Exact solution of Schrodinger equation for modified Kratzer's molecular potential with the position-dependent mass

Exact solutions of Schrodinger equation are obtained for the modified Kratzer and the corrected Morse potentials with the position-dependent effective mass. The bound state energy eigenvalues and the corresponding eigenfunctions are calculated for any angular momentum for target potentials. Various forms of point canonical transformations are applied. PACS numbers: 03.65.-w; 03.65.Ge; 12.39.Fd Keywords: Morse potential, Kratzer potential, Position-dependent mass, Point canonical transformation, Effective mass Schr\"{o}dinger equation.Comment: 9 page

Experimental Study of the Dynamic Interaction Between the Foundation of the NEES/UCSD Shake Table and the Surrounding Soil

The results of an extensive experimental study of the dynamic interaction between the foundation block for the NEES/UCSD Large High Performance Outdoor Shake Table and the surrounding soil are presented. The vibrations induced by the two large NEES/UCLA eccentric mass shakers were recorded at multiple stations within the reinforced concrete foundation block and on the soil up to distances of 270 m from the block. The results obtained for the deformation pattern of the reaction block, the frequency response at selected stations on the block, and the average rigid-body motion of the foundation and its dependence on frequency for longitudinal (EW) excitation are presented in detail. Comparison of the response during shaker-induced vibrations with that resulting from the much stronger actuator forces shows that linearity holds for the range of forces involved. The attenuation of the ground motion away from the reaction block is also described

Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate

Cataloged from PDF version of article.The InxGa1-xN epitaxial layers, with indium (x) concentration changes between 0.16 and 1.00 (InN), were grown on GaN template/(0001) Al2O3 substrate by metal organic chemical vapour deposition. The indium content (x), lattice parameters and strain values in the InGaN layers were calculated from the reciprocal lattice mapping around symmetric (0002) and asymmetric (10-15) reflection of the GaN and InGaN layers. The characteristics of mosaic structures, such as lateral and vertical coherence lengths, tilt and twist angle and heterogeneous strain and dislocation densities (edge and screw dislocations) of the InGaN epilayers and GaN template layers were investigated by using high-resolution X-ray diffraction (HR-XRD) measurements. With a combination of Williamson-Hall (W-H) measurements and the fitting of twist angles, it was found that the indium content in the InGaN epilayers did not strongly effect the mosaic structures' parameters, lateral and vertical coherence lengths, tilt and twist angle, or heterogeneous strain of the InGaN epilayers

Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD

Cataloged from PDF version of article.We investigate the structural and electrical properties of AlxIn1-xN/AlN/GaN heterostructures with AlGaN buffers grown by MOCVD, which can be used as an alternative to AlInN HEMT structures with GaN buffer. The effects of the GaN channel thickness and the addition of a content graded AlGaN layer to the structural and electrical characteristics were studied through variable temperature Hall effect measurements, high resolution XRD, and AFM measurements. Enhancement in electron mobility was observed in two of the suggested AlxIn1-xN/AlN/GaN/Al0.04Ga0.96N heterostructures when compared to the standard AlxIn1-xN/AlN/GaN heterostructure. This improvement was attributed to better electron confinement in the channel due to electric field arising from piezoelectric polarization charge at the Al0.04Ga0.96N/GaN heterointerface and by the conduction band discontinuity formed at the same interface. If the growth conditions and design parameters of the AlxIn1-xN HEMT structures with AlGaN buffers can be modified further, the electron spillover from the GaN channel can be significantly limited and even higher electron mobilities, which result in lower two-dimensional sheet resistances, would be possible. (C) 2012 Elsevier B.V. All rights reserved

Double subband occupation of the two-dimensional electron gas in InxAl1− xN/AlN/ GaN/AlN heterostructures with a low indium content (0.064≤x≤0.140) barrier

Cataloged from PDF version of article.We present a carrier transport study on low indium content (0.064≤x≤0.140) InxAl1−xN/AlN/GaN/AlN heterostructures. Experimental Hall data were carried out as a function of temperature (33–300 K) and a magnetic field (0–1.4 T). A two-dimensional electron gas (2DEG) with single or double subbands and a twodimensional hole gas were extracted after implementing quantitative mobility spectrum analysis on the magnetic field dependent Hall data. The mobility of the lowest subband of 2DEG was found to be lower than the mobility of the second subband. This behavior is explained by way of interface related scattering mechanisms, and the results are supported with a one-dimensional self-consistent solution of non-linear Schrödinger–Poisson equations

Microstructural defect properties of InGaN/GaN blue light emitting diode structures

Cataloged from PDF version of article.In this paper, we study structural and morphological properties of metal-organic chemical vapour deposition-grown InGaN/GaN light emitting diode (LED) structures with different indium (In) content by means of high-resolution X-ray diffraction, atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), photoluminescence (PL) and current-voltage characteristic (I-V). We have found out that the tilt and twist angles, lateral and vertical coherence lengths of mosaic blocks, grain size, screw and edge dislocation densities of GaN and InGaN layers, and surface roughness monotonically vary with In content. Mosaic defects obtained due to temperature using reciprocal lattice space map has revealed optimized growth temperature for active InGaN layer of MQW LED. It has been observed in this growth temperature that according to AFM result, LED structure has high crystal dimension, and is rough whereas according to PL and FTIR results, bandgap energy shifted to blue, and energy peak half-width decreased at high values. According to I-V measurements, it was observed that LED reacted against light at optimized temperature. In conclusion, we have seen that InGaN MQW structure's structural, optical and electrical results supported one another

Population distribution and ancestry of the cancer protective MDM2 SNP285 (rs117039649)

Cataloged from PDF version of article.The MDM2 promoter SNP285C is located on the SNP309G allele. While SNP309G enhances Sp1 transcription factor binding and MDM2 transcription, SNP285C antagonizes Sp1 binding and reduces the risk of breast-, ovary- and endometrial cancer. Assessing SNP285 and 309 genotypes across 25 different ethnic populations (>10.000 individuals), the incidence of SNP285C was 6-8% across European populations except for Finns (1.2%) and Saami (0.3%). The incidence decreased towards the Middle-East and Eastern Russia, and SNP285C was absent among Han Chinese, Mongolians and African Americans. Interhaplotype variation analyses estimated SNP285C to have originated about 14,700 years ago (95% CI: 8,300 - 33,300). Both this estimate and the geographical distribution suggest SNP285C to have arisen after the separation between Caucasians and modern day East Asians (17,000 - 40,000 years ago). We observed a strong inverse correlation (r = -0.805; p < 0.001) between the percentage of SNP309G alleles harboring SNP285C and the MAF for SNP309G itself across different populations suggesting selection and environmental adaptation with respect to MDM2 expression in recent human evolution. In conclusion, we found SNP285C to be a pan-Caucasian variant. Ethnic variation regarding distribution of SNP285C needs to be taken into account when assessing the impact of MDM2 SNPs on cancer risk