Experimental observation of an enhanced anisotropic magnetoresistance in non-local configuration

We compare non-local magnetoresistance measurements in multi-terminal Ni nanostructures with corresponding local experiments. In both configurations, the measured voltages show the characteristic features of anisotropic magnetoresistance (AMR). However, the magnitude of the non-local AMR signal is up to one order of magnitude larger than its local counterpart. Moreover, the non-local AMR increases with increasing degree of non-locality, i.e., with the separation between the region of the main current flow and the voltage measurement region. All experimental observations can be consistently modeled in terms of current spreading in a non-isotropic conductor. Our results show that current spreading can significantly enhance the magnetoresistance signal in non-local experiments

Anisotropic Hall Effect in Single Crystal Heavy Fermion YbAgGe

Temperature- and field-dependent Hall effect measurements are reported for YbAgGe, a heavy fermion compound exhibiting a field-induced quantum phase transition, and for two other closely related members of the RAgGe series: a non-magnetic analogue, LuAgGe and a representative, ''good local moment'', magnetic material, TmAgGe. Whereas the temperature dependent Hall coefficient of YbAgGe shows behavior similar to what has been observed in a number of heavy fermion compounds, the low temperature, field-dependent measurements reveal well defined, sudden changes with applied field; in specific for $H \perp c$ a clear local maximum that sharpens as temperature is reduced below 2 K and that approaches a value of 45 kOe - a value that has been proposed as the $T = 0$ quantum critical point. Similar behavior was observed for $H \| c$ where a clear minimum in the field-dependent Hall resistivity was observed at low temperatures. Although at our base temperatures it is difficult to distinguish between the field-dependent behavior predicted for (i) diffraction off a critical spin density wave or (ii) breakdown in the composite nature of the heavy electron, for both field directions there is a distinct temperature dependence of a feature that can clearly be associated with a field-induced quantum critical point at $T = 0$ persisting up to at least 2 K.Comment: revised versio

Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor

We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb$_{2}$, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss contribution of orbital MR and quantum interference to enhanced magnetic field response of electrical resistivity.Comment: 5 pages, 5 figure

Ballistic anisotropic magnetoresistance

Electronic transport in ferromagnetic ballistic conductors is predicted to exhibit ballistic anisotropic magnetoresistance (BAMR) - a change in the ballistic conductance with the direction of magnetization. This phenomenon originates from the effect of the spin-orbit interaction on the electronic band structure which leads to a change in the number of bands crossing the Fermi energy when the magnetization direction changes. We illustrate the significance of this phenomenon by performing ab-initio calculations of the ballistic conductance in ferromagnetic Ni and Fe nanowires which display a sizable BAMR when the magnetization changes direction from parallel to perpendicular to the wire axis

Synthesis and characterization of core-shell structure silica-coated Fe29.5Ni70.5 nanoparticles

In view of potential applications of magnetic particles in biomedicine and electromagnetic devices, we made use of the classical Stober method base-catalysed hydrolysis and condensation of tetraethoxysilane (TEOS) to encapsulate FeNi nanoparticles within a silica shell. An original stirring system under high power ultrasounds made possible to disperse the otherwise agglomerated particles. Sonication guaranteed particles to remain dispersed during the Stober synthesis and also improved the efficiency of the method. The coated particles are characterized by electron microscopy (TEM) and spectroscopy (EDX) showing a core-shell structure with a uniform layer of silica. Silica-coating does not affect the core magnetic properties. Indeed, all samples are ferromagnetic at 77 K and room temperature and the Curie point remains unchanged. Only the coercive force shows an unexpected non-monotonous dependence on silica layer thickness.Comment: Regular paper submited to international peer-reveiwed journa

Surface Magnetoelectric Effect in Ferromagnetic Metal Films

A surface magnetoelectric effect is revealed by density-functional calculations that are applied to ferromagnetic Fe(001), Ni(001) and Co(0001) films in the presence of external electric field. The effect originates from spin-dependent screening of the electric field which leads to notable changes in the surface magnetization and the surface magnetocrystalline anisotropy. These results are of considerable interest in the area of electrically-controlled magnetism and magnetoelectric phenomena

