Theory of rigid-plane phonon modes in layered crystals

The lattice dynamics of low-frequency rigid-plane modes in metallic (graphene multilayers, GML) and in insulating (hexagonal boron-nitride multilayers, BNML) layered crystals is investigated. The frequencies of shearing and compression (stretching) modes depend on the layer number {\EuScript N} and are presented in the form of fan diagrams. The results for GML and BNML are very similar. In both cases only the interactions (van der Waals and Coulomb) between nearest-neighbor planes are effective, while the interactions between more distant planes are screened. A comparison with recent Raman scattering results on low-frequency shear modes in GML [Tan {\it et al.}, arXiv:1106.1146v1 (2011)] is made. Relations with the low-lying rigid-plane phonon dispersions in the bulk materials are established. Master curves which connect the fan diagram frequencies for any given {\EuScript N} are derived. Static and dynamic thermal correlation functions for rigid-layer shear and compression modes are calculated. The results might be of use for the interpretation of friction force experiments on multilayer crystals

Piezoresponse force microscopy for polarity imaging of GaN

The polarity distribution of GaN based lateral polarity heterostructures is investigated by piezoresponse force microscopy (PFM). Simultaneous imaging of surface morphology, as well as the phase and magnitude of the piezoelectric response, is performed by PFM on a GaN film with patterned polarities on a c-Al2O3 substrate. We demonstrate that the polarity distribution of GaN based lateral polarity heterostructures can be deduced from the phase image of the piezoresponse with nanometer scale spatial resolution

Probing Mechanical Properties of Graphene with Raman Spectroscopy

The use of Raman scattering techniques to study the mechanical properties of graphene films is reviewed here. The determination of Gruneisen parameters of suspended graphene sheets under uni- and bi-axial strain is discussed and the values are compared to theoretical predictions. The effects of the graphene-substrate interaction on strain and to the temperature evolution of the graphene Raman spectra are discussed. Finally, the relation between mechanical and thermal properties is presented along with the characterization of thermal properties of graphene with Raman spectroscopy.Comment: To appear in the Journal of Materials Scienc

Low dimensional nanostructures of fast ion conducting lithium nitride

As the only stable binary compound formed between an alkali metal and nitrogen, lithium nitride possesses remarkable properties and is a model material for energy applications involving the transport of lithium ions. Following a materials design principle drawn from broad structural analogies to hexagonal graphene and boron nitride, we demonstrate that such low dimensional structures can also be formed from an s-block element and nitrogen. Both one- and two-dimensional nanostructures of lithium nitride, Li3N, can be grown despite the absence of an equivalent van der Waals gap. Lithium-ion diffusion is enhanced compared to the bulk compound, yielding materials with exceptional ionic mobility. Li3N demonstrates the conceptual assembly of ionic inorganic nanostructures from monolayers without the requirement of a van der Waals gap. Computational studies reveal an electronic structure mediated by the number of Li-N layers, with a transition from a bulk narrow-bandgap semiconductor to a metal at the nanoscale

Raman spectroscopy as a versatile tool for studying the properties of graphene.

Raman spectroscopy is an integral part of graphene research. It is used to determine the number and orientation of layers, the quality and types of edge, and the effects of perturbations, such as electric and magnetic fields, strain, doping, disorder and functional groups. This, in turn, provides insight into all sp(2)-bonded carbon allotropes, because graphene is their fundamental building block. Here we review the state of the art, future directions and open questions in Raman spectroscopy of graphene. We describe essential physical processes whose importance has only recently been recognized, such as the various types of resonance at play, and the role of quantum interference. We update all basic concepts and notations, and propose a terminology that is able to describe any result in literature. We finally highlight the potential of Raman spectroscopy for layered materials other than graphene

Vibrational properties of single-wall nanotubes and monolayers of hexagonal BN

We report a detailed study of the vibrational properties of BN single-walled nanotubes and of the BN monolayer. Our results have been obtained from a well-established Tight-Binding model complemented with an electrostatic model to account for the long-range interactions arising from the polar nature of the material, and which are not included in the Tight-Binding model. Our study provides a wealth of data for the BN monolayer and nanotubes, such as phonon band structure, vibrational density of states, elastic constants, etc. For the nanotubes we obtain the behavior of the optically active modes as a function of the structural parameters, and we compare their frequencies with those derived from a zone-folding treatment applied to the phonon frequencies of the BN monolayer, finding general good agreement between the two.Comment: 14 pages with 10 postscript figures, to appear in PRB, January 15th 200

Quantifying defects in graphene via Raman spectroscopy at different excitation energies.

We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities, for a given defect density, strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an interdefect distance ∼3 nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity

Large-scale and rapid synthesis of disk-shaped and nano-sized graphene

We synthesized disk-shaped and nano-sized graphene (DSNG) though a novel ion-exchange methodology. This new methodology is achieved by constructing metal ion/ion-exchange resin framework. The morphology and size of the graphene can be modulated by changing the mass ratio of the carbon-containing resin to the cobalt-containing precursor. This is the first time to show that the DSNG formed on the granular transition metal substrate. The DSNG gives a high intensity of photoluminescence at near-UV wavelength of 311 nm which may provide a new type of fluorescence for applications in laser devices, ultraviolet detector UV-shielding agent and energy technology. The emission intensity of the DSNG is thirty times higher than that of the commercial large graphene. Our approach for graphene growth is conveniently controllable, easy to scale-up and the DSNG shows superior luminescent properties as compared to conventional large graphene