11 research outputs found
Hydration of a side-chain-free n-type semiconducting ladder polymer driven by electrochemical doping
We study the organic electrochemical transistors (OECTs) performance of the
ladder polymer, poly(benzimidazobenzophenanthroline) (BBL) in an attempt to
better understand how an apparently hydrophobic side-chain-free polymer is able
to operate as an OECT with favorable redox kinetics in an aqueous environment.
We examine two BBLs of different molecular masses from different sources. Both
BBLs show significant film swelling during the initial reduction step. By
combining electrochemical quartz crystal microbalance (eQCM) gravimetry,
in-operando atomic force microscopy (AFM), and both ex-situ and in-operando
grazing incidence wide-angle x-ray scattering (GIWAXS), we provide a detailed
structural picture of the electrochemical charge injection process in BBL in
the absence of any hydrophilic side-chains. Compared with ex-situ measurements,
in-operando GIWAXS shows both more swelling upon electrochemical doping than
has previously been recognized, and less contraction upon dedoping. The data
show that BBL films undergo an irreversible hydration driven by the initial
electrochemical doping cycle with significant water retention and lamellar
expansion that persists across subsequent oxidation/reduction cycles. This
swelling creates a hydrophilic environment that facilitates the subsequent fast
hydrated ion transport in the absence of the hydrophilic side-chains used in
many other polymer systems. Due to its rigid ladder backbone and absence of
hydrophilic side-chains, the primary BBL water uptake does not significantly
degrade the crystalline order, and the original dehydrated, unswelled state can
be recovered after drying. The combination of doping induced hydrophilicity and
robust crystalline order leads to efficient ionic transport and good stability.Comment: 24 pages, 5 figure
Novel Approaches in the Design of Donor-Acceptor Oligomeric and Polymeric Materials for Photovoltaic Applications: D/A Blend versus Self-assembly of D/A by Covalent or Non-Covalent Interaction
n-Type field effect transistors based on rigid rod and liquid crystalline alternating copoly(benzobisoxazole) imides containing perylene and/or naphthalene
The synthesis, characterization, and device studies of poly(benzobisoxazole imide)s containing perylene or naphthalene units in an alternating fashion with the oxazole unit are described. Photoinduced energy transfer and charge separation were studied in methanesulfonic acid (MSA) solution via absorption, excitation, and steady- state fluorescence studies. Excitation of the bisoxazole moiety resulted in enhanced emission from the perylene bisimide unit as a result of FRET (Frster resonance energy transfer). The influence of the imide substitution into the linear chain of poly(benzobisoxazole) (PBO) on its solid- state packing was examined by wide- angle X- ray diffraction (WXRD) analysis. Bottom contact field effect transistors (FET) based on thermally annealed polymer films were fabricated and studied. The polymers showed n-type charge transport and current modulation with an on/off ratio greater than 102. It was observed that the FETs consisting of the random copolymer of bisoxazole containing both perylene as well as naphthalene bisimide units had higher performance parameters such as better mobility (µ e) and Ion/Ioff ratio compared to those of the pristine systems
Naphthalene Diimide Copolymers with Oligo(<i>p</i>‑phenylenevinylene) and Benzobisoxazole for Balanced Ambipolar Charge Transport
A series
of alternating and random donor (D)–acceptor (A)
copolymers based on naphthalene diimide (NDI) as the acceptor and
oligoÂ(<i>p</i>-phenylenevinylene) (OPV) or benzobisoxazole
(BBO) as the strong and weak donor, respectively, were designed and
synthesized by Suzuki coupling and Horner–Wadsworth–Emmons
polymerization. The effect of the varying donor strength of OPV and
BBO on the photophysical, electrochemical, and semiconducting properties
of the polymers was investigated. Absorption and emission spectra
recorded for dilute chloroform solution and thin film showed increased
intramolecular charge transfer for NDI-<i>alt</i>-OPV polymer
compared to NDI-<i>alt</i>-BBO polymer. Cyclic voltammetry
studies along with DFT (density functional theory) studies at the
B3LYP/6-31g* level gave insight into the energy level (HOMO/LUMO)
and molecular orientation of donor and acceptor along the polymer
backbone. NDI-<i>alt</i>-OPV polymer exhibited rigid coplanar
structure with extended π-conjugation which induced backbone
planarity and crystallinity to the polymer. The inherent poor solubility
of the NDI-<i>alt</i>-BBO prevented further device characterization
of this polymer. Random copolymer having maximum 30% incorporation
of BBO comonomer in NDI-<i>r</i>-OPV/BBO was found to be
soluble for further characterization. Compared to NDI-<i>alt</i>-OPV, lowering of both energy levels LUMO (∼0.2 eV) and HOMO
(∼0.5 eV) was observed for both NDI-<i>alt</i>-BBO
and the NDI-<i>r</i>-OPV/BBO. Bottom gate–top contact
organic field effect transistors (OFETs) of NDI-<i>alt</i>-OPV exhibited balanced ambipolar charge transport with average electron
and hole mobility of 3.09 × 10<sup>–3</sup> cm<sup>2</sup> V<sup>–1 </sup>s<sup>–1</sup> and 2.1 ×
10<sup>–3</sup> cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>, respectively, whereas the random copolymer incorporating
both OPV and BBO units NDI-<i>r</i>-OPV/BBO showed dominant
