Bond formation at polycarbonate | X interfaces (X = Al2_2O3_3, TiO2_2, TiAlO2_2) studied by theory and experiments

Interfacial bond formation during sputter deposition of metal oxide thin films onto polycarbonate (PC) is investigated by ab initio molecular dynamics simulations and X-ray photoelectron spectroscopy (XPS) analysis of PC | X interfaces (X = Al$_2$O$_3$, TiO$_2$, TiAlO$_2$). Generally, the predicted bond formation is consistent with the experimental data. For all three interfaces, the majority of bonds identified by XPS are (C-O)-metal bonds, whereas C-metal bonds are the minority. Compared to the PC | Al$_2$O$_3$ interface, the PC | TiO$_2$ and PC | TiAlO$_2$ interfaces exhibit a reduction in the measured interfacial bond density by ~ 75 and ~ 65%, respectively. Multiplying the predicted bond strength with the corresponding experimentally determined interfacial bond density shows that Al$_2$O$_3$ exhibits the strongest interface with PC, while TiO$_2$ and TiAlO$_2$ exhibit ~ 70 and ~ 60% weaker interfaces, respectively. This can be understood by considering the complex interplay between the metal oxide composition, the bond strength as well as the population of bonds that are formed across the interface

Ab Initio Guided Low Temperature Synthesis Strategy for Smooth Face-Centred Cubic FeMn Thin Films

The sputter deposition of FeMn thin films with thicknesses in the range of hundred nanometres and beyond requires relatively high growth temperatures for the formation of the face-centred cubic (fcc) phase, which results in high thin film roughness. A low temperature synthesis strategy, based on local epitaxial growth of a 100 nm thick fcc FeMn film as well as a Cu nucleation layer on an α-Al2O3 substrate at 160 °C, enables roughness values (Ra) as low as ~0.6 nm, which is in the same order of magnitude as the pristine substrate (~0.1 nm). The synthesis strategy is guided by ab initio calculations, indicating very strong interfacial bonding of the Cu nucleation layer to an α-Al2O3 substrate (work of separation 5.48 J/m²)—which can be understood based on the high Cu coordination at the interface—and between fcc FeMn and Cu (3.45 J/m²). Accompanied by small lattice misfits between these structures, the strong interfacial bonding is proposed to enable the local epitaxial growth of a smooth fcc FeMn thin film. Based on the here introduced synthesis strategy, the implementation of fcc FeMn based thin film model systems for materials with interface dominated properties such as FeMn steels containing κ-carbide precipitates or secondary phases appears meaningful

On atomic mechanisms governing the oxidation of Bi2 Te3

Oxidation of Bi2Te3 (space group R (3) over barm) has been investigated using experimental and theoretical means. Based on calorimetry, x-ray photoelectron spectroscopy and thermodynamic modelling, Bi2Te3 is at equilibrium with Bi2O3 and TeO2, whereby the most stable compound is Bi2Te3, followed by Bi2O3. The reactivity of Bi towards oxygen is expected to be higher than that of Te. This notion is supported by density functional theory. The strongest bond is formed between Bi and Te, followed by Bi-O. This gives rise to unanticipated atomic processes. Dissociatively adsorbed oxygen diffuses through Bi and Te basal planes of Bi2Te3(0 0 0 1) and preferably interacts with Bi. The Te termination considerably retards this process. These findings may clarify conflicting literature data. Any basal plane off-cut or Bi terminations trigger oxidation, but a perfect basal cleavage, where only Te terminations are exposed to air, may be stable for a longer period of time. These results are of relevance for applications in which surfaces are of key importance, such as nanostructured Bi2Te3 thermoelectric devices

Effect of Si on the hydrogen-based direct reduction of Fe2O3 studied by XPS of sputter-deposited thin-film model systems

Understanding the effect of gangue elements is of critical importance to optimize the efficiency of hydrogen -based direct reduction (HyDR) of iron ore, as one of the key steps towards climate-neutral steel production. Here, we demonstrate on the example of Si-doped Fe2O3, how thin films can be effectively utilized as a model system to facilitate systematic investigation of the solid-state reduction behavior. In-vacuo X-ray photoelectron spectroscopy (XPS) is used to probe the reduction kinetics by analyzing the chemical state of iron oxide thin films before and after annealing at 700 degrees C in an Ar+5%H2 atmosphere. It is demonstrated that even low Si concen-trations of 3.7 at.% inhibit the HyDR of Fe2O3 by the formation of a SiOx-enriched reduction barrier in the surface-near region

Ag Surface and Bulk Segregations in Sputtered ZrCuAlNi Metallic Glass Thin Films

We report on the formation of Ag-containing ZrCuAlNi thin film metallic glass (nano)composites by a hybrid direct-current magnetron sputtering and high-power pulsed magnetron sputtering process. The effects of Ag content, substrate temperature and substrate bias potential on the phase formation and morphology of the nanocomposites were investigated. While applying a substrate bias potential did not strongly affect the morphological evolution of the films, the Ag content dictated the size and distribution of Ag surface segregations. The films deposited at low temperatures were characterized by strong surface segregations, formed by coalescence and Ostwald ripening, while the volume of the films remained featureless. At higher deposition temperature, elongated Ag segregations were observed in the bulk and a continuous Ag layer was formed at the surface as a result of thermally enhanced surface diffusion. While microstructural observations have allowed identifying both surface and bulk segregations, an indirect method for detecting the presence of Ag segregations is proposed, by measuring the electrical resistivity of the films