A Self Triggered Amplifier/Digitizer Chip for CBM

The development of front-end electronics for the planned CBM experiment at FAIR/GSI is in full progress. For charge readout of the various sub-detectors a new self-triggered amplification and digitization chip is being designed and tested. The mixed signal readout chip will have 32-64 channels each containing a low-power/low-noise preamplifier/shaper front-end, an 8-9 bit ADC and a digital post-processing based on a FIR/IIR-filter. The ADC has a pipeline architecture that uses a novel current-mode storage cell as a basic building block. The current prototype provides 26 different parametrized preamplifier/shaper/discriminator channels, 8 pipeline ADCs, a readout shift register matrix and a synthesized redundant signed binary (RSD) decoder

X-ray characterization of BUSARD chip: A HV-SOI monolithic particle detector with pixel sensors under the buried oxide

This work presents the design of BUSARD, an application specific integrated circuit (ASIC) for the detection of ionizing particles. The ASIC is a monolithic active pixel sensor which has been fabricated in a High-Voltage Silicon-On-Insulator (HV-SOI) process that allows the fabrication of a buried N+ diffusion below the Buried OXide (BOX) as a standard processing step. The first version of the chip, BUSARD-A, takes advantage of this buried diffusion as an ionizing particle sensor. It includes a small array of 13×13 pixels, with a pitch of 80 μm, and each pixel has one buried diffusion with a charge amplifier, discriminator with offset tuning and digital processing. The detector has several operation modes including particle counting and Time-over-Threshold (ToT). An initial X-ray characterization of the detector was carried out, obtaining several pulse height and ToT spectra, which then were used to perform the energy calibration of the device. The Molybdenum $_{α}$ emission was measured with a standard deviation of 127 e$^{-}$ of ENC by using the analog pulse output, and with 276 e$^{-}$ of ENC by using the ToT digital output. The resolution in ToT mode is dominated by the pixel-to-pixel variation

Susceptibility of red flour beetle Tribolium castaneum (Herbst) populations from Serbia to contact insecticides

Contact insecticides remain the principal option for controlling stored-product insects. Unsatisfactory results of insecticide applications are caused by several factors, one of the most important being resistance of stored-product insects. The objective of this study was to examine the susceptibility in several populations of red flour beetle Tribolium castaneum (Herbst) from Serbia to different contact insecticides. Toxicity of the insecticides dichlorvos, malathion, chlorpyrifos-methyl, pirimiphos-methyl, deltamethrin and bifenthrin to adults of a laboratory population of T. castaneum was investigated in the laboratory by topical application. At the LD50, deltamethrin was the most toxic and malathion the least toxic of the insecticides. Discriminating dose data for the laboratory population were used to test the susceptibility of 10 other populations originating from different storage facilities (silos, warehouses and flour mills) in Serbia. The discriminating dose of malathion caused mortality of up to 85% in seven populations, indicating malathion resistance in those populations. For two populations of T. castaneum from Nikinci and Jakovo LD values, ld-p lines and levels of susceptibility/resistance (RRs) were determined. The most toxic insecticide for adults from Nikinci and Jakovo was deltamethrin, while malathion was least toxic. The resistance ratios (RRs) for malathion at the LD50 were 17.6 for beetles from Nikinci, and 26.0 for beetles from Jakovo. Keywords: Tribolium castaneum adults; Different populations; Insecticide toxicity; Susceptibility resistanc

Survey of the family Russulaceae (Agaricomycetes, Fungi) in Montenegro

The paper shows that there are 84 known species of the family Russulaceae in Montenegro, 39 of them belonging to the genus Lactarius and 45 to the genus Russula

Design of Fixed Bed Column for Lead Removal on Natural Zeolite Based on Batch Studies

This paper presents the prediction of breakthrough curves for the fixed bed column based on batch studies. Batch equilibrium studies of lead removal on natural zeolite clinoptilolite have been performed. The obtained experimental data have been tested according to the Langmuir and the Freundlich isotherm, and their parameters have been calculated. These parameters and the Mass Transfer Model have been used to predict theoretical breakthrough curves. Theoretical breakthrough curves have been compared with the experimental ones and good agreement has been observed. This indicates that the Mass Transfer Model is applicable for prediction of breakthrough curves from batch studies. The overall mass transfer coefficient has been calculated from column experiments. This value allows for calculation of the height of the mass transfer zone as a very important parameter necessary for column design

Characterisation of AMS H35 HV-CMOS monolithic active pixel sensor prototypes for HEP applications

Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when large areas to be covered and material budget are concerned. This is the case of the outermost pixel layers of the future ATLAS tracking detector for the HL-LHC. For experiments at hadron colliders, radiation hardness is a key requirement which is not fulfilled by standard CMOS sensor designs that collect charge by diffusion. This issue has been addressed by depleted active pixel sensors in which electronics are embedded into a large deep implantation ensuring uniform charge collection by drift. Very first small prototypes of hybrid depleted active pixel sensors have already shown a radiation hardness compatible with the ATLAS requirements. Nevertheless, to compete with the present hybrid solutions a further reduction in costs achievable by a fully monolithic design is desirable. The H35DEMO is a large electrode full reticle demonstrator chip produced in AMS 350 nm HV-CMOS technology by the collaboration of Karlsruher Institut f\"ur Technologie (KIT), Institut de F\'isica d'Altes Energies (IFAE), University of Liverpool and University of Geneva. It includes two large monolithic pixel matrices which can be operated standalone. One of these two matrices has been characterised at beam test before and after irradiation with protons and neutrons. Results demonstrated the feasibility of producing radiation hard large area fully monolithic pixel sensors in HV-CMOS technology. H35DEMO chips with a substrate resistivity of 200$\Omega$ cm irradiated with neutrons showed a radiation hardness up to a fluence of $10^{15}$n$_{eq}$cm$^{-2}$ with a hit efficiency of about 99% and a noise occupancy lower than $10^{-6}$ hits in a LHC bunch crossing of 25ns at 150V

Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm

High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on the 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18 process, features a fully integrated on-chip readout, i.e. hit-digitization, zero suppression and data serialization. It is the first fully monolithic HV-CMOS pixel sensor that has been tested for the use in high irradiation environments like HL-LHC. We present results from laboratory and test beam measurements of MuPix7 prototypes irradiated with neutrons (up to $5.0\cdot10^{15}{\,\rm{n}_{\rm{eq}}/cm^2}$) and protons (up to $7.8\cdot 10^{15} \,\rm{protons}/cm^2$) and compare the performance with non-irradiated sensors. Efficiencies well above 90 % at noise rates below 200 Hz per pixel are measured. A time resolution better than 22 ns is measured for all tested settings and sensors, even at the highest irradiation fluences. The data transmission at 1.25 Gbit/s and the on-chip PLL remain fully functional