Les limites de la liberté religieuse du détenu

La liberté religieuse, comme toute autre liberté fondamentale, bénéficie au détenu, dans la limite des contingences inhérentes à la détention. La protection de la liberté religieuse souffre d’abord de sa confrontation avec les impératifs liés à la sécurité et au bon ordre de l’établissement. D’autre part, dans le contexte particulier de la privation de liberté, seule la reconnaissance d’une obligation positive mise à la charge de l’État pour organiser le culte en détention est de nature à ne pas trop réduire la liberté religieuse du détenu. La protection de la liberté religieuse pourrait alors souffrir de sa confrontation avec les impératifs de neutralité du service public et de laïcité. L’obligation positive naît en jurisprudence, même si son intensité est contrastée, selon les pans de la liberté religieuse concernés.The right to freedom of religion, as all over fundamental rights, benefits the prisoner, in the limit of inherent contingencies in custody. The protection of freedom of religion suffers first from its confrontation with the requirements due to security and the good order of the establishment. On the other hand, in the specific context of deprivation of liberty, only the recognition of a positive obligation in the responsibility of the state to organise the religious worship in prison is likely to not reduce the prisoner’s religious freedom too much. The protection of freedom of religion could suffer from its confrontation with the imperatives of neutrality of the public service and secularism. The positive obligation emerges from case law, even if its intensity is contrasted, depending on the sector of religious freedom concerned

Etude Comparee de l\u27Enseignement des Langues Vivantes Etrangeres en France et en Australie : Le cas de l\u27Anglais en France et du Francais en Australie Occidentale au Lycee

The purpose of this thesis is to analyse French and Australian approaches to foreign language learning and teaching within their education systems through a comparison of English programmes for French high schools and French programmes for Western Australian high schools. The value and originality of this project lies in the absence of any previous study between the two countries in this field of research. It will be of interest to anyone involved in foreign language learning and teaching. This research is mainly based on official texts and publications (also available online) as well as on work by specialists in education and linguistics. The first part concentrates on the place of foreign languages in French and Australian school courses. The second part compares the programmes for English in French high schools with the programmes for French in Western Australian high schools. The final part examines the French “\u27baccalaureat” for English and its equivalent in Western Australia for French. This research takes into account the influence of a country\u27s historic, social and cultural context on its education system and the repercussions of its teaching methods on the structure of its programmes

High precision pressure sensors based on SAW devices in the GHz range

In this paper, an AlN/free-standing nanocrystalline diamond (NCD) system is proposed in order to process high frequency surface acoustic wave (SAW) resonators for sensing applications. The main problem of synthetic diamond is its high surface roughness that worsens the sputtered AlN quality and hence the device response. In order to study the feasibility of this structure, AlN films from 150 nm up to 1200 nm thick have been deposited on free-standing NCD. We have then analysed the influence of the AlN layer thickness on its crystal quality and device response. Optimized thin films of 300 nm have been used to fabricate of one-port SAW resonators operating in the 10–14 GHz frequency range. A SAW based sensor pressure with a sensibility of 0.33 MHz/bar has been fabricated

Electrically active defects in boron doped diamond homoepitaxial layers studied from deep level transient spectroscopies and other techniques

International audienceHomoepitaxial thin films of boron doped diamond are investigated with the help of Fourier transform deep level transient spectroscopy (FT-DLTS) and high resolution isothermal transient spectroscopy (HR-ITS) in order to determine the properties of hole traps. Conductivity studies and other characterisation techniques of defects are also used to bring complementary information. The main conclusions are as follows: (i) many hole traps can be found with activation energies in the range 0.9-1.6 eV; (ii) most of them showinwards decreasing concentrations, which passes below 10^15/cm3 at a depth close to a few hundred nanometers from the surface; (iii) some of them are metastable, in the sense the emission rate distribution undergoes changes after thermal treatments performed at temperatures well belowthose used for growth and previous annealing. These two last facts suggest that hydrogen atoms may be involved in charged defects. In other samples, an irreversible decrease of the conductivity correlated with the increase of the cathodoluminescence (CL)Aband demonstrates that a deep donor is connected with dislocations and acts as a very efficient compensating centre in the first 400 nm just below the surface but with a decreasing concentration deeper inside the homoepitaxial layer. The physical origin of these deep levels is discussed and believed to be likely connected with hydrogen atoms

Low temperature growth of nanocrystalline diamond: Insight thermal property

One of the limitations of materials for high-power devices and structural coatings applications is heat dissipation. Diamond is a suitable material for heat distribution due to its high thermal conductivity. Nevertheless, it is usually grown at high temperature (800–1200 ◦C), which limits its use as a coating for substrates vulnerable to degradation at high temperatures. In this work, it is studied the effect of the distance between the plasma source and substrate on the growth of nanocrystalline diamond layers on silicon substrates at low temperature (<450 ◦C) by microwave linear antenna plasma enhanced chemical vapour deposition (MW-LA-PECVD) in pulse mode. The nanocrystalline diamond films have been analysed by scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy. Finally, the superficial thermal conductivity of the diamond layers was determined by scanning thermal microscopy-AFM (SThM-AFM).6 página

Berkovich Nanoindentation on AlN Thin Films

Berkovich nanoindentation-induced mechanical deformation mechanisms of AlN thin films have been investigated by using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) techniques. AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD) derived Si-doped (2 × 1017 cm−3) GaN template by using the helicon sputtering system. The XTEM samples were prepared by means of focused ion beam (FIB) milling to accurately position the cross-section of the nanoindented area. The hardness and Young’s modulus of AlN thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option. The obtained values of the hardness and Young’s modulus are 22 and 332 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple “pop-ins” observed in the load–displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of load–displacement curve suggests that no pressure-induced phase transition was involved. Results obtained in this study may also have technological implications for estimating possible mechanical damages induced by the fabrication processes of making the AlN-based devices

Edward Kennard Rand. Johannes Scottus

Mortet Victor. Edward Kennard Rand. Johannes Scottus . In: Bibliothèque de l'école des chartes. 1908, tome 69. pp. 423-427