Detection of beet soil-borne virus and beet virus Q in sugarbeet in Greece

Sugar beet plants with typical rhizomania symptoms were collected from the five major cultivation zones of Greece. The presence of Beet necrotic yellow vein virus (BNYVV), the primary causal agent of the disease, was ascertained by DAS-ELISA in 38 out of 40 fields surveyed and the positive samples were subsequently examined for the presence of other soil-borne viruses which are frequently associated with rhizomania, using a multiplex RT-PCR assay targeting BNYVV, Beet soilborne virus (BSBV) and Beet virus Q (BVQ). The occurrence of BSBV and BVQ was confirmed in 9 and 23 rhizomania-infected fields, respectively. In contrast to surveys conducted in other countries, the presence of BVQ prevailed throughout Greece in dual infections with BNYVV, whereas BSBV was restricted to rhizomania-infected fields from only two sugarbeet cultivation areas. Nine of the samples tested were infected with all three viruses. BSBV was always found in triple infections. To our knowledge, this is the first report of BSBV and BVQ in Greece. The future assessment of the impact of each of these viruses on sugarbeet could prove significant for bleeding objectives in terms of achieving a more durable resistance to the rhizomania syndrome

Spin-dependent transport in metal/semiconductor tunnel junctions

This paper describes a model as well as experiments on spin-polarized tunnelling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to generate spin-polarized carriers. A transport model is presented that takes account of carrier capture in the semiconductor surface states, and describes the semiconductor surface in terms of a spin-dependent energy distribution function. The so-called surface spin-splitting can be calculated from the balance of the polarized electron and hole flow in the semiconductor subsurface region, the polarized tunnelling current across the tunnel barrier between the magnetic material and the semiconductor surface, and the spin relaxation at the semiconductor surface. Measurements are presented of the circular-polarization-dependent photocurrent (the so-called helicity asymmetry) in thin-film tunnel junctions of Co/Al2O3/GaAs. In the absence of a tunnel barrier, the helicity asymmetry is caused by magneto-optical effects (magnetic circular dichroism). In the case where a tunnel barrier is present, the data cannot be explained by magneto-optical effects alone; the deviations provide evidence that spin-polarized tunnelling due to optical spin orientation occurs. In Co/τ-MnAl/AlAs/GaAs junctions no deviations from the magneto-optical effects are observed, most probably due to the weak spin polarization of τ-MnAl along the tunnelling direction; the latter is corroborated by bandstructure calculations. Finally, the application of photoexcited GaAs for spin-polarized tunnelling in a scanning tunnelling microscope is discussed.

Dependence of the Frequency of the Kilohertz Quasi-Periodic Oscillations on X-ray Count Rate and Colors in 4U 1608-52

We present new results based on observations carried out with the Rossi X-ray Timing Explorer during the decay of an outburst of the low-mass X-ray binary (LMXB) and atoll source 4U 1608-52. Our results appear to resolve, at least in 4U 1608-52, one of the long-standing issues about the phenomenology of the kilohertz quasi-periodic oscillations (kHz QPOs), namely, the lack of a unique relation between the frequency of the kHz QPOs and the X-ray flux. We show that despite its complex dependence on the X-ray flux, the frequency of the kHz QPOs is monotonically related to the position of the source in the color-color diagram. Our findings strengthen the idea that, as in the case of Z sources, in the atoll sources the X-ray flux is not a good indicator of $\dot M$, and that the observed changes in the frequency of the kHz QPOs in LMXBs are driven by changes in $\dot M$. These results raise some concern about the recently reported detection of the orbital frequency at the innermost stable orbit in 4U 1820-30.Comment: Accepted for publication in The Astrophysical Journal Letters. Uses AAS LaTex v4.0 (5 pages plus 4 postscript figures

Patterns of genomic and phenomic diversity in wine and table grapes.

Grapes are one of the most economically and culturally important crops worldwide, and they have been bred for both winemaking and fresh consumption. Here we evaluate patterns of diversity across 33 phenotypes collected over a 17-year period from 580 table and wine grape accessions that belong to one of the world's largest grape gene banks, the grape germplasm collection of the United States Department of Agriculture. We find that phenological events throughout the growing season are correlated, and quantify the marked difference in size between table and wine grapes. By pairing publicly available historical phenotype data with genome-wide polymorphism data, we identify large effect loci controlling traits that have been targeted during domestication and breeding, including hermaphroditism, lighter skin pigmentation and muscat aroma. Breeding for larger berries in table grapes was traditionally concentrated in geographic regions where Islam predominates and alcohol was prohibited, whereas wine grapes retained the ancestral smaller size that is more desirable for winemaking in predominantly Christian regions. We uncover a novel locus with a suggestive association with berry size that harbors a signature of positive selection for larger berries. Our results suggest that religious rules concerning alcohol consumption have had a marked impact on patterns of phenomic and genomic diversity in grapes

Unified description of ballistic and diffusive carrier transport in semiconductor structures

A unified theoretical description of ballistic and diffusive carrier transport in parallel-plane semiconductor structures is developed within the semiclassical model. The approach is based on the introduction of a thermo-ballistic current consisting of carriers which move ballistically in the electric field provided by the band edge potential, and are thermalized at certain randomly distributed equilibration points by coupling to the background of impurity atoms and carriers in equilibrium. The sum of the thermo-ballistic and background currents is conserved, and is identified with the physical current. The current-voltage characteristic for nondegenerate systems and the zero-bias conductance for degenerate systems are expressed in terms of a reduced resistance. For arbitrary mean free path and arbitrary shape of the band edge potential profile, this quantity is determined from the solution of an integral equation, which also provides the quasi-Fermi level and the thermo-ballistic current. To illustrate the formalism, a number of simple examples are considered explicitly. The present work is compared with previous attempts towards a unified description of ballistic and diffusive transport.Comment: 23 pages, 10 figures, REVTEX