Investigation of the epitaxial growth of AIIIBV-N heterostructures for solar cell applications

The InGaAsN/GaAs heterostructures proposed in 1996 by Kondow et al. have been successfully used in telecom laser constructions on GaAs substrate. Additionally, the InGaAsN with a bandgap of 1 eV are lattice matched to both GaAs and Ge for the nitrogen and indium contents of around 3 % and 9 %, respectively. These features make this semiconductor an ideal candidate for high-efficiency multijunction solar cells (MJSCs) based on the Ge/InGaAsN/GaAs/InGaP structure. The growth technology of the GaAsN alloy-based diluted nitrides is very difficult because of the large miscibility gap between GaAs and GaN. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2097

GaInNas/GaAs QW Based Structures to Compensate Parasitic Effect of Quantum-Confined Stark Effect in Photodetector Applications

The inhomogeneities of multicomponent semiconductor alloys, as well as phase segregation, can be utilized for enhancement of photodetector absorption properties and thus its efficiency. In this paper, the influence of external electric field on the probability of light absorption in the GaInNAs quantum well is discussed. Both phenomenon: indium and nitrogen composition gradient as well as step-like quantum well are applied to design the QW with compensation of the Quantum-Confined Stark Effect (QCSE) Parasitic effect of QCSE results from decrease of the wave functions overlapping in the QWs placed in reverse biased junction, which finally decrease the efficiency of the photodetector

AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell

Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds and alloys are the most effective photovoltaic devices. Record efficiency of the MJSCs exceeds 44% under concentrated sunlight. Individual subcells connected in series by tunnel junctions are crucial components of these devices. In this paper we present atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) of InGaAsN based subcell for InGaAsN/GaAs tandem solar cell. The parameters of epitaxial structure (optical and electrical), fabrication process of the test solar cell devices and current-voltage (J-V) characteristics are presented and discussed

DLTS Investigations of (Ga,In)(N,As)/GaAs Quantum Wells before and after Rapid Thermal Annealing

Deep level transient spectroscopy was used to investigate deep-level defects in (Ga,In)(N,As)/GaAs triple quantum well structures grown by atmospheric pressure metalorganic vapor phase epitaxy with different indium and nitrogen contents and annealed in rapid thermal annealing system. A combination of electron traps that disappear or remain on annealing and a new hole trap that appears on annealing were detected. The revealed electron traps were attributed to N-related complexes or GaAs host-related native point defects. Moreover, it was suggested that the new hole trap observed in the annealed GaAsN/GaAs triple quantum well structure together with the dominant electron trap can act as generation-recombination center responsible for the observed a very poor optical quality among all the investigated multi-quantum well structures