37 research outputs found

    Effect of intersubband scattering on weak localization in 2D systems

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    The theory of weak localization is generalized for multilevel 2D systems taking into account intersubband scattering. It is shown that weak intersubband scattering which is negligible in a classical transport, affects strongly the weak-localization correction to conductivity. The anomalous magnetoresistance is calculated in the whole range of classically low magnetic fields. This correction to conductivity is shown to depend strongly on the ratios of occupied level concentrations. It is demonstrated that at relatively low population of the excited subband, it is necessary to use the present theory because the high-field limit asimptotics is shown to be achieved only in classical magnetic fields.Comment: 18 pages, 4 figures. Accepted to Phys. Rev. B 6

    Configuration interaction in delta-doped heterostructures

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    We analyze the tunnel coupling between an impurity state located in a δ-layer and the 2D delocalized states in the quantum well (QW) located at a few nanometers from the δ-layer. The problem is formulated in terms of Anderson–Fano model as configuration interaction between the carrier bound state at the impurity and the continuum of delocalized states in the QW. An effect of this interaction on the interband optical transitions in the QW is analyzed. The results are discussed regarding the series of experiments on the GaAs structures with a δ-Mn layer

    Semiclassical kinetic theory of electron spin relaxation in semiconductors

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    We develop a semiclassical kinetic theory for electron spin relaxation in semiconductors. Our approach accounts for elastic as well as inelastic scattering and treats Elliott-Yafet and motional-narrowing processes, such as D'yakonov-Perel' and variable g-factor processes, on an equal footing. Focusing on small spin polarizations and small momentum transfer scattering, we derive, starting from the full quantum kinetic equations, a Fokker-Planck equation for the electron spin polarization. We then construct, using a rigorous multiple time scale approach, a Bloch equation for the macroscopic (k\vec{k}-averaged) spin polarization on the long time scale, where the spin polarization decays. Spin-conserving energy relaxation and diffusion, which occur on a fast time scale, after the initial spin polarization has been injected, are incorporated and shown to give rise to a weight function which defines the energy averages required for the calculation of the spin relaxation tensor in the Bloch equation. Our approach provides an intuitive way to conceptualize the dynamics of the spin polarization in terms of a ``test'' spin polarization which scatters off ``field'' particles (electrons, impurities, phonons). To illustrate our approach, we calculate for a quantum well the spin lifetime at temperatures and densities where electron-electron and electron-impurity scattering dominate. The spin lifetimes are non-monotonic functions of temperature and density. Our results show that at electron densities and temperatures, where the cross-over from the non-degenerate to the degenerate regime occurs, spin lifetimes are particularly long.Comment: 29 pages, 10 figures, final versio

    Spin dynamics in high-mobility two-dimensional electron systems

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    Understanding the spin dynamics in semiconductor heterostructures is highly important for future semiconductor spintronic devices. In high-mobility two-dimensional electron systems (2DES), the spin lifetime strongly depends on the initial degree of spin polarization due to the electron-electron interaction. The Hartree-Fock (HF) term of the Coulomb interaction acts like an effective out-of-plane magnetic field and thus reduces the spin-flip rate. By time-resolved Faraday rotation (TRFR) techniques, we demonstrate that the spin lifetime is increased by an order of magnitude as the initial spin polarization degree is raised from the low-polarization limit to several percent. We perform control experiments to decouple the excitation density in the sample from the spin polarization degree and investigate the interplay of the internal HF field and an external perpendicular magnetic field. The lifetime of spins oriented in the plane of a [001]-grown 2DES is strongly anisotropic if the Rashba and Dresselhaus spin-orbit fields are of the same order of magnitude. This anisotropy, which stems from the interference of the Rashba and the Dresselhaus spin-orbit fields, is highly density-dependent: as the electron density is increased, the kubic Dresselhaus term becomes dominant and reduces the anisotropy.Comment: 13 pages, 6 figure

    Weak localization of Dirac fermions in graphene beyond the diffusion regime

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    We develop a microscopic theory of the weak localization of two-dimensional massless Dirac fermions which is valid in the whole range of classically weak magnetic fields. The theory is applied to calculate magnetoresistance caused by the weak localization in graphene and conducting surfaces of bulk topological insulators.Comment: 5 pages, 2 figure

