1,989 research outputs found
Dynamical Axion Field in Topological Magnetic Insulators
Axions are very light, very weakly interacting particles postulated more than
30 years ago in the context of the Standard Model of particle physics. Their
existence could explain the missing dark matter of the universe. However,
despite intensive searches, they have yet to be detected. In this work, we show
that magnetic fluctuations of topological insulators couple to the
electromagnetic fields exactly like the axions, and propose several experiments
to detect this dynamical axion field. In particular, we show that the axion
coupling enables a nonlinear modulation of the electromagnetic field, leading
to attenuated total reflection. We propose a novel optical modulators device
based on this principle.Comment: 5 pages, 3 figure
Quantum measurement characteristics of double-dot single electron transistor
Owing to a few unique advantages, double-dot single electron transistor has
been proposed as an alternative detector for charge states. In this work, we
present a further study for its signal-to-noise property, based on a full
analysis of the setup configuration symmetry. It is found that the
effectiveness of the double-dot detector can approach that of an ideal
detector, if the symmetric capacitive coupling is taken into account. The
quantum measurement efficiency is also analyzed, by comparing the measurement
time with the measurement-induced dephasing time.Comment: 7 pages, 5 figure
Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators
Three-dimensional (3D) topological insulators (TI) are novel quantum
materials with insulating bulk and topologically protected metallic surfaces
with Dirac-like band structure. The spin-helical Dirac surface states are
expected to host exotic topological quantum effects and find applications in
spintronics and quantum computation. The experimental realization of these
ideas requires fabrication of versatile devices based on bulk-insulating TIs
with tunable surface states. The main challenge facing the current TI materials
exemplified by Bi2Se3 and Bi2Te3 is the significant bulk conduction, which
remains unsolved despite extensive efforts involving nanostructuring, chemical
doping and electrical gating. Here we report a novel approach for engineering
the band structure of TIs by molecular beam epitaxy (MBE) growth of
(Bi1-xSbx)2Te3 ternary compounds. Angle-resolved photoemission spectroscopy
(ARPES) and transport measurements show that the topological surface states
exist over the entire composition range of (Bi1-xSbx)2Te3 (x = 0 to 1),
indicating the robustness of bulk Z2 topology. Most remarkably, the systematic
band engineering leads to ideal TIs with truly insulating bulk and tunable
surface state across the Dirac point that behave like one quarter of graphene.
This work demonstrates a new route to achieving intrinsic quantum transport of
the topological surface states and designing conceptually new TI devices with
well-established semiconductor technology.Comment: Minor changes in title, text and figures. Supplementary information
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A conceptual model of performance measurement for supply chains
Supply chain management (SCM) has gained a tremendous amount of attention from both industries and researchers since the last decade. Until now, there are numerous papers, articles, and reports that address SCM, but there is still a lack of integration between the existing performance measurement methods and practical requirements for the SCM. An innovative performance measurement method is proposed to provide necessary assistance for performance improvement in SCM. The proposed method will address this purpose in these four aspects: a simplified supply chain model; tangible and intangible performance measures in multiple dimensions; a cross-organizational performance measurement; and fuzzy set theory and weighted average method.published_or_final_versio
Gate-tuned normal and superconducting transport at the surface of a topological insulator
Three-dimensional topological insulators are characterized by the presence of
a bandgap in their bulk and gapless Dirac fermions at their surfaces. New
physical phenomena originating from the presence of the Dirac fermions are
predicted to occur, and to be experimentally accessible via transport
measurements in suitably designed electronic devices. Here we study transport
through superconducting junctions fabricated on thin Bi2Se3 single crystals,
equipped with a gate electrode. In the presence of perpendicular magnetic field
B, sweeping the gate voltage enables us to observe the filling of the Dirac
fermion Landau levels, whose character evolves continuously from electron- to
hole-like. When B=0, a supercurrent appears, whose magnitude can be gate tuned,
and is minimum at the charge neutrality point determined from the Landau level
filling. Our results demonstrate how gated nano-electronic devices give control
over normal and superconducting transport of Dirac fermions at an individual
surface of a three-dimensional topological insulator.Comment: 28 pages, 5 figure