Diffusive and ballistic current spin-polarization in magnetron-sputtered L1o-ordered epitaxial FePt

We report on the structural, magnetic, and electron transport properties of a L1o-ordered epitaxial iron-platinum alloy layer fabricated by magnetron-sputtering on a MgO(001) substrate. The film studied displayed a long range chemical order parameter of S~0.90, and hence has a very strong perpendicular magnetic anisotropy. In the diffusive electron transport regime, for temperatures ranging from 2 K to 258 K, we found hysteresis in the magnetoresistance mainly due to electron scattering from magnetic domain walls. At 2 K, we observed an overall domain wall magnetoresistance of about 0.5 %. By evaluating the spin current asymmetry alpha = sigma_up / sigma_down, we were able to estimate the diffusive spin current polarization. At all temperatures ranging from 2 K to 258 K, we found a diffusive spin current polarization of > 80%. To study the ballistic transport regime, we have performed point-contact Andreev-reflection measurements at 4.2 K. We obtained a value for the ballistic current spin polarization of ~42% (which compares very well with that of a polycrystalline thin film of elemental Fe). We attribute the discrepancy to a difference in the characteristic scattering times for oppositely spin-polarized electrons, such scattering times influencing the diffusive but not the ballistic current spin polarization.Comment: 22 pages, 13 figure

Nanosized superparamagnetic precipitates in cobalt-doped ZnO

The existence of semiconductors exhibiting long-range ferromagnetic ordering at room temperature still is controversial. One particularly important issue is the presence of secondary magnetic phases such as clusters, segregations, etc... These are often tedious to detect, leading to contradictory interpretations. We show that in our cobalt doped ZnO films grown homoepitaxially on single crystalline ZnO substrates the magnetism unambiguously stems from metallic cobalt nano-inclusions. The magnetic behavior was investigated by SQUID magnetometry, x-ray magnetic circular dichroism, and AC susceptibility measurements. The results were correlated to a detailed microstructural analysis based on high resolution x-ray diffraction, transmission electron microscopy, and electron-spectroscopic imaging. No evidence for carrier mediated ferromagnetic exchange between diluted cobalt moments was found. In contrast, the combined data provide clear evidence that the observed room temperature ferromagnetic-like behavior originates from nanometer sized superparamagnetic metallic cobalt precipitates.Comment: 20 pages, 6 figures; details about background subtraction added to section III. (XMCD

Theory of the anomalous Hall effect from the Kubo formula and the Dirac equation

A model to treat the anomalous Hall effect is developed. Based on the Kubo formalism and on the Dirac equation, this model allows the simultaneous calculation of the skew-scattering and side-jump contributions to the anomalous Hall conductivity. The continuity and the consistency with the weak-relativistic limit described by the Pauli Hamiltonian is shown. For both approaches, Dirac and Pauli, the Feynman diagrams, which lead to the skew-scattering and the side-jump contributions, are underlined. In order to illustrate this method, we apply it to a particular case: a ferromagnetic bulk compound in the limit of weak-scattering and free-electrons approximation. Explicit expressions for the anomalous Hall conductivity for both skew-scattering and side-jump mechanisms are obtained. Within this model, the recently predicted ''spin Hall effect'' appears naturally

Martensitic transition and magnetoresistance in a Cu-Al-Mn shape memory alloy. Influence of aging

We have studied the effect of ageing within the miscibility gap on the electric, magnetic and thermodynamic properties of a non-stoichiometric Heusler Cu-Al-Mn shape-memory alloy, which undergoes a martensitic transition from a $bcc$-based ($\beta$-phase) towards a close-packed structure ($M$-phase). Negative magnetoresistance which shows an almost linear dependence on the square of magnetization with different slopes in the $M$- and $\beta$-phases, was observed. This magnetoresistive effect has been associated with the existence of Mn-rich clusters with the Cu$_2$AlMn-structure. The effect of an applied magnetic field on the martensitic transition has also been studied. The entropy change between the $\beta$- and $M$-phases shows negligible dependence on the magnetic field but it decreases significantly with annealing time within the miscibility gap. Such a decrease is due to the increasing amount of Cu$_2$MnAl-rich domains that do not transform martensitically.Comment: 9 pages, 9 figures, accepted for publication in PR