Double subband occupation of the two-dimensional electron gas in InxAl1− xN/AlN/
GaN/AlN heterostructures with a low indium content (0.064≤x≤0.140) barrier
Cataloged from PDF version of article.We present a carrier transport study on low indium content (0.064≤x≤0.140) InxAl1−xN/AlN/GaN/AlN
heterostructures. Experimental Hall data were carried out as a function of temperature (33–300 K) and a
magnetic field (0–1.4 T). A two-dimensional electron gas (2DEG) with single or double subbands and a twodimensional
hole gas were extracted after implementing quantitative mobility spectrum analysis on the
magnetic field dependent Hall data. The mobility of the lowest subband of 2DEG was found to be lower than
the mobility of the second subband. This behavior is explained by way of interface related scattering
mechanisms, and the results are supported with a one-dimensional self-consistent solution of non-linear
Schrödinger–Poisson equations
