Improved Signal Processing Technique Leads to More Robust Self Diagnostic Accelerometer System

The self diagnostic accelerometer (SDA) is a sensor system designed to actively monitor the health of an accelerometer. In this case an accelerometer is considered healthy if it can be determined that it is operating correctly and its measurements may be relied upon. The SDA system accomplishes this by actively monitoring the accelerometer for a variety of failure conditions including accelerometer structural damage, an electrical open circuit, and most importantly accelerometer detachment. In recent testing of the SDA system in emulated engine operating conditions it has been found that a more robust signal processing technique was necessary. An improved accelerometer diagnostic technique and test results of the SDA system utilizing this technique are presented here. Furthermore, the real time, autonomous capability of the SDA system to concurrently compensate for effects from real operating conditions such as temperature changes and mechanical noise, while monitoring the condition of the accelerometer health and attachment, will be demonstrated

Electronic structure and optical properties of Sn and SnGe quantum dots

Self-assembled quantum dots in a Si–Ge–Sn system attract research attention as possible direct band gap materials, compatible with Si-based technology, with potential applications in optoelectronics. In this work, the electronic structure near the point and interband optical matrix elements of strained Sn and SnGe quantum dots in a Si or Ge matrix are calculated using the eight-band k·p method, and the competing L-valley conduction band states were found by the effective mass method. The strain distribution in the dots was found with the continuum mechanical model. The parameters required for the k·p or effective mass calculation for Sn were extracted by fitting to the energy band structure calculated by the nonlocal empirical pseudopotential method. The calculations show that the self-assembled Sn/Si dots, sized between 4 and 12 nm, have indirect interband transition energies between 0.8 and 0.4 eV and direct interband transitions between 2.5 and 2.0 eV. In particular, the actually grown, approximately cylindrical Sn dots in Si with a diameter and height of about 5 nm are calculated to have an indirect transition (to the L valley) of about 0.7 eV, which agrees very well with experimental results. Similar good agreement with the experiment was also found for SnGe dots grown on Si. However, neither of these is predicted to be direct band gap materials, in contrast to some earlier expectations

Measurements of UV radiation on rotating vertical plane at the ALOMAR Observatory (69° N, 16° E), Norway, June 2007

International audienceErythemaly weighted UV and total UVA irradiance measured at the ALOMAR (Arctic Lidar Observatory for Middle Atmosphere Research; 69° N, 16° E) in June 2007 by two Kipp & Zonen UV broadband meters type, UV-S-AE-T, are examined. One unit is movable and mounted to rotating vertical plane, and the other is permanently fixed horizontally. The UV broadband meters measure simultaneously to allow the comparison of UV irradiances on vertical and horizontal plane. The entire range of relative exposure variations during clear-sky conditions over ALOMAR is examined using STAR and Radonic1 model (developed at the Meteorological Institute, Munich) for various action spectra (erythema, UVA, and vitamin D3). It seems that multiplication of the daily mean dose from a standard broadband meter placed horizontally by 0.5 gives reasonable estimation of the daily mean exposure on a vertical plane randomly oriented towards Sun. The extreme value and daily variability of relative exposure are the highest for UVA, next for UVB, then for vitamin D3 weighed UV irradiance. The minima of relative exposure (~0.20?0.30) are almost the same for all weighting functions. Specific cloud configuration could lead to significant enhancement of UV relative exposure of rotating plane being the most pronounced when biometer is in shadow. A statistical model is proposed, that it is able to simulate vitamin D3 weighted UV irradiances on vertical surface using explanatory variables: erythemal and total UVA irradiance from standard (horizontal) observations by Kipp & Zonen dual band biometer, the orientation of vertical plane, solar zenith angle, and column amount of total ozone. Statistical model will allow to reconstruct (or monitor) vitamin D3 weighted UV irradiances using available past (or actual) data

Enhanced suppresion of localization in a continuous Random-Dimer Model

We consider a one-dimensional continuous (Kronig-Penney) extension of the (tight-binding) Random Dimer model of Dunlap et al. [Phys. Rev. Lett. 65, 88 (1990)]. We predict that the continuous model has infinitely many resonances (zeroes of the reflection coefficient) giving rise to extended states instead of the one resonance arising in the discrete version. We present exact, transfer-matrix numerical calculations supporting, both realizationwise and on the average, the conclusion that the model has a very large number of extended states.Comment: 10 pages, 3 Figures available on request, REVTeX 3.0, MA/UC3M/1/9

Self Diagnostic Accelerometer for Mission Critical Health Monitoring of Aircraft and Spacecraft Engines

A self diagnostic accelerometer system has been shown to be sensitive to multiple failure modes of charge mode accelerometers. These failures include sensor structural damage, an electrical open circuit and most importantly sensor detachment. In this paper, experimental work that was performed to determine the capabilities of a self diagnostic accelerometer system while operating in the presence of various levels of mechanical noise, emulating real world conditions, is presented. The results show that the system can successfully conduct a self diagnostic routine under these conditions