Ginzburg-Landau theory of dirty two band s±s_{\pm} superconductors

In this paper we study the effect of non-magnetic impurities on two-band $s_{\pm}$ superconductors by deriving the corresponding Ginzburg-Landau (GL) equation. Depending on the strength of (impurity-induced) inter-band scattering we find that there are two distinctive regions where the superconductors behave very differently. In the strong impurity induced inter-band scattering regime $T_c<<\tau^{-1}_t$, where $\tau_t\sim$ mean-life time an electron stays in one band the two-band superconductor behaves as an effective one-band dirty superconductor. In the other limit $T_c\geq\tau^{-1}_t$, the dirty two-band superconductor is described by a network of frustrated two-band superconductor grains connected by Josepshon tunnelling junctions. We argue that most pnictide superconductors are in the later regime.Comment: 4 pages, 1 figur

A multivariate empirical Bayes statistic for replicated microarray time course data

In this paper we derive one- and two-sample multivariate empirical Bayes statistics (the $\mathit{MB}$-statistics) to rank genes in order of interest from longitudinal replicated developmental microarray time course experiments. We first use conjugate priors to develop our one-sample multivariate empirical Bayes framework for the null hypothesis that the expected temporal profile stays at 0. This leads to our one-sample $\mathit{MB}$-statistic and a one-sample $\widetilde{T}{}^2$-statistic, a variant of the one-sample Hotelling $T^2$-statistic. Both the $\mathit{MB}$-statistic and $\widetilde{T}^2$-statistic can be used to rank genes in the order of evidence of nonzero mean, incorporating the correlation structure across time points, moderation and replication. We also derive the corresponding $\mathit{MB}$-statistics and $\widetilde{T}^2$-statistics for the one-sample problem where the null hypothesis states that the expected temporal profile is constant, and for the two-sample problem where the null hypothesis is that two expected temporal profiles are the same.Comment: Published at http://dx.doi.org/10.1214/009053606000000759 in the Annals of Statistics (http://www.imstat.org/aos/) by the Institute of Mathematical Statistics (http://www.imstat.org

Electrodynamics of moving media First semiannual report, 1 May - 1 Nov. 1965

Electrodynamics of moving media - Minkowski covariant formulation - Radiation due to oscillating dipole in vacuum - Field of moving charge in bounded region and Cerenkov radiatio

In-gap bound states and tunneling conductance of multiband superconductors through a normal/superconductor/superconductor junction

The tunneling conductance between a metal and a multiband s-wave superconductor with a thin layer of single-band s-wave superconductor sandwiched in between is examined in this paper. We show that an in-gap peak in conductance curve is found as a result of the formation of in-gap bound state between the single-band and multiband superconductor junctions if the phases of the superconducting order parameters of the multiband superconductor are frustrated. The implication of this result in determining the gap symmetry of the iron-based superconductors is discussed.Comment: 5 pages, 5 figure

Topics in electrodynamics of moving media Final report, 1 May 1965 - 1 May 1966

Electrodynamics of moving medi

A viable mouse model of factor X deficiency provides evidence for maternal transfer of factor X.

BackgroundActivated factor X (FXa) is a vitamin K-dependent serine protease that plays a pivotal role in blood coagulation by converting prothrombin to thrombin. There are no reports of humans with complete deficiency of FX, and knockout of murine F10 is embryonic or perinatal lethal.ObjectiveWe sought to generate a viable mouse model of FX deficiency.MethodsWe used a socket-targeting construct to generate F10-knockout mice by eliminating F10 exon 8 (knockout allele termed F10(tm1Ccmt), abbreviated as '-'; wild-type '+'), and a plug-targeting construct to generate mice expressing a FX variant with normal antigen levels but low levels of FX activity [4-9% normal in humans carrying the defect, Pro343--&gt;Ser, termed FX Friuli (mutant allele termed F10(tm2Ccmt), abbreviated as F)].ResultsF10 knockout mice exhibited embryonic or perinatal lethality. In contrast, homozygous Friuli mice [F10 (F/F)] had FX activity levels of approximately 5.5% (sufficient to rescue both embryonic and perinatal lethality), but developed age-dependent iron deposition and cardiac fibrosis. Interestingly, F10 (-/F) mice with FX activity levels of 1-3% also showed complete rescue of lethality. Further study of this model provides evidence supporting a role of maternal FX transfer in the embryonic survival.ConclusionsWe demonstrate that, while complete absence of FX is incompatible with murine survival, minimal FX activity as low as 1-3% is sufficient to rescue the lethal phenotype. This viable low-FX mouse model will facilitate the development of FX-directed therapies as well as investigation of the FX role in embryonic development

Optical Phonons in Twisted Bilayer Graphene with Gate-Induced Asymmetric Doping

Twisted bilayer graphene (tBLG) devices with ion gel gate dielectrics are studied using Raman spectroscopy in the twist angle regime where a resonantly enhanced G band can be observed. We observe prominent splitting and intensity quenching on the G Raman band when the carrier density is tuned away from charge neutrality. This G peak splitting is attributed to asymmetric charge doping in the two graphene layers, which reveals individual phonon self-energy renormalization of the two weakly-coupled layers of graphene. We estimate the effective interlayer capacitance at low doping density of tBLG using an interlayer screening model. The anomalous intensity quenching of both G peaks is ascribed to the suppression of resonant interband transitions between the two saddle points (van Hove singularities), that are displaced in the momentum space by gate-tuning. In addition, we observe a softening (hardening) of the R Raman band, a superlattice-induced phonon mode in tBLG, in electron (hole) doping. Our results demonstrate that gate modulation can be used to control the optoelectronic and vibrational properties in tBLG devices.Comment: 27 pages, 4 figures, and 8 pages Suppl. Inf