Lateral piezoelectric response across ferroelectric domain walls in thin films

In purely c-axis oriented PbZr$_{0.2}$Ti$_{0.8}$O$_3$ ferroelectric thin films, a lateral piezoresponse force microscopy signal is observed at the position of 180{\deg}domain walls, where the out-of-plane oriented polarization is reversed. Using electric force microscopy measurements we exclude electrostatic effects as the origin of this signal. Moreover, our mechanical simulations of the tip/cantilever system show that the small tilt of the surface at the domain wall below the tip does not satisfactorily explain the observed signal either. We thus attribute this lateral piezoresponse at domain walls to their sideways motion (shear) under the applied electric field. From simple elastic considerations and the conservation of volume of the unit cell, we would expect a similar lateral signal more generally in other ferroelectric materials, and for all types of domain walls in which the out-of-plane component of the polarization is reversed through the domain wall. We show that in BiFeO$_3$ thin films, with 180, 109 and 71{\deg}domain walls, this is indeed the case.Comment: 31 pages, 10 figures. to appear in J. Appl. Phys. Special topic: invited papers from the international symposium on piezoresponse force microscopy and nanoscale phenomena in polar materials. Aveiro - portugal 200

Domain wall roughness in epitaxial ferroelectric PbZr0.2Ti0.8O3 thin films

The static configuration of ferroelectric domain walls was investigated using atomic force microscopy on epitaxial PbZr0.2Ti0.8O3 thin films. Measurements of domain wall roughness reveal a power law growth of the correlation function of relative displacements B(L) ~ L^(2zeta) with zeta ~ 0.26 at short length scales L, followed by an apparent saturation at large L. In the same films, the dynamic exponent mu was found to be ~ 0.6 from independent measurements of domain wall creep. These results give an effective domain wall dimensionality of d=2.5, in good agreement with theoretical calculations for a two-dimensional elastic interface in the presence of random-bond disorder and long range dipolar interactions.Comment: 5 pages, 4 figure

Multiscaling analysis of ferroelectric domain wall roughness

Using multiscaling analysis, we compare the characteristic roughening of ferroelectric domain walls in PZT thin films with numerical simulations of weakly pinned one-dimensional interfaces. Although at length scales up to a length scale greater or equal to 5 microns the ferroelectric domain walls behave similarly to the numerical interfaces, showing a simple mono-affine scaling (with a well-defined roughness exponent), we demonstrate more complex scaling at higher length scales, making the walls globally multi-affine (varying roughness exponent at different observation length scales). The dominant contributions to this multi-affine scaling appear to be very localized variations in the disorder potential, possibly related to dislocation defects present in the substrate.Comment: 5 pages, 4 figure

Fractal dimension and size scaling of domains in thin films of multiferroic BiFeO3

We have analyzed the morphology of ferroelectric domains in very thin films of multiferroic BiFeO3. Unlike the more common stripe domains observed in thicker films BiFeO3 or in other ferroics, the domains tend not to be straight, but irregular in shape, with significant domain wall roughening leading to a fractal dimensionality. Also contrary to what is usually observed in other ferroics, the domain size appears not to scale as the square root of the film thickness. A model is proposed in which the observed domain size as a function of film thickness can be directly linked to the fractal dimension of the domains.Comment: 4 pages, 3 figure

Shear effects in lateral piezoresponse force microscopy at 180∘^\circ ferroelectric domain walls

In studies using piezoresponse force microscopy, we observe a non-zero lateral piezoresponse at 180$^\circ$ domain walls in out-of-plane polarized, c-axis-oriented tetragonal ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ epitaxial thin films. We attribute these observations to a shear strain effect linked to the sign change of the $d_{33}$ piezoelectric coefficient through the domain wall, in agreement with theoretical predictions. We show that in monoclinically distorted tetragonal BiFeO$_3$ films, this effect is superimposed on the lateral piezoresponse due to actual in-plane polarization, and has to be taken into account in order to correctly interpret the ferroelectric domain configuration.Comment: 4 pages, 3 figure

Sputtering of benzene sample by large Ne, Ar and Kr clusters : molecular dynamics computer simulations

Molecular dynamics simulations are employed to probe the role of an impact angle on emission efficiency of organic molecules sputtered from benzene crystal bombarded by 15 keV $Ne_{2953}$, $Ar_{2953}$, and $Kr_{2953}$ clusters. It is found that both the cluster type and the angle of incidence have significant effect on the emission efficiency. The shape of the impact angle dependence does not resemble the dependence characteristic for medium size clusters ($C_{60}, Ar_{366}$), where sputtering yield only moderately increases with the impact angle, has a shallow maximum around 40° and then decreases. On the contrary, for the large projectiles ($Ne_{2953}, Ar_{2953}$, and $Kr_{2953}$) the emission efficiency steeply increases with the impact angle, has a pronounced maximum around 55° followed by rapid signal decay. It has been found that the sputtering yield is the most sensitive to the impact angle change for Kr cluster projectiles, while change of the impact angle of Ne projectile has the smallest effect on the efficiency of material ejection