Construction of surfaces by discrete variational splines with parallelism conditions

AbstractWe present in this paper a discrete problem of constructing some parametric surfaces with parallelism conditions from some given Lagrangean data. We consider the problem of fitting some scattered points with a surface pseudo-parallel to a given reference surface in a finite element space. Some convergence results are shown. Finally, we analyze some graphical examples in order to prove the validity and the effectiveness of this method

Two-dimensional tellurium-based diodes for RF applications

The research of two-dimensional (2D) Tellurium (Te) or tellurene is thriving to address current challenges in emerging thin-film electronic and optoelectronic devices. However, the study of 2D-Te-based devices for high-frequency applications is still lacking in the literature. This work presents a comprehensive study of two types of radio frequency (RF) diodes based on 2D-Te flakes and exploits their distinct properties in two RF applications. First, a metal-insulator-semiconductor (MIS) structure is employed as a nonlinear device in a passive RF mixer, where the achieved conversion loss at 2.5 GHz and 5 GHz is as low as 24 dB and 29 dB, respectively. Then, a metal-semiconductor (MS) diode is tested as a zero-bias millimeter-wave power detector and reaches an outstanding linear-in-dB dynamic range over 40 dB, while having voltage responsivities as high as 257 V ⋅ W−1 at 1 GHz (up to 1 V detected output voltage) and 47 V ⋅ W−1 at 2.5 GHz (up to 0.26 V detected output voltage). These results show superior performance compared to other 2D material-based devices in a much more mature technological phase. Thus, the authors believe that this work demonstrates the potential of 2D-Te as a promising material for devices in emerging high-frequency electronics.MCIN/AEI/10.13039/501100011033European Union NextGenerationEU/PRTRGerman Research Foundation (DFG) under the projects GLECS2 (No. 653408)MOSTFLEX (653414),The Natural Sciences and Engineering Research Council (NSERC) (RGPIN-2017-05810 and ALLRP 577611-22)The European Commission under the Horizon 2020 projects Graphene Flagship (No. 785219 and 881603)PAIDI 2020 and European Social Fund Operational Programme 2014-2020 no. 20804Ministerio de UniversidadesGrant no. CAS21/ 00483Canada Foundation for Innovation (CFI)British Columbia Knowledge Development Fund (BCKDF)Western Economic Diversification Canada (WD)Simon Fraser Universit

Optimal Centers’ Allocation in Smoothing or Interpolating with Radial Basis Functions

This work was supported by FEDER/Junta de Andalucía-Consejería de Transformación Económica, Industria, Conocimiento y Universidades (Research Project A-FQM-76-UGR20, University of Granada) and by the Junta de Andalucía (Research Group FQM191).Function interpolation and approximation are classical problems of vital importance in many science/engineering areas and communities. In this paper, we propose a powerful methodology for the optimal placement of centers, when approximating or interpolating a curve or surface to a data set, using a base of functions of radial type. In fact, we chose a radial basis function under tension (RBFT), depending on a positive parameter, that also provides a convenient way to control the behavior of the corresponding interpolation or approximation method. We, therefore, propose a new technique, based on multi-objective genetic algorithms, to optimize both the number of centers of the base of radial functions and their optimal placement. To achieve this goal, we use a methodology based on an appropriate modification of a non-dominated genetic classification algorithm (of type NSGA-II). In our approach, the additional goal of maintaining the number of centers as small as possible was also taken into consideration. The good behavior and efficiency of the algorithm presented were tested using different experimental results, at least for functions of one independent variable.Junta de Andalucía-Consejería de Transformación Econímica, Industria, Conocimiento y Universidades A-FQM-76-UGR20Universidad de GranadaEuropean Regional Development FundJunta de Andalucía FQM19

Radio frequency performance projection and stability trade-off of h-BN encapsulated graphene field-effect transistors

