28 research outputs found

    Ultrafast laser micro-nano structuring of transparent materials with high aspect ratio

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    Ultrafast lasers are ideal tools to process transparent materials because they spatially confine the deposition of laser energy within the material's bulk via nonlinear photoionization processes. Nonlinear propagation and filamentation were initially regarded as deleterious effects. But in the last decade, they turned out to be benefits to control energy deposition over long distances. These effects create very high aspect ratio structures which have found a number of important applications, particularly for glass separation with non-ablative techniques. This chapter reviews the developments of in-volume ultrafast laser processing of transparent materials. We discuss the basic physics of the processes, characterization means, filamentation of Gaussian and Bessel beams and provide an overview of present applications

    Halogenated building blocks for 2D crystal engineering on solid surfaces: lessons from hydrogen bonding

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    Halogen bonding has emerged as a promising tool in two-dimensional (2D) crystal engineering. Since halogen bonds are similar to hydrogen bonds in a number of aspects, the existing knowledge of hydrogen bonded systems can be applied to halogenated systems. Here we evaluate the applicability of a retrosynthetic approach based on topological similarity between hydrogen and halogen bonds to obtain predictable halogen bonded networks. The self-assembly of 1,3-dibromo-5-alkoxybenzene derivatives was studied in analogy with well-explored alkoxy isophthalic acids using a combination of experimental and theoretical tools. Scanning tunneling microscopy (STM) characterization of the networks formed at the liquid-graphite interface revealed that while the retrosynthetic approach works at the level of small clusters of molecules within the 2D network, the overall structure of the network deviates from the anticipated structure. The monolayers consist of fractured rows of halogen-bonded modules instead of the expected continuous lamellar structure. Each module consists of a discrete number of halogen-bonded molecules. The interactions responsible for the stabilization of halogen bonded dimers are delineated through detailed density functional theory (DFT) calculations coupled with natural bonding orbitals (NBO) and perturbation analysis. A modified force field that includes an extra charged site to imitate the σ hole on the halogen atom was developed and applied to extract total potential energies of the anticipated and observed networks. Plausible reasons for the deviation from the anticipated structure are discussed. Finally, a modified molecular design that allows successful application of the hydrogen bond-halogen bond analogy was tested experimentally.status: publishe

    Numerical studies of dielectric material modifications by a femtosecond Bessel–Gauss laser beam

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    Femtosecond Bessel-Gauss beams are attractive tools to a large area of laser processes including high aspect ratio volume nanostructuration in dielectric materials. Understanding the dielectric material response to femtosecond Bessel-Gauss beam irradiation is key in controlling its modifications and designing new structures. In this work, we show how the material ionization affects the propagation of the femtosecond Bessel-Gauss laser beam and can limit the laser energy deposition. By performing 2D/3D numerical simulations, we evaluate the absorbed laser energy and subsequent material modifications. First, we model the electron dynamics in the material coupled to the 3D laser propagation effects. Then, we consider 2D thermoelasto-plastic simulations to characterize the medium modifications. Results show that the laser ionized matter induces a screening of the incident gaussian beams which form the Bessel-Gauss beam. This effect leads to a limitation of the maximum laser energy deposition even if the incident laser energy increases. It can be reduced if a tigthly focused femtosecond Bessel-Gauss beam is used as the angular aperture of the cone along which the incident gaussian beams are distributed is larger

    UBQLN4 Represses Homologous Recombination and Is Overexpressed in Aggressive Tumors

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    Genomic instability can be a hallmark of both human genetic disease and cancer. We identify a deleterious UBQLN4 mutation in families with an autosomal recessive syndrome reminiscent of genome instability disorders. UBQLN4 deficiency leads to increased sensitivity to genotoxic stress and delayed DNA double-strand break (DSB) repair. The proteasomal shuttle factor UBQLN4 is phosphorylated by ATM and interacts with ubiquitylated MRE11 to mediate early steps of homologous recombination-mediated DSB repair (HRR). Loss of UBQLN4 leads to chromatin retention of MRE11, promoting non-physiological HRR activity in vitro and in vivo. Conversely, UBQLN4 overexpression represses HRR and favors non-homologous end joining. Moreover, we find UBQLN4 overexpressed in aggressive tumors. In line with an HRR defect in these tumors, UBQLN4 overexpression is associated with PARP1 inhibitor sensitivity. UBQLN4 therefore curtails HRR activity through removal of MRE11 from damaged chromatin and thus offers a therapeutic window for PARP1 inhibitor treatment in UBQLN4-overexpressing tumors
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