n-type charge transport with moderate 4 × 10<sup>–4</sup> cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup> average
electron mobility. The present work thus highlights the structure–property
relationship and the electronic tunability required in this class
of NDI-based polymers to produce ambipolar transistors
Improved All-Polymer Solar Cell Performance of n-Type Naphthalene Diimide-Bithiophene P(NDI2OD-T2) Copolymer by Incorporation of Perylene Diimide as Coacceptor
Naphthalene diimide-bithiophene P(NDI2OD-T2) is a well-known donor-acceptor polymer, previously explored as n-type material in all-polymer solar cells (all-PSCs) and organic field effect transistor (OFETs) applications. The optical, bulk, electrochemical, and semiconducting properties of P(NDI2OD-T2) polymer were tuned via random incorporation of perylene diimide (PDI) as coacceptor with naphthalene diimide (NDI). Three random copolymers containing 2,2'-bithiophene as donor unit and varying compositions of naphthalene diimide (NDI) and perylene diimide (xPDI, x = 15, 30, and 50 mol % of PDI) as two mixed acceptors were synthesized by Stille coupling copolymerization. Proton NMR spectra recorded in CD Cl-3 showed that the pi-pi stacking induced aggregation among the naphthalene units could be successfully disrupted by the random incorporation of bulky PDI units. The newly synthesized random copolymers were investigated as electron acceptors in BHJ all-PSCs, and their performance was compared with P(NDI2OD-T2) as reference polymer. An enhanced PCE of 5.03% was observed for BHJ all-PSCs (all-polymer solar cells) fabricated using NDI-Th-PDI30 as acceptor and PTB7-Th as donor, while the reference polymer blend with the same donor polymer exhibited PCE of 2.97% efficiency under similar conditions. SCLC bulk carrier mobility measured for blend devices showed improved charge mobility compared to reference polymer, with PTB7-Th:NDI-Th-PDI30 blend device exhibiting the high hole and electron mobility of 4.2 x 10(-4) and 1.5 x 10(-4) cm(2)/(V s), respectively. This work demonstrates the importance of molecular design via random copolymer strategy to control the bulk crystallinity, compatibility, blend morphology, and solar cell performance of n-type copolymers
In Situ Spectroscopic and Electrical Investigations of Ladder-type Conjugated Polymers Doped with Alkali Metals
Ladder-type conjugated polymers exhibit a remarkable performance in (opto)electronic devices. Their double-stranded planar structure promotes an extended pi-conjugation compared to inter-ring-twisted analogues, providing an excellent basis for exploring the effects of charge localization on polaron formation. Here, we investigated alkali-metal n -doping of the ladder-type conjugated polymer (polybenzimidazobenzophe-nanthroline) (BBL) through detailed in situ spectroscopic and electrical characterizations. Photoelectron spectroscopy and ultraviolet-visible-near-infrared (UV-vis-NIR) spectroscopy indicate polaron formation upon potassium (K) doping, which agrees well with theoretical predictions. The semiladder BBB displays a similar evolution in the valence band with the appearance of two new features below the Fermi level upon K-doping. Compared to BBL, distinct differences appear in the UV-vis-NIR spectra due to more localized polaronic states in BBB. The high conductivity (2 S cm(-1)) and low activation energy (44 meV) measured for K-doped BBL suggest disorder-free polaron transport. An even higher conductivity (37 S cm(-1)) is obtained by changing the dopant from K to lithium (Li). We attribute the enhanced conductivity to a decreased perturbation of the polymer nanostructure induced by the smaller Li ions. These results highlight the importance of polymer chain planarity and dopant size for the polaronic state in conjugated polymers.Funding Agencies|Swedish Research Council [2016 - 05498, 2016 - 05990, 2020 - 04538, 2018 - 06048]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkping University [2009 00971]; US National Science Foundation [DMR-2003518]</p
Influence of Molecular Weight on the Organic Electrochemical Transistor Performance of Ladder-Type Conjugated Polymers
Organic electrochemical transistors (OECTs) hold promise for developing a variety of high-performance (bio-)electronic devices/circuits. While OECTs based on p-type semiconductors have achieved tremendous progress in recent years, n-type OECTs still suffer from low performance, hampering the development of power-efficient electronics. Here, it is demonstrated that fine-tuning the molecular weight of the rigid, ladder-type n-type polymer poly(benzimidazobenzophenanthroline) (BBL) by only one order of magnitude (from 4.9 to 51 kDa) enables the development of n-type OECTs with record-high geometry-normalized transconductance (g(m,norm) approximate to 11 S cm(-1)) and electron mobility x volumetric capacitance (mu C* approximate to 26 F cm(-1) V-1 s(-1)), fast temporal response (0.38 ms), and low threshold voltage (0.15 V). This enhancement in OECT performance is ascribed to a more efficient intermolecular charge transport in high-molecular-weight BBL than in the low-molecular-weight counterpart. OECT-based complementary inverters are also demonstrated with record-high voltage gains of up to 100 V V-1 and ultralow power consumption down to 0.32 nW, depending on the supply voltage. These devices are among the best sub-1 V complementary inverters reported to date. These findings demonstrate the importance of molecular weight in optimizing the OECT performance of rigid organic mixed ionic-electronic conductors and open for a new generation of power-efficient organic (bio-)electronic devices.Funding Agencies|Knut and Alice Wallenberg foundationKnut & Alice Wallenberg Foundation; Swedish Research CouncilSwedish Research CouncilEuropean Commission [2016-03979, 2020-03243]; AForsk [18-313, 19-310]; Olle Engkvists Stiftelse [204-0256]; VINNOVAVinnova [2020-05223]; European Commission through the Marie Sklodowska-Curie project HORATES [GA-955837]; FET-OPEN project MITICS [GA-964677]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]; National Research Foundation of KoreaNational Research Foundation of Korea [NRF-2019R1A2C2085290, 2019R1A6A1A11044070]; National Science FoundationNational Science Foundation (NSF) [DMR-2003518]</p