Hexagonal boron nitride (h-BN) encapsulation significantly improves carrier transport in graphene. This work investigates the benefit of implementing the encapsulation technique in graphene field-effect transistors (GFET) in terms of their radio frequency (RF) performance. For such a purpose, a drift-diffusion self-consistent simulator is prepared to get the GFET electrical characteristics. Both the mobility and saturation velocity information are obtained by means of an ensemble Monte Carlo simulator upon considering the relevant scattering mechanisms that affect carrier transport. RF figures of merit are simulated using an accurate small-signal model that includes non-reciprocal capacitances. Results reveal that the cutoff frequency could scale up to the physical limit given by the inverse of the transit time. Projected maximum oscillation frequencies, in the order of few THz, are expected to exceed the values demonstrated by InP and Si based RF transistors. The existing trade-off between power gain and stability and the role played by the gate resistance are also studied. High power gain and stability are feasible even if the device is operated far away from current saturation. Finally, the benefits of device unilateralization and the exploitation of the negative differential resistance region to get negative-resistance gain are discussed.Comment: 18 pages, 9 figure

Radio frequency performance projection and stability tradeoff of h-BN encapsulated graphene field-effect transistors

Hexagonal boron nitride encapsulation significantly improves carrier transport in graphene. This paper investigates the benefit of implementing the encapsulation technique in graphene field-effect transistors (GFETs) in terms of their intrinsic radio frequency (RF) performance, adding the effect of the series resistances at the terminals. For such a purpose, a drift-diffusion self-consistent simulator is prepared to get the GFET electrical characteristics. Both the mobility and saturation velocity are obtained by an ensemble Monte Carlo simulator upon considering the relevant scattering mechanisms that affect carrier transport. RF figures of merit are simulated using an accurate small-signal model. Results reveal that the cutoff frequency could scale up to the physical limit given by the inverse of the transit time. Projected maximum oscillation frequencies, in the order of few terahertz, are expected to exceed the values demonstrated by InP and Si-based RF transistors. The existing tradeoff between power gain and stability and the role played by the gate resistance are also studied. High power gain and stability are feasible even if the device is operated far away from current saturation. Finally, the benefits of device unilateralization and the exploitation of the negative differential resistance region to get negative-resistance gain are discussed

Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor

The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with channel length scaling can be exploited in graphene field effect transistors (GFETs) to get a competitive radio frequency (RF) performance. Carrier mobility and saturation velocity were obtained from an ensemble Monte Carlo simulator that accounted for the relevant scattering mechanisms (intrinsic phonons, scattering with impurities and defects, etc.). This information is fed into a self consistent simulator, which solves the drift diffusion equation coupled with the two dimensional Poisson's equation to take full account of short channel effects. Simulated GFET characteristics were benchmarked against experimental data from our fabricated devices. Our simulations show that scalability is supposed to bring to RF performance an improvement that is, however, highly limited by instability. Despite the possibility of a lower performance, a careful choice of the bias point can avoid instability. Nevertheless, maximum oscillation frequencies are still achievable in the THz region for channel lengths of a few hundreds of nanometers.Comment: 29 pages, 7 figures, 1 table, Supplementary Information (10 pages) Funded by: 1 Micronova Nanofabrication Centre 2 European Union's Horizon 2020 (696656) 3 MINECO (TEC2013-42622-R, TEC2015-67462-C2-1-R, TEC2016-80839-P, MINECO/FEDER, FJCI-2014-19643) 4 MECD (CAS16/00043) 5 Generalitat de Catalunya (2014 SGR 384

p53 rapidly restructures 3D chromatin organization to trigger a transcriptional response

Activation of the p53 tumor suppressor triggers a transcriptional program to control cellular response to stress. However, the molecular mechanisms by which p53 controls gene transcription are not completely understood. Here, we uncover the critical role of spatio-temporal genome architecture in this process. We demonstrate that p53 drives direct and indirect changes in genome compartments, topologically associating domains, and DNA loops prior to one hour of its activation, which escort the p53 transcriptional program. Focusing on p53-bound enhancers, we report 340 genes directly regulated by p53 over a median distance of 116 kb, with 74% of these genes not previously identified. Finally, we showcase that p53 controls transcription of distal genes through newly formed and pre-existing enhancer-promoter loops in a cohesin dependent manner. Collectively, our findings demonstrate a previously unappreciated architectural role of p53 as regulator at distinct topological layers and provide a reliable set of new p53 direct target genes that may help designs of cancer therapies

