Vigilar al diferente. Las imágenes del indígena en la historia de México

Se construyen los imaginarios colectivos en torno a los indígenas, como grupo subalterno y subordinado, en el proceso de formación social de México. Se parte de reconocer el fenómeno histórico como la articulación estructural de grupos hegemónicos y grupos subordinados en los que los primeros movilizan imaginarios sobre los segundos, dichos imaginarios se asientan como postulados que funcionan como constructos ideológicos que sirven para mantener el control político de la sociedad en su conjunto. El artículo analiza un periodo largo de la historia de México; cada uno se estudia como un bloque histórico en el cual se los constructos imaginarios hegemónicos, asignando estatus determinados a los grupos no dominantes.Se construyen los imaginarios colectivos en torno a los indígenas, como grupo subalterno y subordinado, en el proceso de formación social de México. Se parte de reconocer el fenómeno histórico como la articulación estructural de grupos hegemónicos y grupos subordinados en los que los primeros movilizan imaginarios sobre los segundos, dichos imaginarios se asientan como postulados que funcionan como constructos ideológicos que sirven para mantener el control político de la sociedad en su conjunto. El artículo analiza un periodo largo de la historia de México; cada uno se estudia como un bloque histórico en el cual se deslizan los constructos imaginarios hegemónicos, asignando estatus determinados a los grupos no dominantes

Mesoscopic approach to granular crystal dynamics

We present a mesoscopic approach to granular crystal dynamics, which comprises a three-dimensional finite-element model and a one-dimensional regularized contact model. The approach investigates the role of vibrational-energy trapping effects in the dynamic behavior of one-dimensional chains of particles in contact (i.e., granular crystals), under small to moderate impact velocities. The only inputs of the models are the geometry and the elastic material properties of the individual particles that form the system. We present detailed verification results and validate the model comparing its predictions with experimental data. This approach provides a physically sound, first-principle description of dissipative losses in granular systems

2012 ERA-EDTA Registry annual report: Cautious optimism on outcomes, concern about persistent inequalities and data black-outs

The 2012 ERA-EDTA Registry Annual Report contains both good news and bad news. On the bright side, the 2-year survival of patients starting renal replacement therapy (RRT) for chronic kidney disease (CKD), on dialysis or receiving a living-related kidney transplantation, has progressively increased to 82.2, 79.7 and 98.3%, respectively, whereas for cadaveric kidney transplantation it remains stable (96.0–96.1%). On the dark side, inequalities persist between European citizens in access to renal transplantation and in incidence and prevalence of RRT. Living in Greece, Belgium (French- or Dutch-speaking) or Portugal (the GBP countries) is associated with higher chances of initiating RRT than living in other European countries. The adjusted RRT incidence for GBP countries was 188, 201-174 and 220* (* unadjusted) pmp in 2012, respectively (versus 122, 114 and 97 pmp in the Netherlands or two Spanish regions bordering Portugal). In lower income countries, a low RRT incidence may represent lack of access to needed healthcare (e.g. Montenegro 26 pmp). However, how can the high incidence and prevalence of RRT in the GBP countries be explained? Do GBP citizens have access to RRT that is denied, rejected or considered unnecessary in other high income countries? Does the GBP healthcare system fail to prevent progression of CKD? Do local genetic or environmental factors favour CKD progression? Unravelling the underlying reasons is an urgent research need: only an understanding of the causes will allow correction of the problem. Unavailability of data from some large countries (e.g. Germany and Italy) is not helpfulGrant support was provided by ISCIII and FEDER funds PI13/00047, Sociedad Española de Nefrologia, ISCIII-RETIC REDinREN/RD012/0021, Comunidad de Madrid CIFRA S2010/BMD-2378. Salary support was provided by Programa Intensificación Actividad Investigadora (ISCIII/Agencia Laín- Entralgo/CM) to A.O

Evolución de la migración de retorno en México: migrantes procedentes de Estados Unidos en 1995 y de 1999 a 2014

