236 research outputs found
Coulomb Gap: How a Metal Film Becomes an Insulator
Electron tunneling measurements of the density of states (DOS) in ultra-thin
Be films reveal that a correlation gap mediates their insulating behavior. In
films with sheet resistance the correlation singularity appears
as the usual perturbative zero bias anomaly (ZBA) in the DOS. As R is
increased further, however, the ZBA grows and begins to dominate the DOS
spectrum. This evolution continues until a non-perturbative
Efros-Shklovskii Coulomb gap spectrum finally emerges in the highest R films.
Transport measurements of films which display this gap are well described by a
universal variable range hopping law .Comment: 4 figure
Low temperature field-effect in crystalline organic material
Molecular organic materials offer the promise of novel electronic devices but
also present challenges for understanding charge transport in narrow band
systems. Low temperature studies elucidate fundamental transport processes. We
report the lowest temperature field effect transport results on a crystalline
oligomeric organic material, rubrene. We find field effect switching with
on-off ratio up to 10^7 at temperatures down to 10 K. Gated transport shows a
factor of ~10 suppression of the thermal activation energy in 10-50 K range and
nearly temperature independent resistivity below 10 K.Comment: 5 pages, 4 figure
Tenfold Magnetoconductance in a Non-Magnetic Metal Film
We present magnetoconductance (MC) measurements of homogeneously disordered
Be films whose zero field sheet conductance (G) is described by the
Efros-Shklovskii hopping law . The low field
MC of the films is negative with G decreasing 200% below 1 T. In contrast the
MC above 1 T is strongly positive. At 8 T, G increases 1000% in perpendicular
field and 500% in parallel field. In the simpler parallel case, we observe {\em
field enhanced} variable range hopping characterized by an attenuation of
via the Zeeman interaction.Comment: 9 pages including 5 figure
Superconductivity on the localization threshold and magnetic-field-tuned superconductor-insulator transition in TiN films
Temperature- and magnetic-field dependent measurements of the resistance of
ultrathin superconducting TiN films are presented. The analysis of the
temperature dependence of the zero field resistance indicates an underlying
insulating behavior, when the contribution of Aslamasov-Larkin fluctuations is
taken into account. This demonstrates the possibility of coexistence of the
superconducting and insulating phases and of a direct transition from the one
to the other. The scaling behavior of magnetic field data is in accordance with
a superconductor-insulator transition (SIT) driven by quantum phase
fluctuations in two-dimensional superconductor. The temperature dependence of
the isomagnetic resistance data on the high-field side of the SIT has been
analyzed and the presence of an insulating phase was confirmed. A transition
from the insulating to a metallic phase is found at high magnetic fields, where
the zero-temperature asymptotic value of the resistance being equal to h/e^2.Comment: 5 pages, 4 eps figures, RevTeX4, Published versio
Density of states and magnetoconductance of disordered Au point contacts
We report the first low temperature magnetotransport measurements on
electrochemically fabricated atomic scale gold nanojunctions. As , the
junctions exhibit nonperturbatively large zero bias anomalies (ZBAs) in their
differential conductance. We consider several explanations and find that the
ZBAs are consistent with a reduced local density of states (LDOS) in the
disordered metal. We suggest that this is a result of Coulomb interactions in a
granular metal with moderate intergrain coupling. Magnetoconductance of atomic
scale junctions also differs significantly from that of less geometrically
constrained devices, and supports this explanation.Comment: 5 pages, 5 figures. Accepted to PRB as Brief Repor
Huge metastability in high-T_c superconductors induced by parallel magnetic field
We present a study of the temperature-magnetic field phase diagram of
homogeneous and inhomogeneous superconductivity in the case of a
quasi-two-dimensional superconductor with an extended saddle point in the
energy dispersion under a parallel magnetic field. At low temperature, a huge
metastability region appears, limited above by a steep superheating critical
field (H_sh) and below by a strongly reentrant supercooling field (H_sc). We
show that the Pauli limit (H_p) for the upper critical magnetic field is
strongly enhanced due to the presence of the Van Hove singularity in the
density of states. The formation of a non-uniform superconducting state is
predicted to be very unlikely.Comment: 5 pages, 2 figures; to appear in Phys. Rev.
Long-range transfer of electron-phonon coupling in oxide superlattices
The electron-phonon interaction is of central importance for the electrical
and thermal properties of solids, and its influence on superconductivity,
colossal magnetoresistance, and other many-body phenomena in
correlated-electron materials is currently the subject of intense research.
However, the non-local nature of the interactions between valence electrons and
lattice ions, often compounded by a plethora of vibrational modes, present
formidable challenges for attempts to experimentally control and theoretically
describe the physical properties of complex materials. Here we report a Raman
scattering study of the lattice dynamics in superlattices of the
high-temperature superconductor and the
colossal-magnetoresistance compound that suggests
a new approach to this problem. We find that a rotational mode of the MnO
octahedra in experiences pronounced
superconductivity-induced lineshape anomalies, which scale linearly with the
thickness of the layers over a remarkably long range of
several tens of nanometers. The transfer of the electron-phonon coupling
between superlattice layers can be understood as a consequence of long-range
Coulomb forces in conjunction with an orbital reconstruction at the interface.
The superlattice geometry thus provides new opportunities for controlled
modification of the electron-phonon interaction in complex materials.Comment: 13 pages, 4 figures. Revised version to be published in Nature
Material
Development of Modern Trends in Higher and Secondary Professional School Based on Innovative Development
The article considers innovative processes taking place in modern socio-economic conditions in the system of higher and secondary professional education in the Russian Federation. The study points out negative factors that prevent the formation of innovative processes in the economy. They identify innovative ways of development in the system of higher and secondary professional schools and essential differences in the definition of significant trends of development. The study has defined a socially-oriented model as the most progressive model of innovative development of higher education institutions. It is the social-oriented model that allows us integrating scientific-research and professional-oriented assets creating an innovative environment in higher education. Other processes are typical for secondary vocational education, the main purpose of which is defined as providing the middle level of the Russian economy with highly skilled workers and specialists. The study has revealed that there are approach processes of the secondary vocational education system with production. Business structures are taking more active part in the organization of the educational process every year. In recent years, interregional centers of competence and vocational training centers have been created on the basis of professional educational organizations mean by innovative frameworks
Keywords: innovation, higher education, secondary vocational education, educational institution
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