The HDAC7-TET2 epigenetic axis is essential during early B lymphocyte development

Correct B cell identity at each stage of cellular differentiation during B lymphocyte development is critically dependent on a tightly controlled epigenomic landscape. We previously identified HDAC7 as an essential regulator of early B cell development and its absence leads to a drastic block at the pro-B to pre-B cell transition. More recently, we demonstrated that HDAC7 loss in pro-B-ALL in infants associates with a worse prognosis. Here we delineate the molecular mechanisms by which HDAC7 modulates early B cell development. We find that HDAC7 deficiency drives global chromatin de-condensation, histone marks deposition and deregulates other epigenetic regulators and mobile elements. Specifically, the absence of HDAC7 induces TET2 expression, which promotes DNA 5-hydroxymethylation and chromatin de-condensation. HDAC7 deficiency also results in the aberrant expression of microRNAs and LINE-1 transposable elements. These findings shed light on the mechanisms by which HDAC7 loss or misregulation may lead to B cell-based hematological malignancies.FUNDING: Spanish Ministry of Economy and Competitiveness (MINECO) [SAF2017-87990-R]; Spanish Ministry of Science and Innovation (MICINN) [EUR2019-103835]; Josep Carreras Leukaemia Research Institute (IJC, Badalona, Barcelona); IDIBELL Research Institute (L’Hospitalet de Llobregat, Barcelona); A.M. is funded by the Spanish Ministry of Science, Innovation and Universities, which is part of the Agencia Estatal de Investigacion (AEI) [PRE2018-083183] (cofunded by the European Social Fund]; OdB. was funded by a Juan de la Cierva Formacion Fellowship from the Spanish Ministry of Science, Innovation and Universities [FJCI-2017-32430]; Postdoctoral Fellowship from the Asociacion Española Contra el Cáncer (AECC) ´ Foundation [POSTD20024DEBA]; B.M. is awardee of the Ayudas para la formacion del profesorado universitario [FPU18/00755, Ministerio de Universidades]; B.M.J. is funded by La Caixa Banking Foundation Junior Leader project [LCF/BQ/PI19/11690001]; FEDER/Spanish Ministry of Science and Innovation [RTI2018-094788-A-I00]; L.T.-D. is funded by the FPI Fellowship [PRE2019- 088005]; L.R. is funded by an AGAUR FI fellowship [2019FI-B00017]; J.L.S. is funded by ISCIII [CP19/00176], co-funded by ESF, ‘Investing in your future’ and the Spanish Ministry of Science, Innovation and Universities [PID2019-111243RA-I00]. CRG acknowledge the support of the Spanish Ministry of Science and Innovation through the Centro de Excelencia Severo Ochoa (CEX2020-001049- S, MCIN/AEI /10.13039/501100011033). Funding for open access charge: Spanish Ministry of Science, Innovation and Universities (MICIU) [SAF2017-87990-R, EUR2019-103835].ACKNOWLEDGEMENTS: We thank CERCA Programme/Generalitat de Catalunya and the Josep Carreras Foundation for institutional support. We thank Dr Eric Olson (UT Southwestern Medical Center, Dallas, TX, USA) and Dr Michael Reth (Max Planck Institute of Immunology and Epigenetics, Freiburg, Germany) for kindly providing the Hdac7loxp/- and mb1- Cre mice, respectively. We thank Luc´ıa Fanlo for her assistance in technical issues and bioinformatics analysis of ChIP-seq and ATAC-seq experiments. We thank Alberto Bueno for deep analysis of our RNA-seq and hMeDIP-seq data, in order to assess the presence of differentially expressed dsRNA species. We also thank Drs Pura Munoz ˜ Canoves and Tokameh Mahmoudi for helpful comments on ´ the manuscript