Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy

We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well (QW) at 440 nm by employing surface plasmons (SPs) probed by time-resolved photoluminescence spectroscopy. We explore this remarkable enhancement of the emission rates and intensities resulting from the efficient energy transfer from electron-hole pair recombination in the QW to electron vibrations of SPs at the metal-coated surface of the semiconductor heterostructure. This QW-SP coupling is expected to lead to a new class of super bright and high-speed light-emitting diodes (LEDs) that offer realistic alternatives to conventional fluorescent tubes

Surface plasmon enhanced InGaN light emitter

We report a dramatic increase in the photoluminescence (PL) emitted from InGaN/GaN quantum wells (QW), obtained by covering these sample surface with thin metallic films. Remarkable enhancements of PL peak intensities were obtained from In_(0.3)Ga_(0.7)N QWs with 50 nm thick silver and aluminum coating with 10 nm GaN spacer. These PL enhancements can be attributed to strong interaction between QWs and surface plasmons (SPs). No such enhancements were obtained from samples coated with gold, as its well-known plasmon resonance occurs only at longer wavelengths. We also showed that QW-SP coupling increase the internal quantum efficiencies by measuring the temperature dependence of PL intensities. QW-SP coupling is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we found that the metal nano-structure is very important facto to decide the light extraction. A possible mechanism of QW-SP coupling and emission enhancement has been developed, and high-speed and efficient light emission is predicted for optically as well as electrically pumped light emitters

Surface plasmon enhanced light emitting efficiencies of InGaN/GaN quantum wells

We report a dramatic increase in the light emitting efficiency of InGaN/GaN resulting from surface plasmon interaction between the quantum wells and evaporated silver layers, whereas no such enhancement was obtained from gold deposited samples

Surface plasmon enhanced InGaN light emitter

We report a dramatic increase in the photoluminescence (PL) emitted from InGaN/GaN quantum wells (QW), obtained by covering these sample surface with thin metallic films. Remarkable enhancements of PL peak intensities were obtained from In_(0.3)Ga_(0.7)N QWs with 50 nm thick silver and aluminum coating with 10 nm GaN spacer. These PL enhancements can be attributed to strong interaction between QWs and surface plasmons (SPs). No such enhancements were obtained from samples coated with gold, as its well-known plasmon resonance occurs only at longer wavelengths. We also showed that QW-SP coupling increase the internal quantum efficiencies by measuring the temperature dependence of PL intensities. QW-SP coupling is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we found that the metal nano-structure is very important facto to decide the light extraction. A possible mechanism of QW-SP coupling and emission enhancement has been developed, and high-speed and efficient light emission is predicted for optically as well as electrically pumped light emitters

The 2020 UV emitter roadmap

Solid state UV emitters have many advantages over conventional UV sources. The (Al,In,Ga)N material system is best suited to produce LEDs and laser diodes from 400 nm down to 210 nm—due to its large and tuneable direct band gap, n- and p-doping capability up to the largest bandgap material AlN and a growth and fabrication technology compatible with the current visible InGaN-based LED production. However AlGaN based UV-emitters still suffer from numerous challenges compared to their visible counterparts that become most obvious by consideration of their light output power, operation voltage and long term stability. Most of these challenges are related to the large bandgap of the materials. However, the development since the first realization of UV electroluminescence in the 1970s shows that an improvement in understanding and technology allows the performance of UV emitters to be pushed far beyond the current state. One example is the very recent realization of edge emitting laser diodes emitting in the UVC at 271.8 nm and in the UVB spectral range at 298 nm. This roadmap summarizes the current state of the art for the most important aspects of UV emitters, their challenges and provides an outlook for future developments

GaN系半導体量子井戸構造の発光機構に関する研究

京都大学0048新制・課程博士博士(工学)甲第8378号工博第1943号新制||工||1174(附属図書館)UT51-2000-F282京都大学大学院工学研究科電子物性工学専攻(主査)教授 藤田 茂夫, 教授 松波 弘之, 教授 松重 和美学位規則第4条第1項該当Doctor of EngineeringKyoto UniversityDA

Surface-plasmon-enhanced light emitters based on InGaN quantum wells

Since 1993, InGaN light-emitting diodes (LEDs) have been improved and commercialized, but these devices have not fulfilled their original promise as solid-state replacements for light bulbs as their light-emission efficiencies have been limited. Here we describe a method to enhance this efficiency through the energy transfer between quantum wells (QWs) and surface plasmons (SPs). SPs can increase the density of states and the spontaneous emission rate in the semiconductor, and lead to the enhancement of light emission by SP–QW coupling. Large enhancements of the internal quantum efficiencies (etaint) were measured when silver or aluminium layers were deposited 10 nm above an InGaN light-emitting layer, whereas no such enhancements were obtained from gold-coated samples. Our results indicate that the use of SPs would lead to a new class of very bright LEDs, and highly efficient solid-state light sources