A high-conductivity n-type polymeric ink for printed electronics
Conducting polymers, such as the p-doped poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), have enabled the development of an array of opto- and bio-electronics devices. However, to make these technologies truly pervasive, stable and easily processable, n-doped conducting polymers are also needed. Despite major efforts, no n-type equivalents to the benchmark PEDOT:PSS exist to date. Here, we report on the development of poly(benzimidazobenzophenanthroline):poly(ethyleneimine) (BBL:PEI) as an ethanol-based n-type conductive ink. BBL:PEI thin films yield an n-type electrical conductivity reaching 8Scm(-1), along with excellent thermal, ambient, and solvent stability. This printable n-type mixed ion-electron conductor has several technological implications for realizing high-performance organic electronic devices, as demonstrated for organic thermoelectric generators with record high power output and n-type organic electrochemical transistors with a unique depletion mode of operation. BBL:PEI inks hold promise for the development of next-generation bioelectronics and wearable devices, in particular targeting novel functionality, efficiency, and power performance. The development of n-type conductive polymer inks is critical for the development of next-generation opto-electronic devices that rely on efficient hole and electron transport. Here, the authors report an alcohol-based, high performance and stable n-type conductive ink for printed electronics.Funding Agencies|Knut and Alice Wallenberg foundationKnut & Alice Wallenberg Foundation; Swedish Research CouncilSwedish Research CouncilEuropean Commission [2016-03979, 2020-03243]; AForsk [18-313, 19-310]; Olle Engkvists Stiftelse [204-0256]; VINNOVAVinnova [2020-05223]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]; National Research Foundation of KoreaNational Research Foundation of Korea [NRF2020M3H4A3081814, 2019R1A6A1A11044070]; National Science FoundationNational Science Foundation (NSF) [DMR-2003518]</p
On the Origin of Seebeck Coefficient Inversion in Highly Doped Conducting Polymers
A common way of determining the majority charge carriers of pristine and doped semiconducting polymers is to measure the sign of the Seebeck coefficient. However, a polarity change of the Seebeck coefficient has recently been observed to occur in highly doped polymers. Here, it is shown that the Seebeck coefficient inversion is the result of the density of states filling and opening of a hard Coulomb gap around the Fermi energy at high doping levels. Electrochemical n-doping is used to induce high carrier density (>1 charge/monomer) in the model system poly(benzimidazobenzophenanthroline) (BBL). By combining conductivity and Seebeck coefficient measurements with in situ electron paramagnetic resonance, UV-vis-NIR, Raman spectroelectrochemistry, density functional theory calculations, and kinetic Monte Carlo simulations, the formation of multiply charged species and the opening of a hard Coulomb gap in the density of states, which is responsible for the Seebeck coefficient inversion and drop in electrical conductivity, are uncovered. The findings provide a simple picture that clarifies the roles of energetic disorder and Coulomb interactions in highly doped polymers and have implications for the molecular design of next-generation conjugated polymers
Ground-state electron transfer in all-polymer donor-acceptor heterojunctions
Doping of organic semiconductors is crucial for the operation of organic (opto)electronic and electrochemical devices. Typically, this is achieved by adding heterogeneous dopant molecules to the polymer bulk, often resulting in poor stability and performance due to dopant sublimation or aggregation. In small-molecule donor–acceptor systems, charge transfer can yield high and stable electrical conductivities, an approach not yet explored in all-conjugated polymer systems. Here, we report ground-state electron transfer in all-polymer donor–acceptor heterojunctions. Combining low-ionization-energy polymers with high-electron-affinity counterparts yields conducting interfaces with resistivity values five to six orders of magnitude lower than the separate single-layer polymers. The large decrease in resistivity originates from two parallel quasi-two-dimensional electron and hole distributions reaching a concentration of ∼1013 cm–2. Furthermore, we transfer the concept to three-dimensional bulk heterojunctions, displaying exceptional thermal stability due to the absence of molecular dopants. Our findings hold promise for electro-active composites of potential use in, for example, thermoelectrics and wearable electronics