    Effect of bulk inversion asymmetry on the Datta-Das transistor

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    A model of the Datta-Das spin field-effect transistor is presented which, in addition to the Rashba interaction, takes into account the influence of bulk inversion asymmetry of zinc-blende semiconductors. In the presence of bulk inversion asymmetry, the conductance is found to depend significantly on the crystallographic orientation of the channel. We determine the channel direction optimal for the observation of the Datta-Das effect in GaAs and InAs-based devices.Comment: 4 pages, Revtex4, 4 EPS figure

    Anisotropic transport in the two-dimensional electron gas in the presence of spin-orbit coupling

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    In a two-dimensional electron gas as realized by a semiconductor quantum well, the presence of spin-orbit coupling of both the Rashba and Dresselhaus type leads to anisotropic dispersion relations and Fermi contours. We study the effect of this anisotropy on the electrical conductivity in the presence of fixed impurity scatterers. The conductivity also shows in general an anisotropy which can be tuned by varying the Rashba coefficient. This effect provides a method of detecting and investigating spin-orbit coupling by measuring spin-unpolarized electrical currents in the diffusive regime. Our approach is based on an exact solution of the two-dimensional Boltzmann equation and provides also a natural framework for investigating other transport effects including the anomalous Hall effect.Comment: 10 pages, 1 figure included. Discussion of experimental impact enlarged; error in calculation of conductivity contribution corrected (cf. Eq. (A14)), no changes in qualitative results and physical consequence

    Anisotropic exchange interaction of localized conduction-band electrons in semiconductor structures

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    The spin-orbit interaction in semiconductors is shown to result in an anisotropic contribution into the exchange Hamiltonian of a pair of localized conduction-band electrons. The anisotropic exchange interaction exists in semiconductor structures which are not symmetric with respect to spatial inversion, for instance in bulk zinc-blend semiconductors. The interaction has both symmetric and antisymmetric parts with respect to permutation of spin components. The antisymmetric (Dzyaloshinskii-Moriya) interaction is the strongest one. It contributes significantly into spin relaxation of localized electrons; in particular, it governs low-temperature spin relaxation in n-GaAs with the donor concentration near 10^16cm-3. The interaction must be allowed for in designing spintronic devices, especially spin-based quantum computers, where it may be a major source of decoherence and errors

    Magnetotransport in Two-Dimensional Electron Systems with Spin-Orbit Interaction

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    We present magnetotransport calculations for homogeneous two-dimensional electron systems including the Rashba spin-orbit interaction, which mixes the spin-eigenstates and leads to a modified fan-chart with crossing Landau levels. The quantum mechanical Kubo formula is evaluated by taking into account spin-conserving scatterers in an extension of the self-consistent Born approximation that considers the spin degree of freedom. The calculated conductivity exhibits besides the well-known beating in the Shubnikov-de Haas (SdH) oscillations a modulation which is due to a suppression of scattering away from the crossing points of Landau levels and does not show up in the density of states. This modulation, surviving even at elevated temperatures when the SdH oscillations are damped out, could serve to identify spin-orbit coupling in magnetotransport experiments. Our magnetotransport calculations are extended also to lateral superlattices and predictions are made with respect to 1/B periodic oscillations in dependence on carrier density and strength of the spin-orbit coupling.Comment: 8 pages including 8 figures; submitted to PR

    Anisotropic splitting of intersubband spin plasmons in quantum wells with bulk and structural inversion asymmetry

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    In semiconductor heterostructures, bulk and structural inversion asymmetry and spin-orbit coupling induce a k-dependent spin splitting of valence and conduction subbands, which can be viewed as being caused by momentum-dependent crystal magnetic fields. This paper studies the influence of these effective magnetic fields on the intersubband spin dynamics in an asymmetric n-type GaAs/AlGaAs quantum well. We calculate the dispersions of intersubband spin plasmons using linear response theory. The so-called D'yakonov-Perel' decoherence mechanism is inactive for collective intersubband excitations, i.e., crystal magnetic fields do not lead to decoherence of spin plasmons. Instead, we predict that the main signature of bulk and structural inversion asymmetry in intersubband spin dynamics is a three-fold, anisotropic splitting of the spin plasmon dispersion. The importance of many-body effects is pointed out, and conditions for experimental observation with inelastic light scattering are discussed.Comment: 8 pages, 6 figure
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