Temperature dependent transport characteristics of graphene/n-Si diodes

Realizing an optimal Schottky interface of graphene on Si is challenging, as the electrical transport strongly depends on the graphene quality and the fabrication processes. Such interfaces are of increasing research interest for integration in diverse electronic devices as they are thermally and chemically stable in all environments, unlike standard metal/semiconductor interfaces. We fabricate such interfaces with n-type Si at ambient conditions and find their electrical characteristics to be highly rectifying, with minimal reverse leakage current ($<$10$^{-10}$ A) and rectification of more than $10^6$. We extract Schottky barrier height of 0.69 eV for the exfoliated graphene and 0.83 eV for the CVD graphene devices at room temperature. The temperature dependent electrical characteristics suggest the influence of inhomogeneities at the graphene/n-Si interface. A quantitative analysis of the inhomogeneity in Schottky barrier heights is presented using the potential fluctuation model proposed by Werner and G\"{u}ttler.Comment: 5 pages, 5 figure

Large yield production of high mobility freely suspended graphene electronic devices on a PMGI based organic polymer

The recent observation of fractional quantum Hall effect in high mobility suspended graphene devices introduced a new direction in graphene physics, the field of electron-electron interaction dynamics. However, the technique used currently for the fabrication of such high mobility devices has several drawbacks. The most important is that the contact materials available for electronic devices are limited to only a few metals (Au, Pd, Pt, Cr and Nb) since only those are not attacked by the reactive acid (BHF) etching fabrication step. Here we show a new technique which leads to mechanically stable suspended high mobility graphene devices which is compatible with almost any type of contact material. The graphene devices prepared on a polydimethylglutarimide based organic resist show mobilities as high as 600.000 cm^2/Vs at an electron carrier density n = 5.0 10^9 cm^-2 at 77K. This technique paves the way towards complex suspended graphene based spintronic, superconducting and other types of devices.Comment: 14 pages, 4 figure

Tertiary development of the Polish and eastern Slovak parts of the Carpathian accretionary wedge : insights from balanced cross-sections

During Eocene-Sarmatian, a Polish-eastern Slovak portion of the Outer West Carpathian accretionary wedge was deformed in front of the ALCAPA terrane. This portion advanced into the area of the subducting remnant Carpathian Flysch Basin, a large oceanic tract left in front of the Alpine orogen. Western parts of the wedge were characterized by a noticeable lack of involvement of thick-skin thrusting and by a predominant development of fault-propagation folds. Eastern parts of the wedge were characterized by the involvement of thick-skin thrusting, triangle zones and back-thrusts. The frontal portion of the wedge was characterized by a décollement formed along the shale and gypsum formations of the Badenian molasse sediments, which resulted in the increased width of the thrust sheets. Forelandward thinning of foreland basin sediments indicates that the portion of the European Platform attached to the subducting oceanic lithosphere flexed underneath the advancing Carpathians as early as the Eocene. Oligocene sediments record syn-depositional thrusting by abrupt thickness changes over short distances. Younger periods of the thrusting are documented by the Eggenburgian-Karpatian piggy-back basin carried by thrust sheets in the frontal portion of the ALCAPA terrane, the Early Miocene age of the youngest sediments in the central portion of the wedge and involvement of the middle Badenian molasse sediments in the frontal portion of the wedge. The end of the shortening is documented by the lower Sarmatian end of the strike-slip fault activity behind the wedge, by the middle Sarmatian transgression over the deformed wedge in the Orava-Nowy Targ Basin, which is located in the rear portion of the wedge, and by the Sarmatian undeformed sediments sealing the wedge front. The existence of the forebulge in front of the advancing Carpathians is documented by local Eocene, Oligocene and Lower Miocene unconformities in the frontal portion of the wedge

A road to hydrogenating graphene by a reactive ion etching plasma

We report the hydrogenation of single and bilayer graphene by an argon-hydrogen plasma produced in a reactive ion etching (RIE) system. Electronic transport measurements in combination with Raman spectroscopy are used to link the electric mean free path to the optically extracted defect concentration. We emphasize the role of the self-bias of the graphene in suppressing the erosion of the akes during plasma processing. We show that under the chosen plasma conditions the process does not introduce considerable damage to the graphene sheet and that hydrogenation occurs primarily due to the hydrogen ions from the plasma and not due to fragmentation of water adsorbates on the graphene surface by highly accelerated plasma electrons. For this reason the hydrogenation level can be precisely controlled. The hydrogenation process presented here can be easily implemented in any RIE plasma system.Comment: 7 page

