Slow Mass Transport and Statistical Evolution of An Atomic Gas Across the Superfluid-Mott Insulator Transition

We study transport dynamics of ultracold cesium atoms in a two-dimensional optical lattice across the superfluid-Mott insulator transition based on in situ imaging. Inducing the phase transition with a lattice ramping routine expected to be locally adiabatic, we observe a global mass redistribution which requires a very long time to equilibrate, more than 100 times longer than the microscopic time scales for on-site interaction and tunneling. When the sample enters the Mott insulator regime, mass transport significantly slows down. By employing fast recombination pulses to analyze the occupancy distribution, we observe similarly slow-evolving dynamics, and a lower effective temperature at the center of the sample

Electro-Pneumatic Wiring Software for Distance-Learning Students in Automation Control Laboratories

When teaching electro-pneumatic circuits in the automation control class for a distance-learning program, one of the main issues is how to provide hands-on experience for students. In most cases, they can only use simulation design software and watch videos solving laboratory problems without access to the actual equipment. In this paper, the authors developed an electrical wiring software and assembly platform which can help students enhance their hands-on experience when taking the course online. Results show that the performance between on-campus students and distance-learning (DL) students are very similar.Cockrell School of Engineerin

TFT Small Signal Model and Analysis

We present an accurate small signal model for thin film transistors (TFTs) taking into account non-idealities such as contact resistance, parasitic capacitance, and threshold voltage shift. The model gives high accuracy in s-parameters, and the predicted cutoff frequency yields 1% discrepancy compared with measurement results. In contrast, the conventional CMOS small signal model adapted for TFTs yields 12.5% error. The TFT’s cutoff frequency is also evaluated under bias stress to examine the effect of device instability on small signal behavior.This is the author accepted manuscript. The final version is available from IEEE via http://dx.doi.org/10.1109/LED.2016.257592

Electric-field-induced strong enhancement of electroluminescence in multilayer molybdenum disulfide.

The layered transition metal dichalcogenides have attracted considerable interest for their unique electronic and optical properties. While the monolayer MoS2 exhibits a direct bandgap, the multilayer MoS2 is an indirect bandgap semiconductor and generally optically inactive. Here we report electric-field-induced strong electroluminescence in multilayer MoS2. We show that GaN-Al2O3-MoS2 and GaN-Al2O3-MoS2-Al2O3-graphene vertical heterojunctions can be created with excellent rectification behaviour. Electroluminescence studies demonstrate prominent direct bandgap excitonic emission in multilayer MoS2 over the entire vertical junction area. Importantly, the electroluminescence efficiency observed in multilayer MoS2 is comparable to or higher than that in monolayers. This strong electroluminescence can be attributed to electric-field-induced carrier redistribution from the lowest energy points (indirect bandgap) to higher energy points (direct bandgap) in k-space. The electric-field-induced electroluminescence is general for other layered materials including WSe2 and can open up a new pathway towards transition metal dichalcogenide-based optoelectronic devices

Elliptic Genera and 3d Gravity

We describe general constraints on the elliptic genus of a 2d supersymmetric conformal field theory which has a gravity dual with large radius in Planck units. We give examples of theories which do and do not satisfy the bounds we derive, by describing the elliptic genera of symmetric product orbifolds of $K3$, product manifolds, certain simple families of Calabi-Yau hypersurfaces, and symmetric products of the "Monster CFT." We discuss the distinction between theories with supergravity duals and those whose duals have strings at the scale set by the AdS curvature. Under natural assumptions we attempt to quantify the fraction of (2,2) supersymmetric conformal theories which admit a weakly curved gravity description, at large central charge.Comment: 50 pages, 9 figures, v2: minor corrections to section

Large area growth and electrical properties of p-type WSe2 atomic layers.

Transition metal dichacogenides represent a unique class of two-dimensional layered materials that can be exfoliated into single or few atomic layers. Tungsten diselenide (WSe(2)) is one typical example with p-type semiconductor characteristics. Bulk WSe(2) has an indirect band gap (∼ 1.2 eV), which transits into a direct band gap (∼ 1.65 eV) in monolayers. Monolayer WSe(2), therefore, is of considerable interest as a new electronic material for functional electronics and optoelectronics. However, the controllable synthesis of large-area WSe(2) atomic layers remains a challenge. The studies on WSe(2) are largely limited by relatively small lateral size of exfoliated flakes and poor yield, which has significantly restricted the large-scale applications of the WSe(2) atomic layers. Here, we report a systematic study of chemical vapor deposition approach for large area growth of atomically thin WSe(2) film with the lateral dimensions up to ∼ 1 cm(2). Microphotoluminescence mapping indicates distinct layer dependent efficiency. The monolayer area exhibits much stronger light emission than bilayer or multilayers, consistent with the expected transition to direct band gap in the monolayer limit. The transmission electron microscopy studies demonstrate excellent crystalline quality of the atomically thin WSe(2). Electrical transport studies further show that the p-type WSe(2) field-effect transistors exhibit excellent electronic characteristics with effective hole carrier mobility up to 100 cm(2) V(-1) s(-1) for monolayer and up to 350 cm(2) V(-1) s(-1) for few-layer materials at room temperature, comparable or well above that of previously reported mobility values for the synthetic WSe(2) and comparable to the best exfoliated materials

Threshold Voltage Compensation Error in Voltage Programmed AMOLED Displays

A new accurate voltage-programmed pixel circuit for active matrix organic light-emitting diode (AMOLED) displays is presented. Composed of three TFTs and one storage capacitor, the proposed pixel circuit is implemented both in a-Si and a-IGZO TFT technologies for the same pixel size for fair comparison. The simulation result for the a-Si-based design shows that, during a programming time of 90 μs, the pixel circuit was able to compensate for a 3V threshold voltage (Vth) shift of the drive TFT with almost no error. In contrast, the a-IGZO-based pixel circuit, has a larger current error (of around 8%), despite its proven three-fold higher speed.Authors thank to the EPSRC under Project EP/M013650/1