481 research outputs found
Growth modes of InN (000-1) on GaN buffer layers on sapphire
In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesa-like with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered
Voltage modulated electro-luminescence spectroscopy and negative capacitance - the role of sub-bandgap states in light emitting devices
Voltage modulated electroluminescence spectra and low frequency ({\leq} 100
kHz) impedance characteristics of electroluminescent diodes are studied.
Voltage modulated light emission tracks the onset of observed negative
capacitance at a forward bias level for each modulation frequency. Active
participation of sub-bandgap defect states in minority carrier recombination
dynamics is sought to explain the results. Negative capacitance is understood
as a necessary dielectric response to compensate any irreversible transient
changes in the minority carrier reservoir due to radiative recombinations
mediated by slowly responding sub-bandgap defects. Experimentally measured
variations of the in-phase component of modulated electroluminescence spectra
with forward bias levels and modulation frequencies support the dynamic
influence of these states in the radiative recombination process. Predominant
negative sign of the in-phase component of voltage modulated
electroluminescence signal further confirms the bi-molecular nature of light
emission. We also discuss how these states can actually affect the net density
of minority carriers available for radiative recombination. Results indicate
that these sub-bandgap states can suppress external quantum efficiency of such
devices under high frequency operation commonly used in optical communication.Comment: 21 pages, 4 sets of figure
Optical properties of high quality Cu2ZnSnSe4 thin films
Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectr
Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon
The mechanisms of ripple formation on silicon surface by femtosecond laser
pulses are investigated. We demonstrate the transient evolution of the density
of the excited free-carriers. As a result, the experimental conditions required
for the excitation of surface plasmon polaritons are revealed. The periods of
the resulting structures are then investigated as a function of laser
parameters, such as the angle of incidence, laser fluence, and polarization.
The obtained dependencies provide a way of better control over the properties
of the periodic structures induced by femtosecond laser on the surface of a
semiconductor material.Comment: 11 pages, 8 figures, accepted for publication in Journal of Applied
Physic
Excitation-intensity dependence of shallow and deep-level photoluminescence transitions in semiconductors
Band gap bowing of binary alloys: Experimental results compared to theoretical tight-binding supercell calculations for CdZnSe
Compound semiconductor alloys of the type ABC find widespread applications as
their electronic bulk band gap varies continuously with x, and therefore a
tayloring of the energy gap is possible by variation of the concentration. We
model the electronic properties of such semiconductor alloys by a multiband
tight-binding model on a finite ensemble of supercells and determine the band
gap of the alloy. This treatment allows for an intrinsic reproduction of band
bowing effects as a function of the concentration x and is exact in the
alloy-induced disorder. In the present paper, we concentrate on bulk CdZnSe as
a well-defined model system and give a careful analysis on the proper choice of
the basis set and supercell size, as well as on the necessary number of
realizations. The results are compared to experimental results obtained from
ellipsometric measurements of CdZnSe layers prepared by molecular beam epitaxy
(MBE) and photoluminescence (PL) measurements on catalytically grown CdZnSe
nanowires reported in the literature.Comment: 7 pages, 6 figure
Temperature dependence of the E2h phonon mode of wurtzite GaN/AlN quantum dots
Raman scattering has been used to study the temperature dependence of the frequency and linewidth of the E2h phonon mode of GaN/AlN quantum dot stacks grown on 6H-SiC. The evolution of the nonpolar phonon mode was analyzed in the temperature range from 80 to 655 K for both quantum dots and barrier materials. The experimental results are interpreted by comparison with a model that takes into account symmetric phonon decay and the different thermal expansions of the constituents of the heterostructure. We find a small increase in the anharmonic parameters of the phonon modes in the heterostructure with respect to [email protected]
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Electroluminescence from single nanowires by tunnel injection: an experimental study
We present a hybrid light-emitting diode structure composed of an n-type
gallium nitride nanowire on a p-type silicon substrate in which current is
injected along the length of the nanowire. The device emits ultraviolet light
under both bias polarities. Tunnel-injection of holes from the p-type substrate
(under forward bias) and from the metal (under reverse bias) through thin
native oxide barriers consistently explains the observed electroluminescence
behaviour. This work shows that the standard p-n junction model is generally
not applicable to this kind of device structure.Comment: 6 pages, 6 figure
Band anticrossing in GaNxSb1–x
Fourier transform infrared absorption measurements are presented from the dilute nitride semiconductor GaNSb with nitrogen incorporations between 0.2% and 1.0%. The divergence of transitions from the valence band to E– and E+ can be seen with increasing nitrogen incorporation, consistent with theoretical predictions. The GaNSb band structure has been modeled using a five-band k·p Hamiltonian and a band anticrossing fitting has been obtained using a nitrogen level of 0.78 eV above the valence band maximum and a coupling parameter of 2.6 eV
The EL2 trap in highly doped GaAs:Te
We have investigated highly doped GaAs:Te at different doping concentrations (>10(17) cm(-3)) to assess the presence of the EL2 trap. We have utilized both capacitance and current transient spectroscopy techniques. The crucial parameter for the detection of EL2 is the relative position of the electron quasi-Fermi level in the depletion region. The observed shift of the EL2 apparent activation energy with increasing doping concentration is also discussed
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