La migración de retorno es un fenómeno que ha existido desde sus inicios como parte de la dualidad que se plantea en la circularidad migratoria. Su evolución ha sido influenciada por diversos factores, tanto por el entorno social, político y económico, como por la decisión propia del migrante. No obstante, existen pocos estudios dedicados a observar y analizar los flujos de retorno, aunque debe reconocerse que recientemente el fenómeno ha cobrado un inusitado in-terés académico y político. Además, se conocen pocos avances respecto a la discusión teórica y empírica acerca del porqué regresan los migrantes. Las principales preocupaciones se han dado en los últimos años debido a la crisis económica de Estados Unidos y el recrudecimiento de las leyes de migración en dicho país. Existen diferentes perspectivas desde las cuales se puede analizar este fenómeno migratorio, como las causas de retorno, las vías por las cuales retorna el migrante (aérea o terrestre) y las características sociodemográficas del retornado, entre otros. El presente artículo se enfoca a analizar las principales razones o las causas por las cuales los mi-grantes retornan a México. La población objetivo para este estudio son los migrantes procedentes de Estados Unidos que arriban a México por vía terrestre

Impact of the gate oxide reliability of SiC MOSFETs on the junction temperature estimation using temperature sensitive electrical parameters

Bias temperature instability (BTI) is more problematic in SiC power MOSFETs due to the occurrence of higher interface state traps and fixed oxide traps compared to traditional silicon MOS interfaces where there are no carbon atoms degrading the atomically smooth Si/SiO2 interface. The use of temperature sensitive electrical parameters (TSEPs) for measuring the junction temperature and enabling health monitoring based on junction temperature identification is a promising technique for increasing the reliability of power devices, however in the light of increased BTI in SiC devices, this must be carefully assessed. This paper evaluates how BTI of SiC power MOSFETs under high temperature gate bias stresses affects the electrical parameters used as TSEPs and its impact on condition monitoring

SinEx DB: a database for single exon coding sequences in mammalian genomes

Indexación: Web of Science.Eukaryotic genes are typically interrupted by intragenic, noncoding sequences termed introns. However, some genes lack introns in their coding sequence (CDS) and are generally known as 'single exon genes' (SEGs). In this work, a SEG is defined as a nuclear, protein-coding gene that lacks introns in its CDS. Whereas, many public databases of Eukaryotic multi-exon genes are available, there are only two specialized databases for SEGs. The present work addresses the need for a more extensive and diverse database by creating SinEx DB, a publicly available, searchable database of predicted SEGs from 10 completely sequenced mammalian genomes including human. SinEx DB houses the DNA and protein sequence information of these SEGs and includes their functional predictions (KOG) and the relative distribution of these functions within species. The information is stored in a relational database built with My SQL Server 5.1.33 and the complete dataset of SEG sequences and their functional predictions are available for downloading. SinEx DB can be interrogated by: (i) a browsable phylogenetic schema, (ii) carrying out BLAST searches to the in-house SinEx DB of SEGs and (iii) via an advanced search mode in which the database can be searched by key words and any combination of searches by species and predicted functions. SinEx DB provides a rich source of information for advancing our understanding of the evolution and function of SEGs.https://academic.oup.com/database/article-lookup/doi/10.1093/database/baw09

Bias temperature instability and condition monitoring in SiC power MOSFETs

Threshold voltage shift due to bias temperature instability (BTI) is a major concern in SiC power MOSFETs. The SiC/SiO2 gate dielectric interface is typically characterized by a higher density of interface traps compared to the conventional Si/SiO2 interface. The threshold voltage shift that arises from BTI has significant implications on the reliability of SiC power MOSFETs, hence, techniques for detecting the change in electrical parameters due to gate oxide degradation are desirable. Using accelerated high temperature gate bias stress tests on SiC MOSFETs, it has been shown that the output and transfer characteristics are affected by BTI. This paper presents the impact BTI induced threshold voltage shift on the forward voltage of the SiC MOSFET body diode during third quadrant operation. Using the forward voltage of the body diode during reverse conduction of low currents, threshold voltage shift can be detected, hence, the impact of BTI can be evaluated. The implications of the body diode forward voltage shift on junction temperature measurements are also studied in the context of TSEPs. The findings in this paper are important for engineers seeking to implement condition and health monitoring techniques on SiC power devices