity and cardiovascular risk. Interferon-induced genes involved in the initial immune response to SARS-CoV-2 are also down-regulated in LOY. Thus, mCA and LOY underlie at least part of the sex-biased severity and mortality of COVID-19 in aging patients. Given its potential therapeutic and prognostic relevance, evaluation of clonal mosaicism should be implemented as biomarker of COVID-19 severity in elderly people. Among 9578 individuals diagnosed with COVID-19 in the SCOURGE study, individuals with clonal mosaic events (clonal mosaicism for chromosome alterations and/or loss of chromosome Y) showed an increased risk of COVID-19 lethality