Nitric oxide modulates dynamic actin cytoskeleton and vesicle trafficking in a cell type-specific manner in root apices

NO is an important regulatory molecule in eukaryotes. Much of its effect is ascribed to the action of NO as a signalling molecule. However, NO can also directly modify proteins thus affecting their activities. Although the signalling functions of NO are relatively well recognized in plants, very little is known about its potential influence on the structural integrity of plant cells. In this study, the reorganization of the actin cytoskeleton, and the recycling of wall polysaccharides in plants via the endocytic pathway in the presence of NO or NO-modulating substances were analysed. The actin cytoskeleton and endocytosis in maize (Zea mays) root apices were visualized with fluorescence immunocytochemistry. The organization of the actin cytoskeleton is modulated via NO levels and the extent of such modulation is cell-type specific. In endodermis cells, actin cables change their orientation from longitudinal to oblique and cellular cross-wall domains become actin-depleted/depolymerized. The reaction is reversible and depends on the type of NO donor. Actin-dependent vesicle trafficking is also affected. This was demonstrated through the analysis of recycled wall material transported to newly-formed cell plates and BFA compartments. Therefore, it is concluded that, in plant cells, NO affects the functioning of the actin cytoskeleton and actin-dependent processes. Mechanisms for the reorganization of the actin cytoskeleton are cell-type specific, and such rearrangements might selectively impinge on the functioning of various cellular domains. Thus, the dynamic actin cytoskeleton could be considered as a downstream effector of NO signalling in cells of root apices

The Mechanism of Phase Transfer Synthesis of Silver Nanoparticles Using a Fatty Amine as Extractant/Phase Transfer Agent

The paper presents the research results on synthesizing silver nanoparticles in aqueous solutions and their extraction into the organic phase. Studies have shown that it is best to perform the extraction process using n-hexane > cyclohexane > toluene > chloroform > ethyl acetate. The results show a correlation between the dielectric constant of the organic phase and its ability to extract nanoparticles. The lower the dielectric constant is, the higher the extractability. The hydrodynamic radius of the silver nanoparticles changes after transfer to the organic phase, depending greatly on the organic phase used. The extraction mechanism is complex and multi-step. As the first step, the Ag nanoparticles are transferred to the phase boundary. As the second step, the octadecylamine (ODA) molecules adsorb on the silver nanoparticles (AgNPs) surface. The change in particle shape was also noted. This suggests that the interfacial processes are more complex than previously reported. Below the initial concentration of ODA 2 × 10−4 M, the formation of a third phase has been observed. In a one-stage experiment, the concentration of silver nanoparticles after transferring to the organic phase was increased 500 times in about 10 s. The role of the concentration of ODA, therefore, is not only a measure of the extraction efficiency and productivity but functions as an enabler to maintain favorable biphasic processing, which underlines the role of the solvent again

Isotope Shift Measurements of Stable and Short-Lived Lithium Isotopes for Nuclear Charge Radii Determination

Changes in the mean-square nuclear charge radii along the lithium isotopic chain were determined using a combination of precise isotope shift measurements and theoretical atomic structure calculations. Nuclear charge radii of light elements are of high interest due to the appearance of the nuclear halo phenomenon in this region of the nuclear chart. During the past years we have developed a new laser spectroscopic approach to determine the charge radii of lithium isotopes which combines high sensitivity, speed, and accuracy to measure the extremely small field shift of an 8 ms lifetime isotope with production rates on the order of only 10,000 atoms/s. The method was applied to all bound isotopes of lithium including the two-neutron halo isotope Li-11 at the on-line isotope separators at GSI, Darmstadt, Germany and at TRIUMF, Vancouver, Canada. We describe the laser spectroscopic method in detail, present updated and improved values from theory and experiment, and discuss the results.Comment: 34 pages, 24 figures, 14 table

Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature

We present a new fabrication method of graphene spin-valve devices which yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si$^{++}$/SiO$_2$. Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi- and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10$\mu$m combined with carrier mobilities exceeding 20,000 cm$^2$/Vs.Comment: 15 pages, 5 figure