Coarse wavelength division multiplexer on silicon-on-insulator for 100 GbE

A four-channel cascaded MZl based de-multiplexer at O-band with coarse channel spacing of 20 nm and band flatness of 13 nm is demonstrated on silicon-on-insulator. The device shows a mean crosstalk and insertion loss below -16 dB and 2.5 dB

Low-voltage Ge avalanche photodetector for highly sensitive 10Gb/s Si photonic receivers

We demonstrate low-voltage germanium waveguide avalanche photodetectors (APD) with gain-bandwidth product of 88GHz. A 7.1dB sensitivity improvement is demonstrated for an APD wire-bonded to a 10Gb/s CMOS transimpedance amplifier, at -6.2V APD bias

8x14Gb/s ring WDM modulator array with integrated tungsten heaters and Ge monitor photodetectors

An 8x14Gb/s wavelength-division multiplexed Si ring modulator array is presented with uniform channel performance. Tungsten heaters and Ge monitor photodetectors at the ring modulator drop ports are co-integrated to track and control the modulation quality

Low-voltage waveguide Ge APD based high sensitivity 10 Gb/s Si photonic receiver

We demonstrate low-voltage Ge waveguide avalanche photodetectors (APDs) with gain-bandwidth product over 100GHz. A 5.8dB avalanche sensitivity improvement (1x10(-12) bit error ratio at 10Gb/s) is obtained for the wire-bonded optical receiver at -5.9V APD bias

Dark current analysis in high-speed germanium p-i-n waveguide photodetectors

We present a dark current analysis in waveguide-coupled germanium vertical p-i-n photodetectors. In the analysis, a surface leakage current and a bulk leakage current were separated, and their activation energies were extracted. The surface leakage current originating from the minority carrier generation on the Ge layer sidewalls, governed by the Shockley-Read-Hall process and enhanced by the trap-assisted-tunneling process, was identified as the main contribution to the dark current of vertical p-i-n photodiodes at room temperature. The behavior of this surface leakage current as a function of temperature and reverse bias voltage is well reproduced by using the Hurckx model for trap-assisted-tunneling. Published by AIP Publishing

Polarization-insensitive 5x20Gb/s WDM Ge receiver using compact si ring filters with collective thermal tuning

A 5x20Gb/s WDM Ge receiver with 300GHz channel spacing is presented. Uniform flat-top channel responses result in a 0.1A/W fiber-referenced responsivity and crosstalk better than-15dB for all channels and polarization states