62 research outputs found
Atomic Scale Memory at a Silicon Surface
The limits of pushing storage density to the atomic scale are explored with a
memory that stores a bit by the presence or absence of one silicon atom. These
atoms are positioned at lattice sites along self-assembled tracks with a pitch
of 5 atom rows. The writing process involves removal of Si atoms with the tip
of a scanning tunneling microscope. The memory can be reformatted by controlled
deposition of silicon. The constraints on speed and reliability are compared
with data storage in magnetic hard disks and DNA.Comment: 13 pages, 5 figures, accepted by Nanotechnolog
Imaging Oxygen Defects and their Motion at a Manganite Surface
Manganites are technologically important materials, used widely as solid
oxide fuel cell cathodes: they have also been shown to exhibit
electroresistance. Oxygen bulk diffusion and surface exchange processes are
critical for catalytic action, and numerous studies of manganites have linked
electroresistance to electrochemical oxygen migration. Direct imaging of
individual oxygen defects is needed to underpin understanding of these
important processes. It is not currently possible to collect the required
images in the bulk, but scanning tunnelling microscopy could provide such data
for surfaces. Here we show the first atomic resolution images of oxygen defects
at a manganite surface. Our experiments also reveal defect dynamics, including
oxygen adatom migration, vacancy-adatom recombination and adatom bistability.
Beyond providing an experimental basis for testing models describing the
microscopics of oxygen migration at transition metal oxide interfaces, our work
resolves the long-standing puzzle of why scanning tunnelling microscopy is more
challenging for layered manganites than for cuprates.Comment: 7 figure
STM induced hydrogen desorption via a hole resonance
We report STM-induced desorption of H from Si(100)-H(2) at negative
sample bias. The desorption rate exhibits a power-law dependence on current and
a maximum desorption rate at -7 V. The desorption is explained by vibrational
heating of H due to inelastic scattering of tunneling holes with the Si-H
5 hole resonance. The dependence of desorption rate on current and bias
is analyzed using a novel approach for calculating inelastic scattering, which
includes the effect of the electric field between tip and sample. We show that
the maximum desorption rate at -7 V is due to a maximum fraction of
inelastically scattered electrons at the onset of the field emission regime.Comment: 4 pages, 4 figures. To appear in Phys. Rev. Let
Split-off dimer defects on the Si(001)2x1 surface
Dimer vacancy (DV) defect complexes in the Si(001)2x1 surface were
investigated using high-resolution scanning tunneling microscopy and first
principles calculations. We find that under low bias filled-state tunneling
conditions, isolated 'split-off' dimers in these defect complexes are imaged as
pairs of protrusions while the surrounding Si surface dimers appear as the
usual 'bean-shaped' protrusions. We attribute this to the formation of pi-bonds
between the two atoms of the split-off dimer and second layer atoms, and
present charge density plots to support this assignment. We observe a local
brightness enhancement due to strain for different DV complexes and provide the
first experimental confirmation of an earlier prediction that the 1+2-DV
induces less surface strain than other DV complexes. Finally, we present a
previously unreported triangular shaped split-off dimer defect complex that
exists at SB-type step edges, and propose a structure for this defect involving
a bound Si monomer.Comment: 8 pages, 7 figures, submitted to Phys. Rev.
Field-Induced Deformation as a Mechanism for Scanning Tunneling Microscopy Based Nanofabrication
Increased energy expenditure and carbohydrate oxydation in post-obese women on a high-carbohydrate diet. Mediation by the sympathetic nervous system
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