Spin-Rotation Symmetry Breaking in the Superconducting State of CuxBi2Se3
Spontaneous symmetry breaking is an important concept for understanding
physics ranging from the elementary particles to states of matter. For example,
the superconducting state breaks global gauge symmetry, and unconventional
superconductors can break additional symmetries. In particular, spin rotational
symmetry is expected to be broken in spin-triplet superconductors. However,
experimental evidence for such symmetry breaking has not been conclusively
obtained so far in any candidate compounds. Here, by 77Se nuclear magnetic
resonance measurements, we show that spin rotation symmetry is spontaneously
broken in the hexagonal plane of the electron-doped topological insulator
Cu0.3Bi2Se3 below the superconducting transition temperature Tc=3.4 K. Our
results not only establish spin-triplet superconductivity in this compound, but
may also serve to lay a foundation for the research of topological
superconductivity
Influence of the initial chemical conditions on the rational design of silica particles
The influence of the water content in the initial composition on the size of silica particles produced using the Stöber process is well known. We have shown that there are three morphological regimes defined by compositional boundaries. At low water levels (below stoichiometric ratio of water:tetraethoxysilane), very high surface area and aggregated structures are formed; at high water content (>40 wt%) similar structures are also seen. Between these two boundary conditions, discrete particles are formed whose size are dictated by the water content. Within the compositional regime that enables the classical Stöber silica, the structural evolution shows a more rapid attainment of final particle size than the rate of formation of silica supporting the monomer addition hypothesis. The clearer understanding of the role of the initial composition on the output of this synthesis method will be of considerable use for the establishment of reliable reproducible silica production for future industrial adoption
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Computational design for 4D printing of topology optimized multi-material active composites
Recent efforts on design for four-dimensional (4D) printing have considered the spatial arrangement of smart materials and energy stimuli. The development of multifunctional structures and their desired mechanical/actuation performances require tackling 4D printing from a multi-material design perspective. With the materials distributions there is an opportunity to increase the spectrum of design concepts with computational approaches. The main goal being to achieve the “best” distribution of material properties in a voxelized structure, a computational framework that consists of a finite element analysis-based evolutionary algorithm is presented. It fuses the advantages of optimizing both the materials distribution and material layout within a design space via topology optimization to solve the inverse design problem of finding an optimal design to achieve a target shape change by integrating void voxels. The results demonstrate the efficacy of the proposed method in providing a highly capable tool for the design of 4D-printed active composites
Human hippocampal neurogenesis drops sharply in children to undetectable levels in adults.
New neurons continue to be generated in the subgranular zone of the dentate gyrus of the adult mammalian hippocampus. This process has been linked to learning and memory, stress and exercise, and is thought to be altered in neurological disease. In humans, some studies have suggested that hundreds of new neurons are added to the adult dentate gyrus every day, whereas other studies find many fewer putative new neurons. Despite these discrepancies, it is generally believed that the adult human hippocampus continues to generate new neurons. Here we show that a defined population of progenitor cells does not coalesce in the subgranular zone during human fetal or postnatal development. We also find that the number of proliferating progenitors and young neurons in the dentate gyrus declines sharply during the first year of life and only a few isolated young neurons are observed by 7 and 13 years of age. In adult patients with epilepsy and healthy adults (18-77 years; n = 17 post-mortem samples from controls; n = 12 surgical resection samples from patients with epilepsy), young neurons were not detected in the dentate gyrus. In the monkey (Macaca mulatta) hippocampus, proliferation of neurons in the subgranular zone was found in early postnatal life, but this diminished during juvenile development as neurogenesis decreased. We conclude that recruitment of young neurons to the primate hippocampus decreases rapidly during the first years of life, and that neurogenesis in the dentate gyrus does not continue, or is extremely rare, in adult humans. The early decline in hippocampal neurogenesis raises questions about how the function of the dentate gyrus differs between humans and other species in which adult hippocampal neurogenesis is preserved
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