going beyond BASDAI

This work was supported by a Research Grant from the InvestigatorInitiated Studies program of Merck Sharp & Dohme (Grant No. 56078). The sponsor did not interfere with the study question, analysis or interpretation of results. AS is supported by a doctoral grant from Fundação para a Ciência e Tecnologia (Foundation for Science and Technology) (SFRH/BD/108246/2015).OBJECTIVES: To compare definitions of high disease activity of the Ankylosing Spondylitis Disease Activity Score (ASDAS) and Bath Ankylosing Spondylitis Disease Activity Index (BASDAI) in selecting patients for treatment with biologic disease-modifying antirheumatic drugs (bDMARDs). METHODS: Patients from Rheumatic Diseases Portuguese Register (Reuma.pt) with a clinical diagnosis of axial spondyloarthritis (axSpA) were included. Four subgroups (cross-tabulation between ASDAS (≥2.1) and BASDAI (≥4) definitions of high disease activity) were compared regarding baseline characteristics and response to bDMARDs at 3 and 6 months estimated in multivariable regression models. RESULTS: Of the 594 patients included, the majority (82%) had both BASDAI≥4 and ASDAS ≥2.1. The frequency of ASDAS ≥2.1, if BASDAI<4 was much larger than the opposite (ie, ASDAS <2.1, if BASDAI≥4): 62% vs 0.8%. Compared to patients fulfilling both definitions, those with ASDAS ≥2.1 only were more likely to be male (77% vs 51%), human leucocyte antigen B27 positive (79% vs 65%) and have a higher C reactive protein (2.9 (SD 3.5) vs 2.1 (2.9)). Among bDMARD-treated patients (n=359), responses across subgroups were globally overlapping, except for the most 'stringent' outcomes. Patients captured only by ASDAS responded better compared to patients fulfilling both definitions (eg, ASDAS inactive disease at 3 months: 61% vs 25% and at 6 months: 42% vs 25%). CONCLUSION: The ASDAS definition of high disease activity is more inclusive than the BASDAI definition in selecting patients with axSpA for bDMARD treatment. The additionally 'captured' patients respond better and have higher likelihood of predictors thereof. These results support using ASDAS≥2.1 as a criterion for treatment decisions.publishersversionpublishe

Comparison of diamond growth with different gas mixtures in microwave plasma asssited chemical vapor deposition (MWCVD)

In this work we study the influence of oxygen addition to several halocarbon-hydrogen gas systems. Diamond growth have been performed in a high power density MWCVD reactor built in our laboratory. The growth experiments are monitored by argon actinometry as a reference to plasma temperature and atomic hydrogen production, and by mass spectrometry to compare the exhaust gas composition. Atomic hydrogen actinometry revealed that the halogen presence in the gas phase is responsible for a considerable increase of atomic hydrogen concentration in the gas phase. Mass spectrometry shows similar results for all gas mixtures tested. Growth studies with oxygen addition to CF4/H2, CCl4/H2, CCl2F2/H2 and CH3Cl/H2 reveals that oxygen increases the carbon solubility in the gas phase but no better diamond growth conditions were found. Halogens are not, per se, eligible for diamond growth. All the possible advantages, as the higher production of atomic hydrogen, have been suppressed by the low carbon solubility in the gas phase, even when oxygen is added. The diamond growth with small amount of CF4 added to CH4/H2 mixture is not aggressive to the apparatus but brings several advantages to the process

Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica

<abstract language="eng">Boron-doped polycrystalline diamond films have been deposited over silicon substrate by hot-filament chemical-vapor-deposition process. A gas mixture of 0,5 vol. % methane and 1 vol. % methanol on hydrogen at a pressure of 50 Torr, have been used. Boric oxide dissolved in methanol have been used as the boron doping source during the diamond growth process. Raman spectroscopy and Scanning Electron Microscopy (SEM) have been performed on the samples. A change of Raman spectra with film doping was observed. The diamond characteristic line at 1333 cm-1 down shifted and its intensity decreased as the film resistivity decreased. On the other hand, a broad peak around 1220 cm-1 appeared and its intensity increased with decreasing film resistivity. No modifications on films morphology have been observed with different boron doping level. The grains were well-faceted with 2 <FONT FACE="Symbol">m</font>m average siz

Raman analyses of residual stress in diamond thin films grown on Ti6Al4V alloy

The stress evolution in diamond films grown on Ti6Al4V was investigated in order to develop a comprehensive view of the residual stress formation. Residual stress is composed of intrinsic stress induced during diamond film growth and extrinsic stress caused by the different thermal expansion coefficients between the film and substrate. In the coalescence stage it has been observed that the residual stress is dominated by the microstructure, whereas on continuous films, the thermal stress is more important. In this work diamond thin films with small grain size and good size and good quality were obtained in a surface wave-guide microwave discharge, the Surfatron system, with a negative bias voltage applied between the plasma shell and substrate. For above of -100V applied bias, the ratio of carbon sp³/sp² bond may increase and the nucleation rate increase arising the high value at the -250V applied bias. Stress measurements and sp³ content in the film were studied by Raman scattering spectroscopy. The total residual stress is compressive and varied from -1.52 to -1.48 GPa between 0 and -200 V applied bias, respectively, and above the -200 V, the compressive residual stress increased drastically to -1.80 GPa. The diamond nucleation density was evaluated by top view SEM images